Abstract: An integrated circuit chip includes a substrate, a device layer, an interconnection layer, a sealing base layer and a sealing ring stack layer. The substrate has a sealing region and a chip region. The sealing region is disposed around the chip region. The device layer is disposed within the chip region. The interconnection layer is disposed over and connected with the device layer. The sealing base layer is disposed within the sealing region. The sealing ring stack layer is disposed over and connected with the sealing base layer. A manufacturing process of the integrated circuit chip is also disclosed.

Abstract: An integrated circuit chip includes a substrate, a device layer, an interconnection layer, a sealing base layer and a sealing ring stack layer. The substrate has a sealing region and a chip region. The sealing region is disposed around the chip region. The device layer is disposed within the chip region. The interconnection layer is disposed over and connected with the device layer. The sealing base layer is disposed within the sealing region. The sealing ring stack layer is disposed over and connected with the sealing base layer. A manufacturing process of the integrated circuit chip is also disclosed.

Abstract: A wafer level testing and bumping process is provided. A plurality of test pads serving as testing point for testing and analyzing the circuits within the wafer is formed on the active surface of the wafer. The test pads are electrically connected to the flip-chip bonding pads respectively. The test pads are positioned on the peripheral section of the active surface. The tip of probe pins hanging from a cantilever probe card touches the test pads so that the wafer can be tested through the probe pins to obtain some test results. Whether to cut a particular fuse line underneath a fuse window by aiming a laser beam at the fuse window can be determined according to the test results. Finally, a passivation layer and bumps are formed on the active surface of the wafer and then the wafer is cut to form a plurality of single chips ready for performing subsequent packing processes.

Abstract: A wafer level testing and bumping process is provided. A plurality of test pads serving as testing point for testing and analyzing the circuits within the wafer is formed on the active surface of the wafer. The test pads are electrically connected to the flip-chip bonding pads respectively. The test pads are positioned on the peripheral section of the active surface. The tip of probe pins hanging from a cantilever probe card touches the test pads so that the wafer can be tested through the probe pins to obtain some test results. Whether to cut a particular fuse line underneath a fuse window by aiming a laser beam at the fuse window can be determined according to the test results. Finally, a passivation layer and bumps are formed on the active surface of the wafer and then the wafer is cut to form a plurality of single chips ready for performing subsequent packing processes.

Abstract: A wafer level testing and bumping process is provided. A plurality of test pads serving as testing point for testing and analyzing the circuits within the wafer is formed on the active surface of the wafer. The test pads are electrically connected to the flip-chip bonding pads respectively. The test pads are positioned on the peripheral section of the active surface. The tip of probe pins hanging from a cantilever probe card touches the test pads so that the wafer can be tested through the probe pins to obtain some test results. Whether to cut a particular fuse line underneath a fuse window by aiming a laser beam at the fuse window can be determined according to the test results. Finally, a passivation layer and bumps are formed on the active surface of the wafer and then the wafer is cut to form a plurality of single chips ready for performing subsequent packing processes.

Abstract: A wafer level testing and bumping process is provided. A plurality of test pads serving as testing point for testing and analyzing the circuits within the wafer is formed on the active surface of the wafer. The test pads are electrically connected to the flip-chip bonding pads respectively. The test pads are positioned on the peripheral section of the active surface. The tip of probe pins hanging from a cantilever probe card touches the test pads so that the wafer can be tested through the probe pins to obtain some test results. Whether to cut a particular fuse line underneath a fuse window by aiming a laser beam at the fuse window can be determined according to the test results. Finally, a passivation layer and bumps are formed on the active surface of the wafer and then the wafer is cut to form a plurality of single chips ready for performing subsequent packing processes.