Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes: providing a substrate; forming a first nitride layer, a first sacrificial layer, a second nitride layer, a second sacrificial layer and a third nitride layer in sequence over the substrate; forming a first opening and a second opening, wherein the first opening exposes a first landing pad in the substrate, and the second opening exposes a second landing pad in the substrate; forming a first electrode in the first opening and a second electrode in the second opening; removing the first sacrificial layer and the second sacrificial layer concurrently; and forming a conductive layer, conformal to the first electrode, the second electrode, the first nitride layer, the second nitride layer and the third nitride layer.

Abstract: The present disclosure provides a semiconductor structure with a single side capacitor. The semiconductor structure includes a substrate having a first landing pad therein, and a first capacitor disposed over the substrate. The first capacitor includes: a first electrode, disposed over and extending vertically away from the first landing pad; a first dielectric layer, at least partially surrounding the first electrode, wherein the first electrode is shorter than the first dielectric layer; and a second electrode, surrounding the first dielectric layer and the first electrode.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes: providing a substrate; forming a first nitride layer, a first sacrificial layer, a second nitride layer, a second sacrificial layer and a third nitride layer in sequence over the substrate; forming a first opening and a second opening, wherein the first opening exposes a first landing pad in the substrate, and the second opening exposes a second landing pad in the substrate; forming a first electrode in the first opening and a second electrode in the second opening; removing the first sacrificial layer and the second sacrificial layer concurrently; and forming a conductive layer, conformal to the first electrode, the second electrode, the first nitride layer, the second nitride layer and the third nitride layer.

Abstract: The present disclosure provides a semiconductor structure with a single side capacitor. The semiconductor structure includes a substrate having a first landing pad therein, and a first capacitor disposed over the substrate. The first capacitor includes: a first electrode, disposed over and extending vertically away from the first landing pad; a first dielectric layer, at least partially surrounding the first electrode, wherein the first electrode is shorter than the first dielectric layer; and a second electrode, surrounding the first dielectric layer and the first electrode.