Patents by Inventor Yu NAGATOMO
Yu NAGATOMO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11049730Abstract: A method of processing a workpiece includes: forming a ruthenium film on the workpiece and disposing a mask on the ruthenium film; etching the ruthenium film through a plasma processing; forming a protective film on the workpiece through an atomic layer deposition method, the protective film including a first region extending along a side wall surface of the mask and a second region extending over the ruthenium film; and etching the protective film so as to remove the second region while leaving the first region. The etching the ruthenium film includes a first step of etching the ruthenium film through a plasma processing using an oxygen-containing gas, and a second step of etching the ruthenium film through a plasma processing using a chlorine-containing gas. The first step and the second step are alternately performed.Type: GrantFiled: April 4, 2019Date of Patent: June 29, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Yu Nagatomo, Takahiko Kato
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Patent number: 10685848Abstract: In a method of an embodiment, a tungsten film is formed on a workpiece. The workpiece includes an underlying film and a mask provided on the underlying film. The tungsten film has a first region extending along the side wall surface of the mask that defines an opening, and a second region extending on the underlying film. Subsequently, the tungsten film is plasma-etched while leaving the first region. In forming the tungsten film, a precursor gas containing tungsten is supplied to the workpiece. Then, plasma of hydrogen gas is generated in order to supply hydrogen active species to the precursor on the workpiece.Type: GrantFiled: September 11, 2018Date of Patent: June 16, 2020Assignee: TOKYO ELECTON LIMITEDInventors: Yu Nagatomo, Yoshihide Kihara
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Patent number: 10566209Abstract: An etching method can protect a mask with a material having higher etching resistance to a silicon-containing film. The etching method is performed in a state that a processing target object is placed within a chamber main body. The etching method includes forming a tungsten film on the processing target object and etching the silicon-containing film of the processing target object. The forming of the tungsten film includes supplying a gaseous tungsten-containing precursor onto the processing target object; and generating plasma of a hydrogen gas to supply active species of hydrogen to the precursor on the processing target object. In the etching of the silicon-containing film, plasma of a processing gas containing fluorine, hydrogen and carbon is generated within the chamber main body.Type: GrantFiled: August 31, 2018Date of Patent: February 18, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Yu Nagatomo, Yoshihide Kihara
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Publication number: 20190311915Abstract: A method of processing a workpiece includes: forming a ruthenium film on the workpiece and disposing a mask on the ruthenium film; etching the ruthenium film through a plasma processing; forming a protective film on the workpiece through an atomic layer deposition method, the protective film including a first region extending along a side wall surface of the mask and a second region extending over the ruthenium film; and etching the protective film so as to remove the second region while leaving the first region. The etching the ruthenium film includes a first step of etching the ruthenium film through a plasma processing using an oxygen-containing gas, and a second step of etching the ruthenium film through a plasma processing using a chlorine-containing gas. The first step and the second step are alternately performed.Type: ApplicationFiled: April 4, 2019Publication date: October 10, 2019Inventors: Yu Nagatomo, Takahiko Kato
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Publication number: 20190080929Abstract: In a method of an embodiment, a tungsten film is formed on a workpiece. The workpiece includes an underlying film and a mask provided on the underlying film. The tungsten film has a first region extending along the side wall surface of the mask that defines an opening, and a second region extending on the underlying film. Subsequently, the tungsten film is plasma-etched while leaving the first region. In forming the tungsten film, a precursor gas containing tungsten is supplied to the workpiece. Then, plasma of hydrogen gas is generated in order to supply hydrogen active species to the precursor on the workpiece.Type: ApplicationFiled: September 11, 2018Publication date: March 14, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Yu NAGATOMO, Yoshihide KIHARA
