Abstract: Polymers polymerized from an alpha-olefin monomer and a carbon monoxide monomer. The polymers include a carbon-based backbone formed from carbons of the alpha-olefin monomer and the carbon of the carbon monoxide monomer. The polymer includes in-backbone ketones formed from the carbon monoxide monomer. The in-backbone ketones may include isolated ketones, alpha-branched ketones, or both. Methods of forming the polymer and compositions containing the polymer.

Abstract: Semiconductor devices are provided. A semiconductor device includes a power switch, a first power mesh and a second power mesh. The power switch has a first terminal and a second terminal. The first power mesh is directly connected to the first terminal of the power switch. The second power mesh is directly connected to the second terminal of the power switch. The first power mesh includes a first power rail over the power switch and extending in a first direction. The second power mesh includes a second power rail under the power switch and extending in the first direction. The first and second power rails are separated from each other.

Abstract: An antenna device includes a differential-line, a first metal and a second metal. The differential-line includes a first line and a second line. The first metal and second metal are coupled to the first line and second line respectively. The first metal and second metal have different shapes and/or different sizes. The first metal and second metal form symmetric or asymmetric dipole. The first metal and second metal can be disposed on the same plane or different planes, can be electrically insulated and can have a first slot and a second slot respectively. The antenna device can further include a base coupled to the first line and second line. The base can be a daughter board having a front-end module or not. The IC package in daughter board can have different sizes. The daughter board can be offset by different distances and can be coupled to a mother board.

Abstract: Examples described herein relate to an apparatus comprising: multiple processors and circuitry coupled to the multiple processors, wherein at least one of the multiple processors comprises multiple cores and wherein the circuitry is to provide the multiple processors with access to at least two firmware Trusted Platform Module (TPM) instances. At least two firmware TPM instances of the firmware TPM instances is to apply cryptography to store information for platform authentication and wherein the information for platform authentication comprises one or more of: user credentials, passwords, certificates, encryption keys, shared secrets, state information, or hash data.

Abstract: A method of forming a semiconductor arrangement includes forming a first capacitor in a first voltage domain and forming a second capacitor in the first voltage domain. The first capacitor is connected in parallel with the second capacitor. A third capacitor and a fourth capacitor are formed in a second voltage domain. The third capacitor is connected in series with the fourth capacitor. The first capacitor and the second capacitor are connected in parallel with a supply terminal of the first voltage domain and a reference terminal of the first voltage domain. The fourth capacitor is connected to a supply terminal of the second voltage domain. The third capacitor is connected to a reference terminal of the second voltage domain.

Abstract: An insole includes an insole body made of a breathable foam material, a fabric layer unit bonded to the insole body along a stacking axis, and a plurality of air holes. The insole body has a bottom surface, a top surface, and a plurality of air voids spatially interconnected and capable of connecting to the bottom surface and the top surface. The fabric layer unit includes a fabric layer and a waterproof membrane. The waterproof membrane is disposed between the fabric layer and the insole body, and is bonded to the top surface of the insole body. The air holes are connected to the fabric layer and the waterproof membrane. The air holes and the air voids are spatially interconnected. Each of the air holes has a hole width of less than 0.1 mm. The air holes and the air voids together form a plurality of air channels.

Abstract: Semiconductor devices are provided. A semiconductor device includes a semiconductor substrate, a power switch, a first power mesh and a second power mesh. The power switch is formed over the front surface of the semiconductor substrate. The first power mesh is formed over the power switch and is directly connected to the first terminal of the power switch. The second power mesh is formed over the back surface of the semiconductor substrate and is directly connected to the second terminal of the power switch.

Abstract: A method of forming a semiconductor arrangement includes forming a first capacitor in a first voltage domain and forming a second capacitor in the first voltage domain. The first capacitor is connected in parallel with the second capacitor. A third capacitor and a fourth capacitor are formed in a second voltage domain. The third capacitor is connected in series with the fourth capacitor. The first capacitor and the second capacitor are connected in parallel with a supply terminal of the first voltage domain and a reference terminal of the first voltage domain. The fourth capacitor is connected to a supply terminal of the second voltage domain. The third capacitor is connected to a reference terminal of the second voltage domain.

