Abstract: An integrated circuit includes a first cell, a second cell, a buffer zone and a first power rail. The first cell includes a first set of fins extending in a first direction. Each fin of the first set of fins corresponds to a transistor of a first set of transistors. The second cell includes a second set of fins extending in the first direction. Each fin of the second set of fins corresponds to a transistor of a second set of transistors. The second set of fins is separated from the first set of fins in a second direction. The buffer zone is between the first cell and the second cell. The first power rail extends in the first direction, and overlaps at least the buffer zone. The first power rail is in a first metal layer, and is configured to supply a first voltage.

Abstract: The present invention relates to a manufacturing method of a unique textured yarn by upgrading the equipment and processing the modified single-material precursor, the textured yarn thereof, and the fabric made with the textured yarn thereof. According to the method, titanium dioxide is added into a precursor of PET pre-oriented yarn with single filament DPF<0.5 to form the first precursor. Then, the first precursor is fed into a flat conveying roller, and then into a differential roller, and then into an accelerating roller to form a dark and light double colored textured yarn with linen-like appearance and tone. Then, the dark and light double colored textured yarn is conveyed to a heater for heating and setting, and then conveyed to a false twisting machine for processing. Finally, it is conveyed to a nozzle for spraying.

Abstract: Provided is an electronic package, in which a heat dissipating body is formed on an electronic device and is combined with a heat sink so that the electronic device, the heat dissipating body and the heat sink form a receiving space, and a heat dissipating material is formed in the receiving space and in contact with the heat sink and the electronic device, where a fluid regulating space is formed between the heat dissipating material and the heat dissipating body and is used as a volume regulating space for the heat dissipating material during thermal expansion and contraction.

Abstract: A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.

Abstract: A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.

Abstract: An electronic package is provided, in which a circuit board and a circuit block are embedded in an encapsulating layer at a distance to each other, and circuit structures are formed on the two opposite surfaces of the encapsulating layer with electronic components arranged on one of the circuit structures. The circuit block and the circuit board embedded in the encapsulating layer are spaced apart from each other to allow to separate current conduction paths. As such, the circuit board will not overheat, and issues associated with warpage of the circuit board can be eliminated. Moreover, by embedding the circuit block and the circuit board in the encapsulating layer at a distance to each other, the structural strength of the encapsulating layer can be improved.

Abstract: The invention provides a method for processing a substrate by using laser, which includes: a substrate providing step, providing a substrate; a fluid applying step, applying a fluid on the substrate; and a laser applying step, applying a laser to the substrate under the fluid so as to perform a laser processing on the substrate, wherein the types of laser processing include drilling, cutting, grooving, trimming or trenching. At the same time, the present invention also discloses a system for processing a substrate by using laser. Through the selection of different fluid types, the present invention can achieve different laser processing effects so as to meet market demands.

Abstract: A method of forming a semiconductor structure. A memory structure is formed on a substrate in the memory array region. A dielectric layer is deposited over the memory array region and peripheral region to cover the memory structure. A reverse etching process is performed to remove part of the dielectric layer from the central area of the memory array region, thereby forming an upwardly protruding wall structure along perimeter of the memory array region. The remaining thickness of the dielectric layer in the central area is equal to the sum of a polishing buffer thickness and a target thickness. A first polishing process is performed to remove the upwardly protruding wall structure from the memory array region. A second polishing process is performed to remove upper portion of the dielectric layer with the polishing buffer thickness from the memory array region.

Abstract: A method is provided that includes forming a first metal layer of a seal structure over a micro-electromechanical system (MEMS) structure and over a channel formed through the MEMS structure to an integrated circuit of a semiconductor structure. The first metal layer is formed at a first temperature. The method includes forming a second metal layer over the first metal layer. The second metal layer is formed at a second temperature less than the first temperature. The method includes performing a first cooling process to cool the semiconductor structure.

Abstract: An integrated circuit includes a first cell, a second cell, a buffer zone and a first power rail. The first cell includes a first set of fins extending in a first direction. Each fin of the first set of fins corresponds to a transistor of a first set of transistors. The second cell includes a second set of fins extending in the first direction. Each fin of the second set of fins corresponds to a transistor of a second set of transistors. The second set of fins is separated from the first set of fins in a second direction. The buffer zone is between the first cell and the second cell. The first power rail extends in the first direction, and overlaps at least the buffer zone. The first power rail is in a first metal layer, and is configured to supply a first voltage.

