Patents by Inventor Yu-Ku Lin
Yu-Ku Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11955547Abstract: An integrated circuit device includes a gate stack disposed over a substrate. A first L-shaped spacer is disposed along a first sidewall of the gate stack and a second L-shaped spacer is disposed along a second sidewall of the gate stack. The first L-shaped spacer and the second L-shaped spacer include silicon and carbon. A first source/drain epitaxy region and a second source/drain epitaxy region are disposed over the substrate. The gate stack is disposed between the first source/drain epitaxy region and the second source/drain epitaxy region. An interlevel dielectric (ILD) layer disposed over the substrate. The ILD layer is disposed between the first source/drain epitaxy region and a portion of the first L-shaped spacer disposed along the first sidewall of the gate stack and between the second source/drain epitaxy region and a portion of the second L-shaped spacer disposed along the second sidewall of the gate stack.Type: GrantFiled: December 20, 2018Date of Patent: April 9, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Te-Jen Pan, Yu-Hsien Lin, Hsiang-Ku Shen, Wei-Han Fan, Yun Jing Lin, Yimin Huang, Tzu-Chung Wang
-
Publication number: 20230108974Abstract: An image sensor device includes a semiconductor device, a plurality of photo sensitive regions, a dielectric layer, a grid structure, and a plurality of convex dielectric lenses. The photo sensitive regions are in the semiconductor substrate. The dielectric layer is over a backside surface of the semiconductor substrate. The grid structure is over a backside surface of the dielectric layer. The grid structure includes a plurality of grid lines. Each of the grid lines comprises a lower portion and an upper portion forming an interface with the lower portion. The convex dielectric lenses are alternately arranged with the grid lines over the backside surface of the dielectric layer. Apexes of the plurality of convex dielectric lenses are higher than an interface between the upper portion and the lower portion of each of the grid lines.Type: ApplicationFiled: December 5, 2022Publication date: April 6, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shiu-Ko JANGJIAN, Chih-Nan WU, Chun-Che LIN, Yu-Ku LIN
-
Patent number: 11522001Abstract: An image sensor device includes a semiconductor device, a plurality of photo sensitive regions, a dielectric layer, a grid structure, and a plurality of convex dielectric lenses. The plurality of photo sensitive regions are in the semiconductor substrate. The dielectric layer is on a backside surface of the semiconductor substrate facing away from the plurality of photo sensitive regions. The grid structure is on a backside surface of the dielectric layer facing away from the semiconductor substrate. The grid structure includes a plurality of grid lines spaced from each other. The plurality of convex dielectric lenses are alternately arranged with the plurality of grid lines of the grid structure on the backside surface of the dielectric layer. Apexes of the plurality of convex dielectric lenses are lower than top ends of the plurality of grid lines of the grid structure.Type: GrantFiled: October 23, 2020Date of Patent: December 6, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shiu-Ko Jangjian, Chih-Nan Wu, Chun-Che Lin, Yu-Ku Lin
-
Publication number: 20210043670Abstract: An image sensor device includes a semiconductor device, a plurality of photo sensitive regions, a dielectric layer, a grid structure, and a plurality of convex dielectric lenses. The plurality of photo sensitive regions are in the semiconductor substrate. The dielectric layer is on a backside surface of the semiconductor substrate facing away from the plurality of photo sensitive regions. The grid structure is on a backside surface of the dielectric layer facing away from the semiconductor substrate. The grid structure includes a plurality of grid lines spaced from each other. The plurality of convex dielectric lenses are alternately arranged with the plurality of grid lines of the grid structure on the backside surface of the dielectric layer. Apexes of the plurality of convex dielectric lenses are lower than top ends of the plurality of grid lines of the grid structure.Type: ApplicationFiled: October 23, 2020Publication date: February 11, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shiu-Ko JANGJIAN, Chih-Nan WU, Chun-Che LIN, Yu-Ku LIN
-
Patent number: 10867889Abstract: A method of manufacturing a semiconductor structure includes receiving a substrate including a first side and a second side opposite to the first side; forming a recess extending between the first side and the second side; and disposing a conductive material in the recess to form a conductive via, wherein the conductive via includes an interface, a first portion adjacent to the first side and a second portion adjacent to the second side, the interface is disposed between the first portion and the second portion, an average grain size of the first portion is substantially different from an average grain size of the second portion.Type: GrantFiled: September 6, 2018Date of Patent: December 15, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Li-Yen Fang, Chih-Chang Huang, Jung-Chih Tsao, Yao-Hsiang Liang, Yu-Ku Lin
-
Patent number: 10818716Abstract: An image sensor device includes a substrate, a pixel circuit, a dielectric structure, a photo sensitive element, a grid, and a convex dielectric lens. The substrate has a first side and a second side opposite to the first side. The pixel circuit is disposed on the first side of the substrate. The dielectric structure is disposed on the second side of the substrate. The photo sensitive element is disposed between the pixel circuit and the dielectric structure. The grid is disposed on the dielectric structure. The convex dielectric lens is disposed on the dielectric structure. The convex dielectric lens has a convex side. A topmost of the convex side is above an interface between the dielectric structure and the grid.Type: GrantFiled: July 29, 2019Date of Patent: October 27, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shiu-Ko Jangjian, Chih-Nan Wu, Chun-Che Lin, Yu-Ku Lin
