Abstract: An information processing apparatus includes an input interface that accepts a parking reservation for a vehicle for which parking is desired, and a controller that confirms, when the vehicle for which parking is desired is a first vehicle whose purpose for parking includes charging, whether there is an opening for reservation of a first parking lot having a charging station, completes acceptance of reservation of the first parking lot for the first vehicle when there is an opening, changes a reservation of the first parking lot for at least one second vehicle, selected based on a predetermined condition from among one or more reservation holding vehicles for which acceptance of reservation of the first parking lot is completed, to a reservation of a second parking lot based on the predetermined condition when there is no opening, and completes acceptance of reservation of the first parking lot for the first vehicle.

Abstract: An information processing apparatus includes a controller configured to acquire questionnaire data including a score for each autonomous driving system installed in each vehicle among a plurality of vehicles operated by autonomous driving along a predetermined operation route, the score being an evaluation index of ride comfort of each vehicle, identify, based on an aggregate result of the questionnaire data, a vehicle from among the plurality of vehicles for which the score is determined to be less than a threshold as a first vehicle, and extract first data to be used in analyzing ride comfort from first vehicle information acquired by a first autonomous driving system, which is an autonomous driving system installed in the first vehicle.

Abstract: An operation planning system that creates an operation plan of a vehicle with a rechargeable battery as a travel energy source includes: a reception unit configured to receive request information including a departure location and a destination from a user; and an operation determining unit configured to determine an operation plan in response to the request information. The operation determining unit is configured to derive a state of charge shortage by which there is a shortage when the vehicle travels in an operation section based on the state of charge of the vehicle and to create the operation plan by allocating a vehicle, which is able to be charged with the derived state of charge shortage until an operation of the vehicle starts, to the operation section.

Abstract: A method performed by an information processing apparatus, the method includes, for each of a plurality of vehicles for which charging in a target time period has been applied for, acquiring vehicle information including predicted remaining SOC to be remaining at a start of the target time period and/or predicted consumed SOC to be consumed in a vehicle use period after an end of the target time period, determining, based on the vehicle information, whether each of the plurality of vehicles is a target for charging in the target time period, and determining a charging plan to charge a vehicle being determined to be eligible for charging, among the plurality of vehicles, in the target time period.

Abstract: An information processing apparatus includes a controller that creates an electrical energy consumption map, for an autonomous vehicle, indicating electrical energy consumption of links in an operation route defined by an operation plan, calculates, based on the map, a first predicted value of total electrical energy consumption required for traveling the operation route, and compares the total electrical energy consumption indicated by the first predicted value with a SOC prior to operation of the vehicle, and when the SOC prior to operation does not satisfy the total electrical energy consumption, extracts links satisfying a predetermined condition as candidate links for switching to a manual driving section from among links designated as an autonomous driving section and changes the operation plan so that the SOC prior to operation satisfies the total electrical energy consumption by switching at least one of the extracted candidate links to the manual driving section.

Abstract: An energy consumption estimation device includes a reception unit configured to receive, from a user, request information including a departure point and a destination, a route derivation unit configured to derive a plurality of travel routes based on the departure point and the destination included in the request information, an acquisition unit configured to acquire section energy consumption in a case where a vehicle travels on a road section, which is derived based on information on vehicle speed and information on road undulations, and an estimation unit configured to respectively estimate energy consumption of the vehicle in a case where the vehicle travels on the derived travel routes by adding section energy consumption for road sections included in the travel route.

Abstract: A fluffy and voluminous artificial hair and a method for producing the same are provided. Artificial hair including a fiber cord with one or more fiber bundles braided or spirally wound has a configuration in which the fiber bundle is a bundle of a plurality of fibers including a first fiber and a second fiber. A cross section orthogonal to a longitudinal direction of the fiber bundle has a core and a shell enclosing the core. The core has a blend of the first fiber and the second fiber. The shell consists of the second fiber. A total area of voids in the shell on the cross section is larger than a total area of voids in the core on the cross section.