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Publication number: 20190074191Abstract: An etching method can protect a mask with a material having higher etching resistance to a silicon-containing film. The etching method is performed in a state that a processing target object is placed within a chamber main body. The etching method includes forming a tungsten film on the processing target object and etching the silicon-containing film of the processing target object. The forming of the tungsten film includes supplying a gaseous tungsten-containing precursor onto the processing target object; and generating plasma of a hydrogen gas to supply active species of hydrogen to the precursor on the processing target object. In the etching of the silicon-containing film, plasma of a processing gas containing fluorine, hydrogen and carbon is generated within the chamber main body.Type: ApplicationFiled: August 31, 2018Publication date: March 7, 2019Inventors: Yu Nagatomo, Yoshihide Kihara
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Patent number: 9786512Abstract: Provided is an etching method for simultaneously etching first and second regions of a workpiece. The first region has a multilayered film configured by alternately laminating a silicon oxide film and a silicon nitride film and a second region has a silicon oxide film having a film thickness that is larger than that of the silicon oxide film in the first region. A mask is provided on the workpiece to at least partially expose each of the first and second regions. In the etching method, plasma of a first processing gas containing fluorocarbon gas, hydrofluorocarbon gas, and oxygen gas is generated within a processing container of a plasma processing apparatus. Subsequently, plasma of a second processing gas containing fluorocarbon gas, hydrofluorocarbon gas, oxygen gas, and a halogen-containing gas is generated within the processing container. Subsequently, plasma of a third processing gas containing oxygen gas is generated within the processing container.Type: GrantFiled: April 5, 2016Date of Patent: October 10, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Yu Nagatomo, Ryuuu Ishita, Daisuke Tamura, Kousuke Koiwa
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Patent number: 9779961Abstract: Disclosed is a method for etching a first region including a multi-layer film formed by providing silicon oxide films and silicon nitride films alternately, and a second region having a single silicon oxide film. The etching method includes: providing a processing target object including a mask provided on the first region and the second region within a processing container of a plasma processing apparatus; generating plasma of a first processing gas including a hydrofluorocarbon gas within the processing container that accommodates the processing target object; and generating plasma of a second processing gas including a fluorocarbon gas within the processing container that accommodates the processing target object. The step of generating the plasma of the first processing gas and the step of generating the plasma of the second processing gas are alternately repeated.Type: GrantFiled: August 14, 2015Date of Patent: October 3, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Yusuke Saitoh, Yu Nagatomo, Hayato Hishinuma, Wataru Takayama, Sho Tominaga, Yuki Kaneko
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Publication number: 20160293440Abstract: Provided is an etching method for simultaneously etching first and second regions of a workpiece. The first region has a multilayered film configured by alternately laminating a silicon oxide film and a silicon nitride film and a second region has a silicon oxide film having a film thickness that is larger than that of the silicon oxide film in the first region. A mask is provided on the workpiece to at least partially expose each of the first and second regions. In the etching method, plasma of a first processing gas containing fluorocarbon gas, hydrofluorocarbon gas, and oxygen gas is generated within a processing container of a plasma processing apparatus. Subsequently, plasma of a second processing gas containing fluorocarbon gas, hydrofluorocarbon gas, oxygen gas, and a halogen-containing gas is generated within the processing container. Subsequently, plasma of a third processing gas containing oxygen gas is generated within the processing container.Type: ApplicationFiled: April 5, 2016Publication date: October 6, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Yu NAGATOMO, Ryuuu ISHITA, Daisuke TAMURA, Kousuke KOIWA
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Publication number: 20160064245Abstract: Disclosed is a method for etching a first region including a multi-layer film formed by providing silicon oxide films and silicon nitride films alternately, and a second region having a single silicon oxide film. The etching method includes: providing a processing target object including a mask provided on the first region and the second region within a processing container of a plasma processing apparatus; generating plasma of a first processing gas including a hydrofluorocarbon gas within the processing container that accommodates the processing target object; and generating plasma of a second processing gas including a fluorocarbon gas within the processing container that accommodates the processing target object. The step of generating the plasma of the first processing gas and the step of generating the plasma of the second processing gas are alternately repeated.Type: ApplicationFiled: August 14, 2015Publication date: March 3, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Yusuke SAITOH, Yu NAGATOMO, Hayato HISHINUMA, Wataru TAKAYAMA, Sho TOMINAGA, Yuki KANEKO