-
Publication number: 20190348458Abstract: An image sensor device includes a substrate, a pixel circuit, a dielectric structure, a photo sensitive element, a grid, and a convex dielectric lens. The substrate has a first side and a second side opposite to the first side. The pixel circuit is disposed on the first side of the substrate. The dielectric structure is disposed on the second side of the substrate. The photo sensitive element is disposed between the pixel circuit and the dielectric structure. The grid is disposed on the dielectric structure. The convex dielectric lens is disposed on the dielectric structure. The convex dielectric lens has a convex side. A topmost of the convex side is above an interface between the dielectric structure and the grid.Type: ApplicationFiled: July 29, 2019Publication date: November 14, 2019Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shiu-Ko JANGJIAN, Chih-Nan WU, Chun-Che LIN, Yu-Ku LIN
-
Patent number: 10367021Abstract: An image sensor device includes a substrate, a photo sensitive element, a first dielectric structure and a convex dielectric lens. The substrate has a first side and a second side opposite to the first side. The photo sensitive element is formed on the first side of the substrate for receiving incident light transmitted through the substrate. The first dielectric structure is formed on the second side of the substrate. At least one portion of the convex dielectric lens is located in the first dielectric structure. The convex dielectric lens has a convex side oriented toward the incident light and a planar side oriented toward the photo sensitive element.Type: GrantFiled: December 17, 2013Date of Patent: July 30, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shiu-Ko Jangjian, Chih-Nan Wu, Chun-Che Lin, Yu-Ku Lin
-
Publication number: 20190019743Abstract: A method of manufacturing a semiconductor structure includes receiving a substrate including a first side and a second side opposite to the first side; forming a recess extending between the first side and the second side; and disposing a conductive material in the recess to form a conductive via, wherein the conductive via includes an interface, a first portion adjacent to the first side and a second portion adjacent to the second side, the interface is disposed between the first portion and the second portion, an average grain size of the first portion is substantially different from an average grain size of the second portion.Type: ApplicationFiled: September 6, 2018Publication date: January 17, 2019Inventors: LI-YEN FANG, CHIH-CHANG HUANG, JUNG-CHIH TSAO, YAO-HSIANG LIANG, YU-KU LIN
-
Patent number: 10074594Abstract: A semiconductor structure includes a substrate including a first side, a second side opposite to the first side, and a device layer over the second side, and a conductive via extending through the substrate, and including a first portion adjacent to the first side and a second portion adjacent to the device layer, wherein the conductive via includes an interface between the first portion and the second portion, an average grain size of the first portion is substantially different from an average grain size of the second portion.Type: GrantFiled: April 17, 2015Date of Patent: September 11, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Li-Yen Fang, Chih-Chang Huang, Jung-Chih Tsao, Yao-Hsiang Liang, Yu-Ku Lin
-
Patent number: 9991204Abstract: A semiconductor device includes a substrate, a dielectric structure, a barrier layer, a glue layer, a copper seed layer and a copper layer. The dielectric structure is disposed over the substrate. The dielectric structure has a through via hole passing through the dielectric structure, and a sidewall of the through via hole includes at least one indentation. The barrier layer conformally covers the sidewall and a bottom of the through via hole. The glue layer conformally covers the barrier layer. The copper seed layer conformally covers the glue layer. The copper layer covers the copper seed layer and fills the through via hole.Type: GrantFiled: June 21, 2017Date of Patent: June 5, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Li-Yen Fang, Jung-Chih Tsao, Yao-Hsiang Liang, Yu-Ku Lin
-
Patent number: 9859124Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes providing a substrate with a dielectric disposed thereon, wherein the dielectric has a recess formed by a plurality of exposed surfaces; forming a conductive film on the plurality of exposed surfaces; applying a surface agent to the recess so that the surface agent adheres to a portion of the conductive film; immersing the substrate into an electroplating solution comprising metallic ions; and applying a bias to the conductive film in order to fill metallic material in the recess.Type: GrantFiled: April 17, 2015Date of Patent: January 2, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDInventors: Li-Yen Fang, Jung-Chih Tsao, Yao-Hsiang Liang, Yu-Ku Lin
-
Publication number: 20170287841Abstract: A semiconductor device includes a substrate, a dielectric structure, a barrier layer, a glue layer, a copper seed layer and a copper layer. The dielectric structure is disposed over the substrate. The dielectric structure has a through via hole passing through the dielectric structure, and a sidewall of the through via hole includes at least one indentation. The barrier layer conformally covers the sidewall and a bottom of the through via hole. The glue layer conformally covers the barrier layer. The copper seed layer conformally covers the glue layer. The copper layer covers the copper seed layer and fills the through via hole.Type: ApplicationFiled: June 21, 2017Publication date: October 5, 2017Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Li-Yen FANG, Jung-Chih TSAO, Yao-Hsiang LIANG, Yu-Ku LIN