Abstract: A radiation detection module includes an active matrix substrate and a scintillator. The active matrix substrate includes a support substrate including a first main surface, the first main surface including a first region and a second region surrounding the first region, and a plurality of pixels one-dimensionally or two-dimensionally arrayed in the first region of the first main surface, the plurality of pixels each of which includes a switching element and a photoelectric conversion element electrically connected to the switching element. The scintillator covers the photoelectric conversion elements of the plurality of pixels. A thickness of the support substrate in the first region is smaller than a thickness in the second region.

Abstract: The invention includes a surface material (21) layered on both surfaces of a honeycomb core (11). The surface material (21) comprises a surface material member (27), which is a porous sheet (25) layered on a carbon fiber body (23), impregnated with a thermosetting resin which is then cured. Thermosetting resin that has exuded from the porous sheet (25) due to the honeycomb core (11) biting into the resin porous sheet (25) is cured at the position where the porous sheet (25) abuts the honeycomb core (11).

Abstract: A silicon carbide epitaxial substrate includes a silicon carbide single-crystal substrate of one conductivity type, a first silicon carbide layer of the above-mentioned one conductivity type, a second silicon carbide layer of the above-mentioned one conductivity type, and a third silicon carbide layer of the above-mentioned one conductivity type. The silicon carbide single-crystal substrate has first impurity concentration. The first silicon carbide layer is provided on the silicon carbide single-crystal substrate, and has second impurity concentration that is lower than the first impurity concentration. The second silicon carbide layer is provided on the first silicon carbide layer, and has third impurity concentration that is higher than the first impurity concentration. The third silicon carbide layer is provided on the second silicon carbide layer, and has fourth impurity concentration that is lower than the second impurity concentration.

Abstract: Provided are an X-ray imaging panel capable of suppressing a leak current of a photoelectric conversion layer while reducing the number of steps for manufacturing the imaging panel, and a method for manufacturing the same. An imaging panel 1 generates an image based on scintillation light obtained from X-rays passing through a subject. The imaging panel 1 is provided with a thin film transistor 13, passivation films 103 and 104 covering the thin film transistor 13, a photoelectric conversion layer 15 converting scintillation light into a charge, an upper electrode 16, and a lower electrode 14 connected to the thin film transistor 13, on a substrate 101. End portions of the lower electrode 14 are disposed on an inner side than the end portions of the photoelectric conversion layer 15. The lower electrode 14 and the thin film transistor 13 are connected to each other via a contact hole CH1 formed in the passivation films 103 and 104, in a region in which the photoelectric conversion layer 15 is provided.

Abstract: An epitaxial substrate includes a single-crystal substrate of silicon carbide, and an epitaxial layer of silicon carbide disposed on the single-crystal substrate. The epitaxial layer includes a first epitaxial layer disposed on the single-crystal substrate, a second epitaxial layer disposed on the first epitaxial layer, and a third epitaxial layer disposed on the second epitaxial layer. The first epitaxial layer has a basal-plane-dislocation conversion rate of less than 95%. The second epitaxial layer has a basal-plane-dislocation conversion rate of more than 98%.

Abstract: A silicon carbide epitaxial substrate includes a silicon carbide single-crystal substrate of one conductivity type, a first silicon carbide layer of the above-mentioned one conductivity type, a second silicon carbide layer of the above-mentioned one conductivity type, and a third silicon carbide layer of the above-mentioned one conductivity type. The silicon carbide single-crystal substrate has first impurity concentration. The first silicon carbide layer is provided on the silicon carbide single-crystal substrate, and has second impurity concentration that is lower than the first impurity concentration. The second silicon carbide layer is provided on the first silicon carbide layer, and has third impurity concentration that is higher than the first impurity concentration. The third silicon carbide layer is provided on the second silicon carbide layer, and has fourth impurity concentration that is lower than the second impurity concentration.

