Abstract: A high-frequency transmission element is provided. The high-frequency transmission element includes a connecting wire structure and an impedance matching plate structure. The connecting wire structure includes a connecting wire and a connecting pad. The connecting pad is located at an end of the connecting wire. The impedance matching plate structure includes an impedance matching plate body, an opening, and an impedance matching portion. The connecting pad is located in a projection range of the opening in a direction of orthographic projection of the impedance matching plate structure. The impedance matching portion is located in a periphery of the opening and extends in the direction from the connecting wire towards the connecting pad.

Abstract: A semiconductor device includes a gate structure on a substrate, a first spacer on a sidewall of the gate structure, a second spacer on a sidewall of the first spacer, a third spacer on a sidewall of the second spacer, and first and second stacks of an epitaxial layer and a cap layer respectively disposed at first and second sides of the gate structure. Preferably, a part of the second spacer comprises an I-shape, the cap layer includes a planar top surface and an inclined sidewall, the cap layer contacts the second spacer and the third spacer directly, and the cap layer includes a vertical sidewall connected to the inclined sidewall.

Abstract: A semiconductor device includes a gate structure on a substrate, a first spacer on a sidewall of the gate structure, a second spacer on a sidewall of the first spacer, a third spacer on a sidewall of the second spacer, and first and second stacks of an epitaxial layer and a cap layer respectively disposed at first and second sides of the gate structure. Preferably, a part of the second spacer comprises an I-shape, the cap layer includes a planar top surface and an inclined sidewall, the cap layer contacts the second spacer and the third spacer directly, and the cap layer includes a vertical sidewall connected to the inclined sidewall.

Abstract: The disclosure provides a display equipment, a brightness compensation device, and a brightness compensation method. The brightness compensation device includes a variable refresh rate (VRR) detection circuit and a control circuit. The VRR detection circuit and the control circuit receive a video stream from a video source device, and the video stream includes a VRR video frame. The VRR detection circuit detects a blanking period of the VRR video frame and generates a detection result. The control circuit outputs the frame data of the VRR video frame to the display device during the valid data period of the VRR video frame. The control circuit repeatedly outputs the frame data of the VRR video frame to the display device during the blanking period of the VRR video frame according to the detection result until the blanking period ends.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.

Abstract: The disclosure provides a display equipment, a brightness compensation device, and a brightness compensation method. The brightness compensation device includes a variable refresh rate (VRR) detection circuit and a control circuit. The VRR detection circuit and the control circuit receive a video stream from a video source device, and the video stream includes a VRR video frame. The VRR detection circuit detects a blanking period of the VRR video frame and generates a detection result. The control circuit outputs the frame data of the VRR video frame to the display device during the valid data period of the VRR video frame. The control circuit repeatedly outputs the frame data of the VRR video frame to the display device during the blanking period of the VRR video frame according to the detection result until the blanking period ends.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.

Abstract: A semiconductor device and a method for fabricating the semiconductor device are provided, in which the method includes the steps of forming a gate structure on a substrate, forming a spacer on a sidewall of the gate structure, forming two recesses adjacent to two sides of the spacer, performing a cleaning process to trim the spacer for forming a void between the spacer and the substrate, and forming two portions of an epitaxial layer in the two recesses. The semiconductor device preferably includes a cap layer on the two portions of the epitaxial layer as the cap layer includes a planar top surface and an inclined sidewall.

Abstract: A semiconductor device and a method for fabricating the semiconductor device are provided, in which the method includes the steps of forming a gate structure on a substrate, forming a spacer on a sidewall of the gate structure, forming two recesses adjacent to two sides of the spacer, performing a cleaning process to trim the spacer for forming a void between the spacer and the substrate, and forming two portions of an epitaxial layer in the two recesses. The semiconductor device preferably includes a cap layer on the two portions of the epitaxial layer as the cap layer includes a planar top surface and an inclined sidewall.

Abstract: The sanitization mechanism of the toilet seat is using control circuit(s) to ensure an enclosed compartment between toilet seat and toilet cover then activating UV LEDs to sanitize the toilet seat. In addition to safe operation, fast response and effective sanitization, it can reduce toilet seat paper or restroom chemicals consumption, especially in high traffic public locations.

Abstract: A display device capable of saving memory storage used for an overdriving function includes a compression unit, a frame buffer, a decompression unit and a look-up table (LUT) unit. The compression unit includes a decimation filter and is used for compressing data of a received frame and reducing a size of the received frame, to generate a compression frame. The frame buffer is coupled to the compression unit and used for storing the compression frame. The decompression unit includes an interpolation filter and is used for decompressing data of the compression frame outputted by the frame buffer and reducing a size of the compression frame, to generate a decompression frame. The LUT unit is coupled to the decompression unit and used for comparing the decompression frame with a next received frame of the received frame to determine an overdriving voltage.

Abstract: An air purifier with a sensor and/or timer switching function is proposed, which comprises: a photo sensor or motion detecting sensor and /or timer switching circuit to automatically activate or turn off or reduce the lighting intensity of lamp in the apparatus when ambient lighting or motion detecting signal is changed, or by programmed time period to reduce the possibility of harmful lighting like UV to the human directly.