Abstract: A method for backside grinding a bumped wafer is disclosed. A wafer has a plurality of bumps formed on the active surface thereof. Prior to grinding the back surface of the wafer, a hot-melt adhesive layer is formed on the active surface of the wafer so as to be adhered to the active surface and cover the bumps. Also a grinding film is attached to the hot-melt adhesive layer. After grinding the back surface of the wafer, the grinding film is removed but the hot-melt adhesive layer is remained on the wafer for the following wafer-dicing step.

Abstract: The present invention relates to a laser-marking method for a wafer. The method of the invention comprises the steps of: (a) providing a wafer, the wafer having a first surface and a second surface, and a glue layer disposed on the first surface; (b) attaching the glue layer under a first film, the first film installed on a frame; and (c) projecting a laser light on the second surface of the wafer to mark the wafer. By utilizing the frame, the supporting force can be larger and orientation of the laser can be improved so as to improve the precision for marking the wafer and improve the quality of products.

Abstract: A method for forming an underfill layer on a bumped wafer is disclosed. A film is provided wherein the film includes a base layer, a removable layer and the underfill layer. The film is disposed on a bump wafer and then pressing the film under heating is performed to have the bumps of the wafer embedded in the underfill layer. Then, the removable layer with base film attached thereto is removed, so the underfill layer well encloses the bumps of the wafer and is easily separated from the base film layer and the removable layer without damaging the bumps formed on the wafer.

Abstract: A manufacturing method of forming an encapsulation layer on a back surface of a wafer, the method comprising the steps of: providing the wafer having the back surface and an active surface opposing to the back surface; providing an encapsulation disposed only on the back surface of the wafer, and not disposing the encapsulation over the active surface of the wafer; providing a mold having a mold surface disposed over the encapsulation; heating the mold and moving the mold surface to press the encapsulation simultaneously so as to have the encapsulation distributed over the back surface of the wafer to form the encapsulation layer on the back surface of the wafer; and singulating the wafer into a plurality of chips, wherein the encapsulation layer is formed on a back surface of each chip, and is not formed on a side surface of each chip.

Abstract: A method for forming an underfill layer on a bumped wafer is disclosed. A film is provided wherein the film includes a base layer, a removable layer and the underfill layer. The film is disposed on a bump wafer and then pressing the film under heating is performed to have the bumps of the wafer embedded in the underfill layer. Then, the removable layer with base film attached thereto is removed, so the underfill layer well encloses the bumps of the wafer and is easily separated from the base film layer and the removable layer without damaging the bumps formed on the wafer.

Abstract: A method for backside grinding a bumped wafer is disclosed. A wafer has a plurality of bumps formed on the active surface thereof. Prior to grinding the back surface of the wafer, a hot-melt adhesive layer is formed on the active surface of the wafer so as to be adhered to the active surface and cover the bumps. Also a grinding film is attached to the hot-melt adhesive layer. After grinding the back surface of the wafer, the grinding film is removed but the hot-melt adhesive layer is remained on the wafer for the following wafer-dicing step.

Abstract: A manufacturing method of forming an encapsulation layer on a back surface of a wafer mainly comprises the following steps. Firstly, there is provided a wafer having an active surface and a back surface, wherein the active surface has a plurality of bumps formed thereon. Next, an encapsulation is provided on the back surface of the wafer and a mold is provided to have a mold surface of the mold disposed over the back surface. Afterwards, the mold surface is heated and moved to press the encapsulation simultaneously so as to have the encapsulation entirely distributed over the back surface of the wafer to form the encapsulation layer, with a flat surface, covering the back surface of the wafer.

Abstract: A chip scale package includes a plurality of terminals for making external electrical connections and a chip. The chip has a plurality of bonding pads on an active surface thereof, and the bonding pads of the chip are electrically connected to the terminals. The backside surface of the chip is exposed from a surface of the package. The present invention is characterized by having an ink mark on the backside surface of the chip. The present invention further provides a method for making the chip scale package at the wafer level.