Patents by Inventor Yu P. Han

Yu P. Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-performance punchthrough implant method for MOS/VLSI
    Patent number: 5444008
    Abstract: A method of making high performance MOSFETs uses image reversal lithography to make punchthrough implants.
    Type: Grant
    Filed: September 24, 1993
    Date of Patent: August 22, 1995
    Assignee: VLSI Technology, Inc.
    Inventors: Yu P. Han, Samuel J. S. Nagalingam
  • MOSFET with gate-penetrating halo implant
    Patent number: 5395773
    Abstract: After gates are patterned in a submicron CMOS process, a halo implant is performed with sufficient energy that the halo implant penetrates the gate structures to below the transistor channel regions. Where the substrate is not masked by gate materal, the halo implant penetrates below drain and source regions. During diffusion, this halo limits lateral diffusion of the source/drain dopants. The resulting transistor exhibits enhanced breakdown voltage characteristics during both on and off conditions.
    Type: Grant
    Filed: March 31, 1994
    Date of Patent: March 7, 1995
    Assignee: VLSI Technology, Inc.
    Inventors: K. S. Ravindhran, Yu P. Han, Ravi Jhota, Walter D. Parmantie
  • Latid implants for increasing the effective width of transistor elements in a semiconductor device
    Patent number: 5344787
    Abstract: The diffusion of P-type channel-stop implants into regions where P-type channels are to be formed which will connect N-type source and drain regions of a transistor element on a P-type substrate is effectively compensated for through angled implantation of an N-type dopant material into these regions. Angle implantation is performed by tilting and rotating the wafer in the presence of an N-type ion beam.
    Type: Grant
    Filed: September 24, 1993
    Date of Patent: September 6, 1994
    Assignee: VLSI Technology, Inc.
    Inventors: Samuel J. S. Nagalingam, Yu P. Han, Ravi Jhota