Patents by Inventor Yu-Lung YANG
Yu-Lung YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11972957Abstract: A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.Type: GrantFiled: July 31, 2020Date of Patent: April 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-chun Yang, Chih-Lung Cheng, Yi-Ming Lin, Po-Chih Huang, Yu-Hsiang Juan, Xuan-Yang Zheng
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Patent number: 11948837Abstract: A method for making a semiconductor structure includes: providing a substrate with a contact feature thereon; forming a dielectric layer on the substrate; etching the dielectric layer to form an interconnect opening exposing the contact feature; forming a metal layer on the dielectric layer and outside of the contact feature; and forming a graphene conductive structure on the metal layer, the graphene conductive structure filling the interconnect opening, being electrically connected to the contact feature, and having at least one graphene layer that extends in a direction substantially perpendicular to the substrate.Type: GrantFiled: August 30, 2021Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ching-Fu Yeh, Chin-Lung Chung, Shu-Wei Li, Yu-Chen Chan, Shin-Yi Yang, Ming-Han Lee
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Patent number: 11948810Abstract: A vacuum apparatus includes process chambers, and a transfer chamber coupled to the process chambers. The transfer chamber includes one or more vacuum ports, thorough which a gas inside the transfer chamber is exhausted, and vent ports, from which a vent gas is supplied. The one or more vacuum ports and the vent ports are arranged such that air flows from at least one of the vent ports to the one or more vacuum ports are line-symmetric with respect to a center line of the transfer chamber.Type: GrantFiled: February 27, 2018Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Li-Chao Yin, Yuling Chiu, Yu-Lung Yang, Hung-Bin Lin
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Publication number: 20240071822Abstract: A method for manufacturing a semiconductor structure includes forming a first interconnect feature in a first dielectric feature, the first interconnect feature including a first conductive element exposed from the first dielectric feature; forming a first cap feature over the first conductive element, the first cap feature including a first cap element which includes a two-dimensional material; forming a second dielectric feature with a first opening that exposes the first cap element; forming a barrier layer over the second dielectric feature while exposing the first cap element from the barrier layer; removing a portion of the first cap element exposed from the barrier layer; and forming a second conductive element in the first opening.Type: ApplicationFiled: August 31, 2022Publication date: February 29, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chin-Lung CHUNG, Shin-Yi YANG, Yu-Chen CHAN, Han-Tang HUNG, Shu-Wei LI, Ming-Han LEE
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Publication number: 20220351948Abstract: An apparatus includes a chamber, a pedestal configured to receive and support a semiconductor wafer in the chamber, and an edge ring disposed over the pedestal. The edge ring includes a first portion having a first top surface, a second portion coupled to the first portion and having a second top surface lower than the first top surface, and a recess defined in the first portion. The second top surface is under the semiconductor wafer. The recess has a depth, and a distance between the pedestal and an inner surface of the recess is substantially equal to the depth of the recess.Type: ApplicationFiled: July 12, 2022Publication date: November 3, 2022Inventors: HUNG-BIN LIN, LI-CHAO YIN, SHIH-TSUNG CHEN, YU-LUNG YANG, YING CHIEH WANG, BING KAI HUANG, SU-YU YEH
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Publication number: 20210249232Abstract: An apparatus includes a chamber, a pedestal configured to receive and support a semiconductor wafer in the chamber, and an edge ring disposed over the pedestal. The edge ring includes a first portion having a first top surface, a second portion coupled to the first portion and having a second top surface lower than the first top surface, and a recess defined in the first portion. The second top surface is under the semiconductor wafer. The recess has a depth, and a distance between the pedestal and an inner surface of the recess is substantially equal to the depth of the recess.Type: ApplicationFiled: February 10, 2020Publication date: August 12, 2021Inventors: HUNG-BIN LIN, LI-CHAO YIN, SHIH-TSUNG CHEN, YU-LUNG YANG, YING CHIEH WANG, BING KAI HUANG, SU-YU YEH
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Patent number: 10748768Abstract: A method includes forming mandrel patterns over a substrate; depositing a spacer layer over the mandrel patterns and onto sidewalls of the mandrel patterns; trimming the spacer layer to reduce a thickness of the spacer layer along a pattern width direction; and etching the spacer layer to expose the mandrel patterns, resulting in a patterned spacer layer on the sidewalls of the mandrel patterns. The trimming of the spacer layer and the etching of the spacer layer are performed in separate processes. After the trimming of the spacer layer and the etching of the spacer layer, the method further includes removing the mandrel patterns.Type: GrantFiled: December 12, 2018Date of Patent: August 18, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu Chao Lin, Chao-Cheng Chen, Chun-Hung Lee, Yu-Lung Yang
