Patents by Inventor Yu Peng Lin

Yu Peng Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250096470
    Abstract: An electronic device includes a casing, an antenna, and a connector. The casing includes a metal layer and a first slot and a second slot located on the metal layer. The metal layer includes a metal connecting segment, a first region, and a second region. The metal connecting segment is located between the first slot and the second slot, and the first region and the second region are separated by the first slot, the second slot, and the metal connecting segment. The antenna is connected to the first region, and the antenna is adapted to resonate at a frequency band. The connector is connected to the second region.
    Type: Application
    Filed: July 2, 2024
    Publication date: March 20, 2025
    Applicant: PEGATRON CORPORATION
    Inventors: Chang-Hsun Wu, Ming-Huang Chen, Yu-Peng Lin, Hung-Cheng Tsai, Kuo-Yung Chiu, Hsuan-Chi Lin, Chao-Hsu Wu
  • Patent number: 7973293
    Abstract: A method comprises supplying a dopant gas in an arc chamber of an ion source. A dilutant is supplied to dilute the dopant gas. The dilutant comprises about 98.5 wt. % xenon and about 1.5 wt. % hydrogen. An ion beam is generated from the diluted dopant gas using the ion source.
    Type: Grant
    Filed: April 1, 2009
    Date of Patent: July 5, 2011
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Peng Lin, Wei-Ming You, Ruey-Yong Deng, Jiunn-Nan Lin, Sheng-Chien Tung, Pin Chia Su
  • Publication number: 20100176306
    Abstract: A method comprises supplying a dopant gas in an arc chamber of an ion source. A dilutant is supplied to dilute the dopant gas. The dilutant comprises about 98.5 wt. % xenon and about 1.5 wt. % hydrogen. An ion beam is generated from the diluted dopant gas using the ion source.
    Type: Application
    Filed: April 1, 2009
    Publication date: July 15, 2010
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Peng LIN, Wei-Ming YOU, Ruey-Yong DENG, Jiunn-Nan LIN, Sheng-Chien TUNG, Pin Chia SU
  • Patent number: D570651
    Type: Grant
    Filed: December 20, 2007
    Date of Patent: June 10, 2008
    Assignee: Lin-Pak Enterprise Corporation
    Inventor: Yu Peng Lin