Abstract: The present disclosure provides a touch device and a manufacturing method thereof. The touch device includes a substrate, a touch electrode layer, a protective layer, and a plurality of wires. The substrate includes a first region and a second region, in which the second region is adjacent to the first region. The touch electrode layer is disposed in the first region and is completely covered by the protective layer. The protective layer has a plurality of openings. The openings expose a portion of the touch electrode layer and extend from the first region to the second region. Each wire is formed in the corresponding openings and extends from the portion of the touch electrode layer to the second region, in which each opening is partially filled with one of the wires, and thereby a recess is defined in each opening.

Abstract: The present disclosure provides a touch device and a manufacturing method thereof. The touch device includes a substrate, a touch electrode layer, a protective layer, and a plurality of wires. The substrate includes a first region and a second region, in which the second region is adjacent to the first region. The touch electrode layer is disposed in the first region and is completely covered by the protective layer. The protective layer has a plurality of openings. The openings expose a portion of the touch electrode layer and extend from the first region to the second region. Each wire is formed in the corresponding openings and extends from the portion of the touch electrode layer to the second region, in which each opening is partially filled with one of the wires, and thereby a recess is defined in each opening.

Abstract: A method for manufacturing semiconductor device is provided. A substrate having a memory region and a capacitance region is provided. A plurality of word line structures are formed on the memory region of the substrate. A capacitance structure is formed on the capacitance region of the substrate. The word line structures and the capacitance structure each include a first dielectric layer on the substrate, a first conductive layer on the first dielectric layer, a second dielectric layer on the first conductive layer, and a second conductive layer on the second dielectric layer. The second conductive layers of the word line structures close to an edge of the memory region and a portion of the second conductive layer of the capacitance structure are removed at the same time to form a trench exposing a portion of the second dielectric layer.

Abstract: Various embodiments provide a self-merged profile (SMP) method for fabricating a semiconductor device and a device fabricated using an SMP method. In an example embodiment, a semiconductor device is provided. The example semiconductor device comprises (a) a plurality of conductive lines; (b) a plurality of conductive pads; (c) a plurality of dummy tails; and (d) a plurality of closed loops. Each of the plurality of conductive pads is associated with one of the plurality of conductive lines, one of the plurality of dummy tails, and one of the plurality of closed loops. In example embodiments, the plurality of dummy tails and the plurality of closed loops are formed as residuals of the process used to create the plurality of conductive lines and the plurality of conductive pads.

Abstract: Various embodiments provide a self-merged profile (SMP) method for fabricating a semiconductor device and a device fabricated using an SMP method. In an example embodiment, a semiconductor device is provided. The example semiconductor device comprises (a) a plurality of conductive lines; (b) a plurality of conductive pads; (c) a plurality of dummy tails; and (d) a plurality of closed loops. Each of the plurality of conductive pads is associated with one of the plurality of conductive lines, one of the plurality of dummy tails, and one of the plurality of closed loops. In example embodiments, the plurality of dummy tails and the plurality of closed loops are formed as residuals of the process used to create the plurality of conductive lines and the plurality of conductive pads.

Abstract: Provided are improved semiconductor memory devices and methods for manufacturing such semiconductor memory devices. A method may incorporate the patterning of the array and periphery regions in self-aligned quadruple patterning and provide semiconductor devices resulting from the combined patterning.

Abstract: Provided are improved semiconductor memory devices and methods for manufacturing such semiconductor memory devices. A method may incorporate the patterning of the array and periphery regions in self-aligned double patterning and provide semiconductor devices resulting from the combined patterning.

Abstract: Provided are improved semiconductor memory devices and methods for manufacturing such semiconductor memory devices. A method may incorporate the patterning of the array and periphery regions in self-aligned quadruple patterning and provide semiconductor devices resulting from the combined patterning.

Abstract: A memory device is provided having a plurality of floating gates and control gates, which at least one control gate has been removed after applying a flowable material to the semiconductor which prevents damage to the substrate when the control gate is removed. Methods of manufacturing such a memory device are also provided.

Abstract: A light emitting diode (LED) module and a display device adopting the same LED module are provided. The LED module includes a circuit substrate, a LED chip, a connector and a conductive line. The LED chip has at least three pins, and the LED chip is fixed on the circuit substrate through the pins, wherein one of the pins is defined as a no connection (NC) pin. The connector includes a non-conductive housing, at least one fixing pin and a conductor. The fixing pin is connected to the non-conductive housing, and the non-conductive housing is fixed on the circuit substrate through the said at least one fixing pin. A part of the non-conductive housing is covered with the conductor. The conductive line is disposed on the circuit substrate and is electrically connected between the conductor and the NC pin.

Abstract: An active/self-sensing compensating hydrostatic bearing is disposed between first and second structures to allow relative movement between the first and second structures. The hydrostatic bearing includes a body and a compensator. The body, fixed to the first structure and separated from the second structure by a first gap, has a chamber and an input passage and an output passage both communicating with the chamber. The compensator is disposed in the chamber. A compensating passage, communicating with the input passage and the output passage, is formed between the body and the compensator. A pressurized fluid flows from the input passage to the output passage through the compensating passage, and the pressurized fluid in the output passage flows to the first gap to maintain the stability and the rigidity for the relative movement between the first and second structures. A hydrostatic bearing module using the hydrostatic bearing is also disclosed.

Abstract: A light emitting diode (LED) module and a display device adopting the same LED module are provided. The LED module includes a circuit substrate, a LED chip, a connector and a conductive line. The LED chip has at least three pins, and the LED chip is fixed on the circuit substrate through the pins, wherein one of the pins is defined as a no connection (NC) pin. The connector includes a non-conductive housing, at least one fixing pin and a conductor. The fixing pin is connected to the non-conductive housing, and the non-conductive housing is fixed on the circuit substrate through the said at least one fixing pin. A part of the non-conductive housing is covered with the conductor. The conductive line is disposed on the circuit substrate and is electrically connected between the conductor and the NC pin.

Abstract: An active/self-sensing compensating hydrostatic bearing is disposed between first and second structures to allow relative movement between the first and second structures. The hydrostatic bearing includes a body and a compensator. The body, fixed to the first structure and separated from the second structure by a first gap, has a chamber and an input passage and an output passage both communicating with the chamber. The compensator is disposed in the chamber. A compensating passage, communicating with the input passage and the output passage, is formed between the body and the compensator. A pressurized fluid flows from the input passage to the output passage through the compensating passage, and the pressurized fluid in the output passage flows to the first gap to maintain the stability and the rigidity for the relative movement between the first and second structures. A hydrostatic bearing module using the hydrostatic bearing is also disclosed.

Abstract: A holder is disposed at a side of a back light module adjacent to a light incident side of a light guide plate (LGP). A light source module is fixed on a wall of the holder that faces the light incident side. A holder engager on a side wall of the LGP engages with an LGP retainer of the holder. When the LGP expands or contracts due to changes of temperature, the holder and the light source module move with the side of the LGP, thereby a gap between the light source module and the light incident side is maintained and the luminance of the backlight module is stabilized.

Abstract: A holder is disposed at a side of a back light module adjacent to a light incident side of a light guide plate (LGP). A light source module is fixed on a wall of the holder that faces the light incident side. A holder engager on a side wall of the LGP engages with an LGP retainer of the holder. When the LGP expands or contracts due to changes of temperature, the holder and the light source module move with the side of the LGP, thereby a gap between the light source module and the light incident side is maintained and the luminance of the backlight module is stabilized.