Abstract: A silicon carbide epitaxial substrate includes a silicon carbide single-crystal substrate of one conductivity type, a first silicon carbide layer of the above-mentioned one conductivity type, a second silicon carbide layer of the above-mentioned one conductivity type, and a third silicon carbide layer of the above-mentioned one conductivity type. The silicon carbide single-crystal substrate has first impurity concentration. The first silicon carbide layer is provided on the silicon carbide single-crystal substrate, and has second impurity concentration that is lower than the first impurity concentration. The second silicon carbide layer is provided on the first silicon carbide layer, and has third impurity concentration that is higher than the first impurity concentration. The third silicon carbide layer is provided on the second silicon carbide layer, and has fourth impurity concentration that is lower than the second impurity concentration.

Abstract: A silicon carbide epitaxial substrate includes a silicon carbide single-crystal substrate of one conductivity type, a first silicon carbide layer of the above-mentioned one conductivity type, a second silicon carbide layer of the above-mentioned one conductivity type, and a third silicon carbide layer of the above-mentioned one conductivity type. The silicon carbide single-crystal substrate has first impurity concentration. The first silicon carbide layer is provided on the silicon carbide single-crystal substrate, and has second impurity concentration that is lower than the first impurity concentration. The second silicon carbide layer is provided on the first silicon carbide layer, and has third impurity concentration that is higher than the first impurity concentration. The third silicon carbide layer is provided on the second silicon carbide layer, and has fourth impurity concentration that is lower than the second impurity concentration.

Abstract: A silicon carbide epitaxial substrate includes a silicon carbide single-crystal substrate of one conductivity type, a first silicon carbide layer of the above-mentioned one conductivity type, a second silicon carbide layer of the above-mentioned one conductivity type, and a third silicon carbide layer of the above-mentioned one conductivity type. The silicon carbide single-crystal substrate has first impurity concentration. The first silicon carbide layer is provided on the silicon carbide single-crystal substrate, and has second impurity concentration that is lower than the first impurity concentration. The second silicon carbide layer is provided on the first silicon carbide layer, and has third impurity concentration that is higher than the first impurity concentration. The third silicon carbide layer is provided on the second silicon carbide layer, and has fourth impurity concentration that is lower than the second impurity concentration.

Abstract: The purpose of the present invention is to more quickly and easily measure the shape of an object to be measured.

Abstract: The invention provides a technique inhibiting entry of moisture to an active matrix substrate included in an X-ray imaging device. An active matrix substrate includes, in each of the pixels, a photoelectric conversion element including a pair of electrodes and a semiconductor layer provided between the pair of electrodes, a first flattening film configured as an organic resin film and covering the photoelectric conversion element, and a first inorganic insulating film covering the first flattening film. The first flattening film and the first inorganic insulating film are provided to extend outside the pixel region. Outside the pixel region, the first flattening film is covered with the first inorganic insulating film to prevent exposure of the first flattening film.

Abstract: A silicon carbide epitaxial substrate includes a silicon carbide single-crystal substrate of one conductivity type, a first silicon carbide layer of the above-mentioned one conductivity type, a second silicon carbide layer of the above-mentioned one conductivity type, and a third silicon carbide layer of the above-mentioned one conductivity type. The silicon carbide single-crystal substrate has first impurity concentration. The first silicon carbide layer is provided on the silicon carbide single-crystal substrate, and has second impurity concentration that is lower than the first impurity concentration. The second silicon carbide layer is provided on the first silicon carbide layer, and has third impurity concentration that is higher than the first impurity concentration. The third silicon carbide layer is provided on the second silicon carbide layer, and has fourth impurity concentration that is lower than the second impurity concentration.

Abstract: An electrophotographic photoreceptor includes a conductive substrate and a single-layer-type photosensitive layer on the conductive substrate. The single-layer-type photosensitive layer contains a binder resin, a charge generating material, an electron transporting material, and two hole transporting materials having different redox potentials. The two hole transporting materials are a hole transporting material A and a hole transporting material B that has a redox potential lower than that of the hole transporting material A. The ratio A/B of a weight of the hole transporting material A to a weight of the hole transporting material B is about 12/1 or more and about 36/1 or less.