Abstract: A method of forming a semiconductor device includes: forming a gate structure over a fin that protrudes above a substrate; forming source/drain regions over the fin on opposing sides of the gate structure; forming a first dielectric layer and a second dielectric layer successively over the source/drain regions; performing a first etching process to form an opening in the first dielectric layer and in the second dielectric layer, where the opening exposes an underlying electrically conductive feature; after performing the first etching process, performing a second etching process to enlarge a lower portion of the opening proximate to the substrate; and forming a contact plug in the opening after the second etching process.

Abstract: A method for transferring an electronic device includes steps as follows. A flexible carrier is provided and has a surface with a plurality of electronic devices disposed thereon. A target substrate is provided corresponding to the surface of the flexible carrier. A pin is provided, and a pin end thereof presses on another surface of the flexible carrier without the electronic devices disposed thereon, so that the flexible carrier is deformed, causing at least one of the electronic devices to move toward the target substrate and to be in contact with the target substrate. A beam is provided to transmit at least a portion of the pin and emitted from the pin end to melt a solder. The electronic device is fixed on the target substrate by soldering. The pin is moved to restore the flexible carrier to its original shape, allowing the electronic device fixed by soldering to separate from the carrier.

Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes a substrate having a first active region, a second active region, and a word line connecting region between the first active region and the second active region, a first gate pattern extending along a first direction from the first active region to the second active region, a second gate pattern extending along the first direction from the first active region to the second active region, a first magnetic tunneling junction (MTJ) between the first gate pattern and the second pattern and within the word line connecting region, and a second MTJ between the first gate pattern and the second gate pattern in the first active region. Preferably, top surfaces of the first MTJ and the second MTJ are coplanar.

Abstract: A transmission device includes a daisy chain structure composed of at least three daisy chain units arranged periodically and continuously. Each of the daisy chain units includes first, second and third conductive lines, and first and second conductive pillars. The first and second conductive lines at a first layer extend along a first direction and are discontinuously arranged. The third conductive line at a second layer extends along the first direction and is substantially parallel to the first and second conductive lines. The first conductive pillar extends in a second direction. The second direction is different from the first direction. A first part of the first conductive pillar is connected to the first and third conductive lines. The second conductive pillar extends in the second direction. A first part of the second conductive pillar is connected to the second and third conductive lines.

Abstract: An electronic device is provided, including a main body and a camera module. The camera module has a frame, a lens unit disposed in the frame, a guiding member, and a hinge. The guiding member is affixed to the main body and has a rail and a spring sheet. The hinge pivotally connects to the frame and the guiding member. When the camera module is in the retracted position, the camera module is hidden in a recess of the main body. When the camera module slides out of the recess from the retracted position along the rail into the operational position, the spring sheet is pressed by the hinge to increase the friction between the hinge and the guiding member.

Abstract: A modified cutinase is disclosed. The cutinase has the modified amino acid sequence of SEQ ID NO: 2, wherein the modification is a substitution of asparagine at position 181 with alanine, or substitutions of asparagine at position 181 with alanine and phenylalanine at position 235 with leucine. The modified enzyme has improved PET-hydrolytic activity, and thus, the high-activity PET hydrolase is obtained, and the industrial application value of the PET hydrolase is enhanced.

Abstract: A semiconductor device includes a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, a MTJ on the MRAM region, a metal interconnection on the MTJ, and a blocking layer on the metal interconnection. Preferably, the blocking layer includes a stripe pattern according to a top view and the blocking layer could include metal or a dielectric layer.

Abstract: A method of forming a semiconductor device includes: forming a gate structure over a fin that protrudes above a substrate; forming source/drain regions over the fin on opposing sides of the gate structure; forming a first dielectric layer and a second dielectric layer successively over the source/drain regions; performing a first etching process to form an opening in the first dielectric layer and in the second dielectric layer, where the opening exposes an underlying electrically conductive feature; after performing the first etching process, performing a second etching process to enlarge a lower portion of the opening proximate to the substrate; and forming a contact plug in the opening after the second etching process.

Abstract: Methods and systems for forming a low-k material layer on a surface of a substrate and structures and devices formed using the method or system are disclosed. Exemplary methods include providing a substrate within a reaction chamber of a reactor system, providing one or more precursors to the reaction chamber, and providing high frequency, high plasma power to polymerize the one or more precursors to form dense low-k material with desired properties.

Abstract: A method for transferring an electronic device includes steps as follows. A flexible carrier is provided and has a surface with a plurality of electronic devices disposed thereon. A target substrate is provided corresponding to the surface of the flexible carrier. A pin is provided, and a pin end thereof presses on another surface of the flexible carrier without the electronic devices disposed thereon, so that the flexible carrier is deformed, causing at least one of the electronic devices to move toward the target substrate and to be in contact with the target substrate. A beam is provided to transmit at least a portion of the pin and emitted from the pin end to melt a solder. The electronic device is fixed on the target substrate by soldering. The pin is moved to restore the flexible carrier to its original shape, allowing the electronic device fixed by soldering to separate from the carrier.

Abstract: A method for transferring chips and a method for manufacturing an LED display are introduced. The method for manufacturing the LED display includes the method for transferring chips. The method for transferring chips includes providing a carrier substrate on which multiple LED chips are carried; providing a target substrate on which wires capable of forming circuits with the LED chips are disposed; transferring the LED chips carried on the carrier substrate onto the wires; galvanizing the wires to trigger at least partial of the LED chips to generate light by the circuits formed; checking the LED chips forming the circuit and fixing the LED chips generating light on the wire; and removing LED chips which fail to generate light.