Abstract: An electronic device includes a battery module, a battery connector and a controller is provided. The battery connector includes a first connector and a second connector. The first connector is installed on the battery module and includes a first metal component and an enable pin. The first metal component is disposed on a housing of the first connector and is coupled to the enable pin. The second connector includes a second metal component, a detection pin and a ground pin. The second metal component is disposed on a housing of the second connector. The detection pin is coupled to the second metal component. The ground pin is coupled to a ground potential and its position corresponds to the position of the enable pin. The controller determines a connection status of the first connector and the second connector according to an external signal on the detection pin.

Abstract: An electronic package is provided, in which a circuit board and a circuit block are embedded in an encapsulating layer at a distance to each other, and circuit structures are formed on the two opposite surfaces of the encapsulating layer with electronic components arranged on one of the circuit structures. The circuit block and the circuit board embedded in the encapsulating layer are spaced apart from each other to allow to separate current conduction paths. As such, the circuit board will not overheat, and issues associated with warpage of the circuit board can be eliminated. Moreover, by embedding the circuit block and the circuit board in the encapsulating layer at a distance to each other, the structural strength of the encapsulating layer can be improved.

Abstract: A semiconductor structure includes first standard cells having first active regions formed over first alternating n-type and p-type wells, the first active regions and the first alternating n-type and p-type wells each extends lengthwise along a first direction, each of the first standard cells includes a first n-type well and a first p-type well; and second standard cells adjacent to the first standard cells, the second standard cells having second active regions formed over second alternating n-type and p-type wells, the second active regions and the second alternating n-type and p-type wells each extends lengthwise along the first direction, each of the second standard cells includes a second n-type well and a second p-type well. The first standard cells have a first cell height, the second standard cells have a second cell height, and the second cell height is greater than the first cell height.

Abstract: A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.

Abstract: An operation training system for ultrasound includes a sensing device, a data processing device and a display device. The sensing device is configured to sense a hand movement signal and a voice signal. The data processing device is configured to analyze the hand movement signal, control the virtual hand to move the virtual probe in the virtual scene and perform virtual ultrasound detection, and generate an answer content corresponding to the voice signal based on the question-and-answer model. The display device is configured to display the virtual scene and play the answer content.

Abstract: A semiconductor structure includes a first active region, a second active region and a dielectric wall. The second active region is disposed adjacent to the first active region, wherein there is a space between the first active region and the second active region. The dielectric wall is formed within the space between the first active region and the second active region. The dielectric wall has a first wall width and a second wall width different from the first wall width.

Abstract: An auto-regressive method for a large language model includes receiving a hidden state associated with at least one token, generating key data, first value data, and query data according to a received hidden state, generating first positionally encoded key data by encoding the key data positionally, generating positionally encoded query data by encoding the query data positionally, performing first element-wise dot product operations according to the first positionally encoded key data, the positionally encoded query data, and second positionally encoded key data to generate an attention score, performing second element-wise dot product operations according to the first value data, the attention score, and second value data to generate an attention output, and adding the attention output and the hidden state to generate an updated hidden output.

Abstract: A method of compiling a deep learning model includes reading metadata from a compiled result, the metadata indicating a structure of the deep learning model corresponding to a low-level IR, receiving shape information of an input tensor of the deep learning model, determining a shape of an output tensor of a first computation operation of the computation operations based on the shape information of the input tensor of the deep learning model and the structure of the deep learning model, tiling the output tensor of the first computation operation into one or more tiles according to the shape of the output tensor of the first computation operation and hardware limitations of a processor executing the deep learning model, and patching one or more copies of a templated hardware command into executable hardware commands.

Abstract: An electronic device is configured to execute instructions: compiling a first AI model and second AI model(s) to a first compiled file and second compiled file(s), respectively, wherein the first compiled file comprises a first data set and a first command set, and the second compiled file(s) comprises second data set(s) and second command set(s); generating light version file(s) for the AI model(s), wherein the light version file(s) comprises the second command set(s) and data patch(es); storing the first compiled file and the light version file(s) to a storage device; loading the first compiled file from the storage device to a memory; loading the light version file(s) from the storage device to the memory; generating the second data set(s) according to the first data set and the data patch(es); and executing the second AI model(s) according to the generated second data set(s) and the second command set(s) in the memory.

Abstract: An electronic package is provided and includes a plurality of electronic elements, a spacing structure connecting each of the plurality of electronic elements, and a plurality of conductive elements electrically connected to the plurality of electronic elements and serving as external contacts. The spacing structure has a recess to enhance the flexibility of the electronic elements after the electronic elements are connected to one another, thereby preventing the problem of warpage. A method for fabricating the electronic package is also provided.