Abstract: A multi junction solar cell structure includes a first sub-cell, a first tunnel diode layer, a second tunnel diode layer, a second sub-cell, a lattice gradient buffer layer and a third sub-cell. The first sub-cell includes a first surface and a second surface opposite to the first surface. The first tunnel diode layer is formed on the first surface of the first sub-cell. The second sub-cell is formed on the first tunnel diode layer. The second tunnel diode layer is formed on the second surface of the first sub-cell. The lattice gradient buffer layer is formed on the second tunnel diode. The third sub-cell is formed on the lattice gradient buffer layer. This disclosure also contains a method for manufacturing the above-mentioned multi-junction solar cell.

Abstract: A multi junction solar cell structure includes a first sub-cell, a first tunnel diode layer, a second tunnel diode layer, a second sub-cell, a lattice gradient buffer layer and a third sub-cell. The first sub-cell includes a first surface and a second surface opposite to the first surface. The first tunnel diode layer is formed on the first surface of the first sub-cell. The second sub-cell is formed on the first tunnel diode layer. The second tunnel diode layer is formed on the second surface of the first sub-cell. The lattice gradient buffer layer is formed on the second tunnel diode. The third sub-cell is formed on the lattice gradient buffer layer. This disclosure also contains a method for manufacturing the above-mentioned multi-junction solar cell.

Abstract: The invention is a special designed pattern heterogeneous substrate, which is epitaxially deposited on a heterogeneous substrate by two step growth, and a thermal cycle annealing is added to reduce the lattice mismatch between the layers and the difference in thermal expansion coefficient, thereby obtaining a better stress. The quality of the semiconductor epitaxial layer is improved, and the present invention can easily grasp the timing of stress release when the semiconductor is grown on the heterogeneous substrate, avoid cracks in the semiconductor epitaxial layer, and form a crack free zone in the middle of the semiconductor epitaxial layer.

Abstract: The invention is a special designed pattern heterogeneous substrate, which is epitaxially deposited on a heterogeneous substrate by two step growth, and a thermal cycle annealing is added to reduce the lattice mismatch between the layers and the difference in thermal expansion coefficient, thereby obtaining a better stress. The quality of the semiconductor epitaxial layer is improved, and the present invention can easily grasp the timing of stress release when the semiconductor is grown on the heterogeneous substrate, avoid cracks in the semiconductor epitaxial layer, and form a crack free zone in the middle of the semiconductor epitaxial layer.

Abstract: A functional module board for outputting an output signal to an application terminal includes a main board and a sub board. The main board includes a processor and a main board connector. The sub board includes a sub board connector, a signal converter, and a signal output terminal. The main board connector is detachably connected to the sub board connector, and the processor sends a native signal to the sub board. The sub board converts the native signal to the output signal via the signal converter after receiving the native signal, and the signal output terminal outputs the output signal to the application terminal. The functional module board of the present application can change the design of the sub board according to different application terminal requirements in the case of the same main board to save the development cost.

Abstract: A functional module board for outputting an output signal to an application terminal includes a main board and a sub board. The main board includes a processor and a main board connector. The sub board includes a sub board connector, a signal converter, and a signal output terminal. The main board connector is detachably connected to the sub board connector, and the processor sends a native signal to the sub board. The sub board converts the native signal to the output signal via the signal converter after receiving the native signal, and the signal output terminal outputs the output signal to the application terminal. The functional module board of the present application can change the design of the sub board according to different application terminal requirements in the case of the same main board to save the development cost.

Abstract: The present invention related to a lift-off structure adapted to a substrate having a photoelectric device, the structure comprising: a buffer layer, forming on the substrate; an upper sacrificial layer, forming on the buffer layer; an etch stop layer, forming on the upper sacrificial layer, and the photoelectric device structure forming on the etch stop layer.

Abstract: A lift-off structure for substrate of a photoelectric device and method thereof, which making it possible to enable an etching solution to flow through not only external etch channel but also internal etch channel to etch a sacrificial layer in order to increase the overall etching speed and decrease the overall time of lifting a substrate off.

Abstract: A lift-off structure for substrate of a photoelectric device and method thereof, which making it possible to enable an etching solution to flow through not only external etch channel but also internal etch channel to etch a sacrificial layer in order to increase the overall etching speed and decrease the overall time of lifting a substrate off.

Abstract: The present invention related to a lift-off structure adapted to a substrate having a photoelectric device, the structure comprising: a buffer layer, forming on the substrate; an upper sacrificial layer, forming on the buffer layer; an etch stop layer, forming on the upper sacrificial layer, and the photoelectric device structure forming on the etch stop layer.

Abstract: A photovoltaic apparatus includes a substrate, a light-concentrating heat sink unit and a solar cell. The light-concentrating heat sink unit includes a carrier connected to the substrate, at least two fins extending from the carrier, and at least two reflective layers each extending on a related one of the fins. The solar cell includes a lower electrode and a solder layer of low thermal resistance provided between the lower electrode and the carrier.

Abstract: Disclosed is a solar cell assembly with excellent photocurrent collection efficiency. The solar cell assembly includes a solar cell and a surface barrier layer. The solar cell includes a window layer. The surface barrier layer is provided on the window layer. The surface barrier layer is made of phosphide or arsenide.

Abstract: An ion source apparatus has an ion source assembly and a neutralizer. The ion source assembly has a body, a heat-dissipating device, an anode chunk and a gas distributor. The heat-dissipating device has a thermal transfer plate and a first thermal side sheet. The thermal transfer plate has a top, a protrusion and an annular disrupting recess. The protrusion is formed at the top of the thermal transfer plate. The disrupting recess is radially formed around the protrusion. The first thermal side sheet surrounds the protrusion. The gas distributor is mounted securely in the protrusion. Because the protrusion is located between the gas distributor and the first thermal side sheet and the disrupting recess is radially formed around the protrusion, accumulated ions, molecules and deposition film particles are longitudinally disrupted and do not form a short circuit between the gas distributor and the first thermal side sheet.

Abstract: An ion source apparatus has an ion source assembly and a neutralizer. The ion source assembly has a body, a heat-dissipating device, an anode chunk and a gas distributor. The heat-dissipating device has a thermal transfer plate and a first thermal side sheet. The thermal transfer plate has a top, a protrusion and an annular disrupting recess. The protrusion is formed at the top of the thermal transfer plate. The disrupting recess is radially formed around the protrusion. The first thermal side sheet surrounds the protrusion. The gas distributor is mounted securely in the protrusion. Because the protrusion is located between the gas distributor and the first thermal side sheet and the disrupting recess is radially formed around the protrusion, accumulated ions, molecules and deposition film particles are longitudinally disrupted and do not form a short circuit between the gas distributor and the first thermal side sheet.