Abstract: Methods and systems for forming a structure including silicon-carbon material and structures formed using the methods or systems are disclosed. Exemplary methods include providing a first gas to the reaction space, providing a silicon-carbon precursor to the reaction space, ceasing a flow of the silicon-carbon precursor to the reaction space, forming a first plasma within the reaction space to thereby deposit silicon-carbon material on a surface of the substrate, and optionally treating the silicon-carbon material with activated species to form treated silicon-carbon material.

Abstract: A method of manufacturing a display module is provided and includes providing a substrate; disposing a plurality of light emitting components on the substrate in an array arrangement; and disposing at least one optical sensor on the substrate, wherein the at least one optical sensor is located between corresponding two of the plurality of light emitting components when the plurality of light emitting components and the at least one optical sensor are disposed on the substrate. Besides, a full screen image display device including a display module prepared in accordance with the aforementioned method is provided. The present invention can provide a full screen image without any notch.

Abstract: A chip-transferring system and a chip-transferring method are provided. The chip-transferring system includes a substrate-carrying module for carrying a chip-carrying structure, a chip-transferring module, and a system control module. The chip-carrying structure includes a circuit substrate for carrying a plurality of conductive materials, a plurality of micro heaters, and a micro heater control chip. The chip-transferring module is configured for transferring a chip onto two corresponding ones of the conductive materials, and the chip-transferring module includes a motion sensing chip. When chip movement information of the chip that is provided by the motion sensing chip is transmitted to the system control module, the micro heater control chip is configured to control a corresponding one of the micro heaters to start or stop heating the two corresponding conductive materials by control of the system control module according to the chip movement information of the chip.

Abstract: A chip-carrying structure and a chip-bonding method are provided. The chip-carrying structure includes a circuit substrate for carrying a plurality of conductive materials, a plurality of micro heaters disposed on or inside the circuit substrate, and a micro heater control chip electrically connected to the micro heaters. Therefore, when a chip is disposed on two corresponding ones of the conductive materials, the micro heater control chip is configured to control a corresponding one of the micro heaters to start or stop heating the two corresponding conductive materials according to chip movement information of the chip.

Abstract: A light-emitting chip carrying structure and a method of manufacturing the same are provided. The method includes transferring a plurality of light-emitting chips to a circuit substrate; driving a leveling substrate to concurrently press the light-emitting chip by a carrier device such that a plurality of distances each defined between a light-emitting surface of each of the light-emitting chips and a top surface of the circuit substrate are the same; fixing the light-emitting chips on the circuit substrate by a heating device while the light-emitting chips are pressed by the leveling substrate; and then removing the leveling substrate by the carrier device. Therefore, the light-emitting surfaces of the light-emitting chips relative to the top surface of the circuit substrate have the same flatness, and the light-emitting surfaces of the light-emitting chips are disposed on the same plane.

Abstract: A structure of a light-emitting device includes the following components: a substrate; an epitaxial structure on the substrate, the epitaxial structure including at least a first conductivity type semiconductor layer, a light-emitting active layer, and a second conductivity type semiconductor layer; a first electrode on the first conductivity type semiconductor layer; a transparent conductive layer between the first electrode and the first conductivity type semiconductor layer; and a three-dimensional distributed Bragg reflector (DBR) layer between the transparent conductive layer and the first conductivity type semiconductor layer.

Abstract: A structure of a light-emitting device includes the following components: a substrate; an epitaxial structure on the substrate, the epitaxial structure including at least a first conductivity type semiconductor layer, a light-emitting active layer, and a second conductivity type semiconductor layer; a first electrode on the first conductivity type semiconductor layer; a transparent conductive layer between the first electrode and the first conductivity type semiconductor layer; and a three-dimensional distributed Bragg reflector (DBR) layer between the transparent conductive layer and the first conductivity type semiconductor layer.

Abstract: A two-stage balancer for a multi-lamp backlight is electrically connected to a driving unit through a driving transformer. The two-stage balancer includes a plurality of first balancing transformers, second balancing transformers, and lighting units. Each of the first balancing transformers is electrically connected to the corresponding second balancing transformers to form a two-stage structure. In addition, a primary winding and a secondary winding of the second balancing transformer is electrically connected in series to one lighting unit, respectively, to form a circuit loop. Further, each of the circuit loops is electrically connected in parallel. Whereby the two-stage balancer provides much better current balance between the parallel circuit loops, and outputs a sinusoid-like driving current to increase lighting efficacy and further maintain uniform brightness of the multi-lamp backlight.

Abstract: A machine adapted to fade the color of jeans, including a framework, a bleaching trough holding a bleaching solution for bleaching jeans, a carrier plate adapted to carry jeans and to move vertically between two upright guide bars of the framework for permitting carried jeans to be dipped in the bleaching solution for bleaching, a reversible motor controlled to move the carrier plate up and down, and two steel wires wound round pulleys at a cross beam of the framework and coupled between an output shaft of the reversible motor and the carrier plate and driven by the reversible motor to lift or lower the carrier plate for permitting carried jeans to be dipped in or taken out of the bleaching solution.