Abstract: DNA damage (e.g., cytosine deamination) can appear more frequently in hypermethylated partitions of DNA (e.g., cell-free DNA) samples, than in hypomethylated partitions. Embodiments include sequencing hypermethylated partitions and hypomethylated partitions wherein calling a C to T or G to A transition mutation relative to a reference sequence based on sequences of molecules from the hypermethylated partition requires observation of the transition mutation in a greater number of molecules than calling a C to T or G to A transition mutation relative to the reference sequence based on sequences of molecules from the hypomethylated partition, or C to T or G to A transition mutations are not called relative to a reference sequence based on sequences of molecules of the hypermethylated partition.

Abstract: A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.

Abstract: A high electron mobility GaN-based transistor structure comprises a substrate, an epitaxial GaN layer formed on the substrate, at least one ohmic contact layer formed on the epitaxial GaN layer, a metallic gate layer formed on the epitaxial GaN layer, and a diffusion barrier layer interposed between the metallic gate layer and the epitaxial GaN layer. The diffusion barrier layer hinders metallic atoms of the metallic gate layer from diffusing into the epitaxial GaN layer, whereby are improved the electric characteristics and reliability of the GaN-based transistor.

Abstract: A hidden burglar alarm device for a door or window includes a casing, an alarm mechanism mounted in the casing, a separator detachably inserted into the casing, a magnetic set detachably connecting the separator to the casing, a connector connected with the separator, a ballast fixed on the connector and a flexible wire connected with the ballast. The alarm mechanism includes an alarm member and a trigger connected with the alarm member. The separator selectively abuts against the trigger. The magnetic set includes a metallic object fixed on the separator and a magnet portion fixed on the casing for magnetically attracting the metallic object. The connector has two ends respectively fixed on the separator and the ballast. The flexible wire has two ends respectively fixed on the ballast and a door or window.

Abstract: A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.

Abstract: An electronic device having a function of wireless transmission includes a wireless transceiving module, an accessing module and a shielding element that are disposed over a main board. The wireless transceiving module is used for transmitting a wireless signal. The accessing module is used for accessing an IC card having a radio frequency identification module. The shielding element is disposed between the wireless transceiving module and the accessing module and is electrically connected to a ground element of the main board. The shielding element is used for receiving the wireless signal to shield the radio frequency identification module.

Abstract: A system having a common operations and reset environment and method for using the same are described. In one embodiment, the system comprises one or more hardware resources, client programs stored in memory, and an operations and reset environment shared by the clients. The operations and reset environment implement hardware specific functions to make available the one or more hardware resources to the clients using a common programming interface.