Abstract: Various layouts for conductive interconnects in the conductor layers in an integrated circuit are disclosed. Some or all of the conductive interconnects are included in a power delivery system. In general, the conductive interconnects in a first conductor layer are arranged according to an orthogonal layout and the conductive interconnects in a second conductor layer are arranged according to a non-orthogonal layout. Conductive stripes in a transition conductor layer positioned between the first and the second conductor layers electrically connect the conductive interconnects in the first conductor layer to the conductive interconnects in the second conductor layer.

Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate comprising a medium-voltage (MV) region and a low-voltage (LV) region, forming a first gate structure and a second gate structure on the MV region and a second gate structure on the LV region, forming a patterned mask on the MV region as the patterned mask covers the first gate structure and the second gate structure and exposes the substrate between the first gate structure and the second gate structure, and then forming a first epitaxial layer between the first gate structure and the second gate structure.

Abstract: Various layouts for conductive interconnects in the conductor layers in an integrated circuit are disclosed. Some or all of the conductive interconnects are included in a power delivery system. In general, the conductive interconnects in a first conductor layer are arranged according to an orthogonal layout and the conductive interconnects in a second conductor layer are arranged according to a non-orthogonal layout. Conductive stripes in a transition conductor layer positioned between the first and the second conductor layers electrically connect the conductive interconnects in the first conductor layer to the conductive interconnects in the second conductor layer.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a fin-shaped structure on a substrate, forming a first trench and a second trench in the fin-shaped structure, forming a first dielectric layer in the first trench and the second trench, removing part of the first dielectric layer, forming a second dielectric layer in the first trench and the second trench to form a first single diffusion break (SDB) structure and a second SDB structure, and then forming a gate structure on the fin-shaped structure, the first SDB structure, and the second SDB structure.

Abstract: In a method, cell placement is performed to place a plurality of cells into a region of an integrated circuit (IC). A thermal analysis is performed to determine whether the region of the IC is thermally stable at an operating condition. In response to a determination that the region of the IC is thermally unstable, at least one of a structure or the operating condition of the region of the IC is changed. After the thermal analysis, routing is performed to route a plurality of nets interconnecting the placed cells. At least one of the cell placement, the thermal analysis, the changing or the routing is executed by a processor.

Abstract: Examples described herein relate to multiple processor sockets comprising processors connected thereto and first circuitry. The first circuitry is to: based on a first mode of operation: configure the multiple processor sockets to operate with a single memory address space and share interfaces and based on a second mode of operation: configure the interfaces accessible to the multiple processor sockets to provide isolated communications to processor sockets in different partitions and configure the multiple processor sockets to operate in independent memory address spaces.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

Abstract: An illumination module includes a light source and a first optical element. The illumination module is set in an optical apparatus. The light source includes a plurality of lighting units and each lighting unit emits a light beam, wherein the light beam includes a colored light and the light source emits a plurality of light beams. The first optical element includes a plurality of optical units.

Abstract: A method for improving diabetic wound healing includes administering to a subject in need thereof a pharmaceutical composition including microRNA-200b (miR-200b). The miR-200b has a nucleotide sequence of SEQ ID NO: 2. The subject has a diabetic ulcer. The pharmaceutical composition further includes a pharmaceutically acceptable carrier and is administered by a route selected from the group consisting of parenteral administration and topical administration.

Abstract: A method of forming a semiconductor device including: providing a first circuit cell including a first pin cell; forming a connecting path originated from the first pin cell of the first circuit cell; performing an Electromigration (EM) checking process with a first parasitic capacitance of the first pin cell and a second parasitic capacitance of the connecting path by loading a loading capacitance file to determine whether the loading capacitance of the first pin cell is larger than a first predetermined capacitance; and substituting a second pin cell for the first pin cell when the loading capacitance of the first pin cell is larger than the first predetermined capacitance, wherein the second pin cell is different from the first pin cell.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.