Patents by Inventor Yu-Kong CHEN

Yu-Kong CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 8735904
    Abstract: A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.
    Type: Grant
    Filed: February 8, 2012
    Date of Patent: May 27, 2014
    Assignee: National Chiao Tung University
    Inventors: Yi Chang, Chia-Hua Chang, Yueh-Chin Lin, Yu-Kong Chen, Ting-En Shie
  • HIGH ELECTRON MOBILITY GaN-BASED TRANSISTOR STRUCTURE
    Publication number: 20130175537
    Abstract: A high electron mobility GaN-based transistor structure comprises a substrate, an epitaxial GaN layer formed on the substrate, at least one ohmic contact layer formed on the epitaxial GaN layer, a metallic gate layer formed on the epitaxial GaN layer, and a diffusion barrier layer interposed between the metallic gate layer and the epitaxial GaN layer. The diffusion barrier layer hinders metallic atoms of the metallic gate layer from diffusing into the epitaxial GaN layer, whereby are improved the electric characteristics and reliability of the GaN-based transistor.
    Type: Application
    Filed: April 25, 2012
    Publication date: July 11, 2013
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: EDWARD YI CHANG, CHIA-HUA CHANG, YUEH-CHIN LIN, YU KONG CHEN, SHIH-CHIEN LIU
  • Semiconductor Device
    Publication number: 20120313107
    Abstract: A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.
    Type: Application
    Filed: February 8, 2012
    Publication date: December 13, 2012
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Yi CHANG, Chia-Hua CHANG, Yueh-Chin LIN, Yu-Kong CHEN, Ting-En SHIE