Patents by Inventor Yu-Ming HUNG

Yu-Ming HUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multi-state magnetic memory device
    Patent number: 10204678
    Abstract: A multi-state MRAM device comprises N overlapping ovals defining a free ferromagnetic region. The size of the free ferromagnetic region is controlled the shape anisotropy of the configuration via at least a aspect ratio greater than 2, of the free ferromagnetic region. The free ferromagnetic region has a magnetic moment spontaneously aligned along the long axis in each oval outside the center region. A center magnetic moment has a multitude of exactly 2*N stable orientations determined by the magnetic moments in the segments of the ovals outside the center region. An embodiment is an MRAM device using tunneling junctions to achieve a multi-state memory configuration. Certain embodiments includes an electrically conducting heavy-metal layer disposed adjacent to and connected with the free ferromagnetic region. Some embodiments include a topological insulating material, such as Bi2Se3.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: February 12, 2019
    Assignees: NEW YORK UNIVERSITY, BAR-ILAN UNIVERSITY
    Inventors: Lior Klein, Yevgeniy Telepinsky, Mordechai Schultz, Andrew David Kent, Yu-Ming Hung
  • MULTI-STATE MAGNETIC MEMORY DEVICE
    Publication number: 20170278567
    Abstract: A multi-state MRAM device comprises N overlapping ovals defining a free ferromagnetic region. The size of the free ferromagnetic region is controlled the shape anisotropy of the configuration via at least a aspect ratio greater than 2, of the free ferromagnetic region. The free ferromagnetic region has a magnetic moment spontaneously aligned along the long axis in each oval outside the center region. A center magnetic moment has a multitude of exactly 2*N stable orientations determined by the magnetic moments in the segments of the ovals outside the center region. An embodiment is an MRAM device using tunneling junctions to achieve a multi-state memory configuration. Certain embodiments includes an electrically conducting heavy-metal layer disposed adjacent to and connected with the free ferromagnetic region. Some embodiments include a topological insulating material, such as Bi2Se3.
    Type: Application
    Filed: March 22, 2017
    Publication date: September 28, 2017
    Inventors: Lior KLEIN, Yevgeniy TELEPINSKY, Mordechai SCHULTZ, Andrew David KENT, Yu-Ming HUNG