Patents by Inventor Yu Min Koh

Yu Min Koh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gallium nitride-based sensor having heater structure and method of manufacturing the same
    Patent number: 10418495
    Abstract: A gallium nitride-based sensor having a heater structure and a method of manufacturing the same are disclosed, the method including growing an n-type or p-type GaN layer on a substrate, growing a barrier layer on the n-type or p-type GaN layer, sequentially growing a u-GaN layer and a layer selected from among an AlxGa1-xN layer, an InxAl1-xN layer and an InxAlyGa1-x-yN layer on the barrier layer, patterning the n-type or p-type GaN layer to form an electrode, forming the electrode along the pattern formed on the n-type or p-type GaN layer, and forming a sensing material layer on the layer selected from among the AlxGa1-xN layer, the InxAl1-xN layer and the InxAlyGa1-x-yN layer, wherein a HEMT sensor or a Schottky diode sensor can be heated using an n-GaN (or p-GaN) layer, thus increasing the sensitivity of the sensor and reducing the restoration time.
    Type: Grant
    Filed: September 13, 2018
    Date of Patent: September 17, 2019
    Assignee: KOREA ADVANCED NANO FAB CENTER
    Inventors: Kyungho Park, Chuyoung Cho, Hyeong Ho Park, Yu Min Koh
  • GALLIUM NITRIDE-BASED SENSOR HAVING HEATER STRUCTURE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20190097067
    Abstract: A gallium nitride-based sensor having a heater structure and a method of manufacturing the same are disclosed, the method including growing an n-type or p-type GaN layer on a substrate, growing a barrier layer on the n-type or p-type GaN layer, sequentially growing a u-GaN layer and a layer selected from among an AlxGa1-xN layer, an InxAl1-xN layer and an InxAlyGa1-x-yN layer on the barrier layer, patterning the n-type or p-type GaN layer to form an electrode, forming the electrode along the pattern formed on the n-type or p-type GaN layer, and forming a sensing material layer on the layer selected from among the AlxGa1-xN layer, the InxAl1-xN layer and the InxAlyGa1-x-yN layer, wherein a HEMT sensor or a Schottky diode sensor can be heated using an n-GaN (or p-GaN) layer, thus increasing the sensitivity of the sensor and reducing the restoration time.
    Type: Application
    Filed: September 13, 2018
    Publication date: March 28, 2019
    Applicant: KOREA ADVANCED NANO FAB CENTER
    Inventors: Kyungho Park, Chuyoung Cho, Hyeong Ho Park, Yu Min Koh