Abstract: A test pattern structure includes a substrate, a first layer formed over the substrate and including a plurality of box-shaped portions, and a second layer formed over the first layer and including a line portion that continuously extends across centers of the box-shaped portions.

Abstract: A semiconductor structure is provided. The semiconductor structure comprises a doped substrate, a gate structure, a source, a drain and a field doped region. The source and the drain are in the doped substrate on opposing sides of the gate structure respectively. The field doped region has a conductivity type opposite to a conductivity type of the source and the drain. The field doped region is extended from the source to be beyond a first gate sidewall of the gate structure but not reach a second gate sidewall of the gate structure opposing to the first gate sidewall.

Abstract: A semiconductor structure is provided. The semiconductor structure comprises a doped substrate, a gate structure, a source, a drain and a field doped region. The source and the drain are in the doped substrate on opposing sides of the gate structure respectively. The field doped region has a conductivity type opposite to a conductivity type of the source and the drain. The field doped region is extended from the source to be beyond a first gate sidewall of the gate structure but not reach a second gate sidewall of the gate structure opposing to the first gate sidewall.