Abstract: The present invention is directed to an electrophoretic dispersion comprising charged pigment particles dispersed in a solvent or solvent mixture, wherein at least one type of the charged pigment particles has an aggregation size about 2 to about 10 times their primary size and/or has a PDI in the range of 0.1 to 0.3. The electrophoretic dispersion of the present invention is capable of improving both image bistability and contrast ratio through adjusting the size distribution of the charged pigment particles.

Abstract: A semiconductor light emitting device is disclosed, which comprises: a substrate having a first surface and a second surface; a first semiconductor conductive layer is disposed on the first surface of the substrate; an insert layer is disposed on the first semiconductor conductive layer; an active layer is disposed on the insert layer; a second semiconductor conductive layer is disposed on the active layer; a first electrode is disposed on the second semiconductor conductive layer; and a second electrode is disposed on the second surface of the substrate, in which the electric of the second electrode is opposite to that of the first electrode.

Abstract: New anhydrous crystalline form of docetaxel and process of making anhydrous docetaxel and docetaxel trihydrate are provided.

Abstract: A Metal Oxide Semiconductor device includes a semiconductor substrate; a gate electrode formed on the surface of the substrate, having an offset spacer on each side; source/drain electrodes in the substrate having lightly doped regions respectively; metal silicide located on the gate electrode and the source/drain electrodes; and first impurity ions and second impurity ions in the lightly doped regions. A method for manufacturing a Metal Oxide Semiconductor device includes forming a gate electrode on a semiconductor substrate; implanting first impurity ions and second impurity ions to form lightly doped regions; depositing a dielectric layer and etching the dielectric layer to form offset spacers; implanting the first impurity ions to form the source/drain electrodes; forming metal silicide on the surfaces of the gate electrode and the source/drain regions. This invention can effectively prevent metal nickel diffusion into the lightly doped regions.