Patents by Inventor YU-KAI LU

YU-KAI LU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF PREPARING SEMICONDUCTOR STRUCTURE HAVING LOW DIELECTRIC CONSTANT LAYER
    Publication number: 20250031361
    Abstract: The present application provides a method of preparing a semiconductor structure. The method includes providing a conductive film; disposing a barrier layer over the conductive film; disposing a first dielectric layer over the barrier layer; disposing a patterned hard mask over the first dielectric layer; and removing a portion of the first dielectric layer exposed through the patterned hard mask, wherein the removal of the portion of the first dielectric layer includes providing a nitrogen plasma to collide with the portion of the first dielectric layer.
    Type: Application
    Filed: October 9, 2024
    Publication date: January 23, 2025
    Inventor: YU-KAI LU
  • Method of preparing semiconductor structure having low dielectric constant layer
    Patent number: 12205825
    Abstract: The present application provides a method of preparing a semiconductor structure. The method includes providing a conductive film; disposing a barrier layer over the conductive film; disposing a first dielectric layer over the barrier layer; disposing a patterned hard mask over the first dielectric layer; and removing a portion of the first dielectric layer exposed through the patterned hard mask, wherein the removal of the portion of the first dielectric layer includes providing a nitrogen plasma to collide with the portion of the first dielectric layer.
    Type: Grant
    Filed: March 29, 2022
    Date of Patent: January 21, 2025
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventor: Yu-Kai Lu
  • METHOD OF PREPARING SEMICONDUCTOR STRUCTURE HAVING LOW DIELECTRIC CONSTANT LAYER
    Publication number: 20230317467
    Abstract: The present application provides a method of preparing a semiconductor structure. The method includes providing a conductive film; disposing a barrier layer over the conductive film; disposing a first dielectric layer over the barrier layer; disposing a patterned hard mask over the first dielectric layer; and removing a portion of the first dielectric layer exposed through the patterned hard mask, wherein the removal of the portion of the first dielectric layer includes providing a nitrogen plasma to collide with the portion of the first dielectric layer.
    Type: Application
    Filed: March 29, 2022
    Publication date: October 5, 2023
    Inventor: YU-KAI LU
  • METHOD OF PREPARING SEMICONDUCTOR STRUCTURE HAVING LOW DIELECTRIC CONSTANT LAYER
    Publication number: 20230320059
    Abstract: The present application provides a method of preparing a semiconductor structure. The method includes providing a conductive film; disposing a barrier layer over the conductive film; disposing a first dielectric layer over the barrier layer; disposing a patterned hard mask over the first dielectric layer; and removing a portion of the first dielectric layer exposed through the patterned hard mask, wherein the removal of the portion of the first dielectric layer includes providing a nitrogen plasma to collide with the portion of the first dielectric layer.
    Type: Application
    Filed: March 29, 2022
    Publication date: October 5, 2023
    Inventor: Yu-Kai LU