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Publication number: 20190148177Abstract: A vacuum apparatus includes process chambers, and a transfer chamber coupled to the process chambers. The transfer chamber includes one or more vacuum ports, thorough which a gas inside the transfer chamber is exhausted, and vent ports, from which a vent gas is supplied. The one or more vacuum ports and the vent ports are arranged such that air flows from at least one of the vent ports to the one or more vacuum ports are line-symmetric with respect to a center line of the transfer chamber.Type: ApplicationFiled: February 27, 2018Publication date: May 16, 2019Inventors: Li-Chao YIN, Y. L. CHIU, Yu-Lung YANG, Hung-Bin LIN
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Publication number: 20190122888Abstract: A method includes forming mandrel patterns over a substrate; depositing a spacer layer over the mandrel patterns and onto sidewalls of the mandrel patterns; trimming the spacer layer to reduce a thickness of the spacer layer along a pattern width direction; and etching the spacer layer to expose the mandrel patterns, resulting in a patterned spacer layer on the sidewalls of the mandrel patterns. The trimming of the spacer layer and the etching of the spacer layer are performed in separate processes. After the trimming of the spacer layer and the etching of the spacer layer, the method further includes removing the mandrel patterns.Type: ApplicationFiled: December 12, 2018Publication date: April 25, 2019Inventors: Yu Chao Lin, Chao-Cheng Chen, Chun-Hung Lee, Yu-Lung Yang
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Patent number: 10157742Abstract: An integrated circuit manufacturing method includes forming mandrel patterns over a patterning layer of a substrate; and forming a spacer layer over the patterning layer, over the mandrel patterns, and onto sidewalls of the mandrel patterns. The method further includes trimming the spacer layer using a dry etching technique such that a space between adjacent sidewalls of the spacer layer substantially matches a dimension of the mandrel patterns along a pattern width direction. The method further includes etching the spacer layer to expose the mandrel patterns and the patterning layer, resulting in a patterned spacer layer on the sidewalls of the mandrel patterns. After the trimming of the spacer layer and the etching of the spacer layer, the method further includes removing the mandrel patterns. The method further includes transferring a pattern of the patterned spacer layer to the patterning layer.Type: GrantFiled: April 12, 2016Date of Patent: December 18, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu Chao Lin, Chao-Cheng Chen, Chun-Hung Lee, Yu-Lung Yang
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Publication number: 20170194147Abstract: An integrated circuit manufacturing method includes forming mandrel patterns over a patterning layer of a substrate; and forming a spacer layer over the patterning layer, over the mandrel patterns, and onto sidewalls of the mandrel patterns. The method further includes trimming the spacer layer using a dry etching technique such that a space between adjacent sidewalls of the spacer layer substantially matches a dimension of the mandrel patterns along a pattern width direction. The method further includes etching the spacer layer to expose the mandrel patterns and the patterning layer, resulting in a patterned spacer layer on the sidewalls of the mandrel patterns. After the trimming of the spacer layer and the etching of the spacer layer, the method further includes removing the mandrel patterns. The method further includes transferring a pattern of the patterned spacer layer to the patterning layer.Type: ApplicationFiled: April 12, 2016Publication date: July 6, 2017Inventors: Yu Chao Lin, Chao-Cheng Chen, Chun-Hung Lee, Yu-Lung Yang
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Patent number: 8920888Abstract: A chuck and a wafer supported thereon are rotated during a plasma process or a film deposition process to reduce thickness non-uniformity of a film processed or deposited on the wafer.Type: GrantFiled: April 4, 2012Date of Patent: December 30, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Lung Yang, Ying Xiao, Chin-Hsiang Lin
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Publication number: 20130264308Abstract: A chuck and a wafer supported thereon are rotated during a plasma process or a film deposition process to reduce thickness non-uniformity of a film processed or deposited on the wafer.Type: ApplicationFiled: April 4, 2012Publication date: October 10, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yu-Lung YANG, Ying XIAO, Chin-Hsiang LIN