Abstract: There are disclosed a temperature sensor and a method for manufacturing the same. The temperature sensor comprises; a sensor unit including an organic light emitting layer including a delayed fluorescent material; a temperature transfer unit located below the sensor unit to transfer an external temperature to the sensor unit; a first electrode located on the sensor unit; a second electrode located below the sensor unit to be spaced apart from the temperature transfer unit; and a light intensity measuring unit located below the second electrode and measuring the intensity of light emitted from the organic light emitting layer. The temperature sensor can measure a temperature by using a change in the intensity of light using delayed fluorescence, thereby providing improved sensitivity.

Abstract: There are disclosed a temperature sensor and a method for manufacturing the same. The temperature sensor comprises; a sensor unit including an organic light emitting layer including a delayed fluorescent material; a temperature transfer unit located below the sensor unit to transfer an external temperature to the sensor unit; a first electrode located on the sensor unit; a second electrode located below the sensor unit to be spaced apart from the temperature transfer unit; and a light intensity measuring unit located below the second electrode and measuring the intensity of light emitted from the organic light emitting layer. The temperature sensor can measure a temperature by using a change in the intensity of light using delayed fluorescence, thereby providing improved sensitivity.

Abstract: The present application relates to a strain expressing the FrsA protein, and a method for producing ethanol using the same. The FrsA of the present application has a high PDC enzyme activity for a pyruvate, which is a substrate, and thus can be used in a process for producing ethanol. In addition, an FrsA mutant having improved stability in a host cell can be more effective in producing ethanol due to the increase in stability when the FrsA mutant is overexpressed together with IIAGlc, compared with when using conventional Zymomonas mobilis-derived PDC.

Abstract: In a method, an isolation layer pattern is formed on a substrate to define first and second active fins. An ARC layer is formed on the isolation layer pattern to at least partially cover sidewalls of the first and second active fins. A level of a top surface of the ARC layer is equal to or less than, and equal to or greater than half of, those of the first and second active fins. A photoresist layer is formed on the first and second active fins and the ARC layer. A portion of the photoresist layer is removed to form a photoresist pattern covering the first active fin and exposing the second active fin. A portion of the ARC layer under the removed portion of the photoresist layer is removed to form an ARC layer pattern. Impurities are implanted into the exposed second active fin to form an impurity region.

Abstract: In a method, an isolation layer pattern is formed on a substrate to define first and second active fins. An ARC layer is formed on the isolation layer pattern to at least partially cover sidewalls of the first and second active fins. A level of a top surface of the ARC layer is equal to or less than, and equal to or greater than half of, those of the first and second active fins. A photoresist layer is formed on the first and second active fins and the ARC layer. A portion of the photoresist layer is removed to form a photoresist pattern covering the first active fin and exposing the second active fin. A portion of the ARC layer under the removed portion of the photoresist layer is removed to form an ARC layer pattern. Impurities are implanted into the exposed second active fin to form an impurity region.

Abstract: The present application relates to a strain expressing the FrsA protein, and a method for producing ethanol using the same. The FrsA of the present application has a high PDC enzyme activity for a pyruvate, which is a substrate, and thus can be used in a process for producing ethanol.

Abstract: A method of manufacturing a layer pattern of a semiconductor device, the method including forming an anti-reflective coating (ARC) layer on an etching object layer such that the ARC layer includes a polymer having an imide group; forming a photoresist pattern on the ARC layer; wet etching portions of the ARC layer exposed by the photoresist pattern to form an ARC layer pattern; and etching the etching object layer using the photoresist pattern as an etch mask to form the layer pattern.

Abstract: A method of manufacturing a layer pattern of a semiconductor device, the method including forming an anti-reflective coating (ARC) layer on an etching object layer such that the ARC layer includes a polymer having an imide group; forming a photoresist pattern on the ARC layer; wet etching portions of the ARC layer exposed by the photoresist pattern to form an ARC layer pattern; and etching the etching object layer using the photoresist pattern as an etch mask to form the layer pattern.