Abstract: A thin film transistor includes a substrate, a gate, a gate insulating layer, a semiconductor layer, a first conductive layer, a covering layer and a sidewall protection layer. The gate is disposed on the substrate, the gate insulating layer is disposed on the gate, and the semiconductor layer is disposed on the gate insulating layer. The first conductive layer is disposed on the semiconductor layer, and the first conductive layer includes copper. The covering layer is disposed on an upper surface of the first conductive layer, and the covering layer includes copper nitride. The sidewall protection layer is disposed on a side surface of the first conductive layer, and the sidewall protection layer includes copper nitride.

Abstract: A pickup and contact device is adapted to be connected to a moving device to move a picked-up electronic element to an electrical testing zone. The moving device pressurizes the electronic element through the pickup and contact device, so that a contact point of the electronic element stably contacts a contact pad of the electrical testing zone. The pickup and contact device includes a main body including a base and a contact portion and a plurality of heat dissipation fins disposed at two opposite sides of the base. The contact portion is adapted to pick up the electronic element and to move the electronic element to the electrical testing zone along with the moving device. When the electronic element is tested in the electrical testing zone, heat emitted from the electronic element is adapted to be transmitted out through the heat dissipation fins of the main body.