Abstract: A substrate includes a dielectric structure, a conductive layer, a first hole and a second hole. The conductive layer is stacked on the dielectric structure. The first hole extends from a top surface of the conductive layer and exposes the dielectric structure. The second hole is spaced apart from the first hole, extends from the top surface of the conductive layer and exposes the dielectric structure. A first depth of the first hole is substantially equal to a second depth of the second hole. An elevation of a topmost end of the first hole is different from an elevation of a topmost end of the second hole.

Abstract: Self-assembled-monolayer grafted seeding and electroless plating processes for patterning of metal-alloy thin films, comprising the steps of treating the surface of the substrate by organic species, covering the organic species-SAM coated surface of dielectric substrate with a template, treating the surface by vacuum plasma, immersing the substrate into an aqueous solution, removing the hydrogen from the surface of the substrate, immersing the negatively charged dielectric surface into an aqueous metal salt solutions for adsorbing metal ions, reducing the positively charged metallic cations into neutral metal particles which act as catalysts by a reducing agent, and immersing the dielectric substrate into an electroless-plating solution for deposition of metal and metal-alloy thin film patterns.

Abstract: A telecommunications system gateway architecture comprises at least one service logic module communicatively coupled to a plurality of mediation layer modules, each respective mediation layer module adapted to interface the at least one service logic module with a respective different network domain.