Abstract: A semiconductor device for ultra-high voltage (UHV) operation disclosed in the present invention includes a substrate having a normally-on channel, a negative capacitance material layer, an electrode, a source and a drain. The negative capacitance material layer is disposed over the substrate and capable of adjusting the threshold voltage of the semiconductor device so as to transform the normally-on channel into a normally-off channel and change the transistor characteristics of the semiconductor device from a depletion mode to an enhance mode. In addition, the semiconductor device also includes a gate dielectric layer made of high-k material between the negative capacitance material layer, a gate layer between the gate dielectric layer and the negative capacitance material layer and an ion implantation layer in the substrate under the gate. Furthermore, the aforementioned technical features or structures can be formed in a semiconductor device having a gate-recessed structure.

Abstract: A power control apparatus for controlling the output power of a laser module and a method thereof are disclosed. The power control apparatus includes a feedback unit, a digital control unit, and a driving unit. The feedback unit detects the output power of the laser module and generates a corresponding detection signal. The digital control unit receives the detection signal, and compares the detection signal with the operation parameter signal having a temperature compensation effect obtained from the amended parameter table via a looking-up table method so as to output a driving signal to the driving unit. The driving unit drives the laser module according to the driving signal. Thereby, the output power of the laser module is stable and is not affected by the environmental temperature.