Abstract: A method of manufacturing a memory structure including the following steps is provided. A first pad layer is formed on a substrate. Isolation structures are formed in the first pad layer and the substrate. At least one shape modification treatment is performed on the isolation structures. Each shape modification treatment includes the following steps. A first etching process is performed on the first pad layer to reduce a height of the first pad layer and to form first openings exposing sidewalls of the isolation structures. After the first etching process is performed, a second etching process is performed on the isolation structures to modify shapes of the sidewalls of the isolation structures exposed by the first openings. The first pad layer is removed to form a second opening between two adjacent isolation structures.

Abstract: A method of manufacturing a memory structure including the following steps is provided. A first pad layer is formed on a substrate. Isolation structures are formed in the first pad layer and the substrate. At least one shape modification treatment is performed on the isolation structures. Each shape modification treatment includes the following steps. A first etching process is performed on the first pad layer to reduce a height of the first pad layer and to form first openings exposing sidewalls of the isolation structures. After the first etching process is performed, a second etching process is performed on the isolation structures to modify shapes of the sidewalls of the isolation structures exposed by the first openings. The first pad layer is removed to form a second opening between two adjacent isolation structures.

Abstract: A semiconductor fabrication method is provided. A substrate having thereon a base layer, a hard mask layer, and a core layer is prepared. A resist pattern is transferred to the core layer, thereby forming a core pattern. The core pattern is subjected to a post-clean process. Thereafter, a spacer layer is deposited on the core pattern. The spacer layer is etched to form spacer pattern on each sidewall of the core pattern. The core pattern is then removed. The spacer pattern is transferred to the underlying hard mask layer and the base layer.

Abstract: A method of fabricating a semiconductor component that including the following steps is provided. A plurality of stacked structures is formed on a substrate. A first dielectric layer is formed to cover the stacked structures, wherein the first dielectric layer has a plurality of overhangs, the overhangs wrap top portions of the stacked structures. A dry conformable etching process is performed to conformably remove the first dielectric layer until a portion of the first dielectric layer located outside of the overhangs is removed. A second dielectric layer is formed on the stacked structures, wherein the second dielectric layer connects the adjacent overhangs to form an air gap between the stacked structures.

Abstract: A method of fabricating a semiconductor component that including the following steps is provided. A plurality of stacked structures is formed on a substrate. A first dielectric layer is formed to cover the stacked structures, wherein the first dielectric layer has a plurality of overhangs, the overhangs wrap top portions of the stacked structures. A dry conformable etching process is performed to conformably remove the first dielectric layer until a portion of the first dielectric layer located outside of the overhangs is removed. A second dielectric layer is formed on the stacked structures, wherein the second dielectric layer is connected to connects the adjacent overhangs to form an air gap between the stacked structures.

Abstract: A toothbrush includes: a hollow head portion defining a first fluid passage therein and having a bristle-mounting wall formed with a plurality of apertures in fluid communication with the first fluid passage; bristle bundles provided on the bristle-mounting wall, each of the bristle bundles being composed of a plurality of hollow bristles, each of the hollow bristles having a third fluid passage that has a connecting end in fluid communication with the first fluid passage and an open free end opposite to the connecting end; a hollow grip portion connected to the head portion and defining a second fluid passage therein, the second fluid passage being in fluid communication with the first fluid passage; and a suction unit connected to the grip portion and adapted to draw a fluid from an exterior of the bristle-mounting wall through the apertures and the third fluid passages.

Abstract: A toothbrush includes: a hollow head portion defining a first fluid passage therein and having a bristle-mounting wall formed with a plurality of apertures in fluid communication with the first fluid passage; bristles provided on the bristle-mounting wall of the head portion; a hollow grip portion connected to the head portion and defining a second fluid passage therein, the second fluid passage being in fluid communication with the first fluid passage; and a suction unit connected to the grip portion and adapted to draw a fluid from an exterior of the bristle-mounting wall of the hollow head portion through the apertures and the first and second fluid passages.