-
Patent number: 9711454Abstract: A semiconductor device includes a substrate, a dielectric structure, a barrier layer, a glue layer, a copper seed layer and a copper layer. The dielectric structure is disposed over the substrate. The dielectric structure has a through via hole passing through the dielectric structure, and a sidewall of the through via hole includes at least one indentation. The barrier layer conformally covers the sidewall and a bottom of the through via hole. The glue layer conformally covers the barrier layer. The copper seed layer conformally covers the glue layer. The copper layer covers the copper seed layer and fills the through via hole.Type: GrantFiled: August 29, 2015Date of Patent: July 18, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Li-Yen Fang, Jung-Chih Tsao, Yao-Hsiang Liang, Yu-Ku Lin
-
Patent number: 9601535Abstract: The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a substrate having a front surface and a back surface, a plurality of sensor elements disposed at the front surface of the substrate. Each of the plurality of sensor elements is operable to sense radiation projected towards the back surface of the substrate. The image sensor also includes a high-k dielectric grid disposed over the back surface of the substrate. The high-k dielectric grid has a high-k dielectric trench and sidewalls. The image sensor also includes a color filter and a microlens disposed over the high-k dielectric grid.Type: GrantFiled: June 6, 2013Date of Patent: March 21, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shiu-Ko Jang Jian, Chih-Nan Wu, Chun Che Lin, Yu-Ku Lin
-
Publication number: 20170062343Abstract: A semiconductor device includes a substrate, a dielectric structure, a barrier layer, a glue layer, a copper seed layer and a copper layer. The dielectric structure is disposed over the substrate. The dielectric structure has a through via hole passing through the dielectric structure, and a sidewall of the through via hole includes at least one indentation. The barrier layer conformally covers the sidewall and a bottom of the through via hole. The glue layer conformally covers the barrier layer. The copper seed layer conformally covers the glue layer. The copper layer covers the copper seed layer and fills the through via hole.Type: ApplicationFiled: August 29, 2015Publication date: March 2, 2017Inventors: Li-Yen FANG, Jung-Chih TSAO, Yao-Hsiang LIANG, Yu-Ku LIN
-
Publication number: 20160307761Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes providing a substrate with a dielectric disposed thereon, wherein the dielectric has a recess formed by a plurality of exposed surfaces; forming a conductive film on the plurality of exposed surfaces; applying a surface agent to the recess so that the surface agent adheres to a portion of the conductive film; immersing the substrate into an electroplating solution comprising metallic ions; and applying a bias to the conductive film in order to fill metallic material in the recess.Type: ApplicationFiled: April 17, 2015Publication date: October 20, 2016Inventors: LI-YEN FANG, JUNG-CHIH TSAO, YAO-HSIANG LIANG, YU-KU LIN
-
Publication number: 20160307823Abstract: A semiconductor structure includes a substrate including a first side, a second side opposite to the first side, and a device layer over the second side, and a conductive via extending through the substrate, and including a first portion adjacent to the first side and a second portion adjacent to the device layer, wherein the conductive via includes an interface between the first portion and the second portion, an average grain size of the first portion is substantially different from an average grain size of the second portion.Type: ApplicationFiled: April 17, 2015Publication date: October 20, 2016Inventors: LI-YEN FANG, CHIH-CHANG HUANG, JUNG-CHIH TSAO, YAO-HSIANG LIANG, YU-KU LIN
-
Patent number: 9419155Abstract: This description relates to a sensing product formed using a substrate with a plurality of epi-layers. At least a first epi-layer has a different composition than the composition of a second epi-layer. The sensing product optionally includes at least one radiation sensing element in the second epi-layer and optionally an interconnect structure over the second epi-layer. The sensing product is formed by removing the substrate and all epi-layers other than the second epi-layer. A light incident surface of the second epi-layer has a total thickness variation of less than about 0.15 ?m.Type: GrantFiled: January 5, 2012Date of Patent: August 16, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Chieh Chang, Yu-Ku Lin, Ying-Lang Wang
-
Publication number: 20150279880Abstract: A backside illuminated (BSI) image sensor device includes: a substrate including a front side and a back side; a multilayer structure over the back side; and a radiation-sensing region in the substrate. The radiation-sensing region is configured to receive a radiation wave entering from the back side and transmitting through the multilayer structure. The multilayer structure includes a first high-k dielectric layer, a metal silicide layer and a second high-k dielectric layer. The first high-k dielectric layer is located over the back side. The metal silicide layer is sandwiched between the first high-k dielectric layer and the second high-k dielectric layer.Type: ApplicationFiled: March 31, 2014Publication date: October 1, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: SHIU-KO JANGJIAN, CHUN CHE LIN, YU-KU LIN, YING-LANG WANG, CHUAN-PU LIU