Patents by Inventor Yu-Ren Wang
Yu-Ren Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12046639Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: February 28, 2022Date of Patent: July 23, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 12046640Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: April 17, 2023Date of Patent: July 23, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20240234505Abstract: A semiconductor device includes a fin structure disposed on a substrate, and an epitaxial semiconductor layer disposed over an upper part of the fin structure and having an undercut. The epitaxial semiconductor layer has a right-left symmetric, concave polygonal cross-section.Type: ApplicationFiled: February 6, 2023Publication date: July 11, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hsu Ting, Kuang-Hsiu Chen, Shou-Hung Wu, Shao-Wei Wang, Yu-Ren Wang
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Patent number: 11955519Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: April 17, 2023Date of Patent: April 9, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20240038844Abstract: A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a gate electrode on the p-type semiconductor layer, and then forming a source electrode and a drain electrode adjacent to two sides of the gate electrode. Preferably, the buffer layer further includes a bottom portion having a first carbon concentration and a top portion having a second carbon concentration, in which the second carbon concentration is less than the first carbon concentration and a thickness of the bottom portion is less than a thickness of the top portion.Type: ApplicationFiled: August 26, 2022Publication date: February 1, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chun-Liang Kuo, Yen-Hsing Chen, Yen-Lun Chen, Ruei-Hong Shen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11876122Abstract: A method of forming a semiconductor device. A substrate having a fin structure is provided. A dummy gate is formed on the fin structure. A polymer block is formed adjacent to a corner between the dummy gate and the fin structure. The polymer block is subjected to a nitrogen plasma treatment, thereby forming a nitridation layer in proximity to a sidewall of the dummy gate under the polymer block. After subjecting the polymer block to the nitrogen plasma treatment, a seal layer is formed on the sidewall of the dummy gate and on the polymer block. An epitaxial layer is then grown on a source/drain region of the fin structure. The dummy gate is then replaced with a metal gate.Type: GrantFiled: November 27, 2022Date of Patent: January 16, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chia-Wei Chang, Chia-Ming Kuo, Po-Jen Chuang, Fu-Jung Chuang, Shao-Wei Wang, Yu-Ren Wang, Chia-Yuan Chang
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Publication number: 20230386939Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion, and more than two gate structures on the SDB structure. Preferably, the more than two gate structures include a first gate structure, a second gate structure, a third gate structure, and a fourth gate structure disposed on the SDB structure.Type: ApplicationFiled: August 14, 2023Publication date: November 30, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Fu-Jung Chuang, Po-Jen Chuang, Yu-Ren Wang, Chi-Mao Hsu, Chia-Ming Kuo, Guan-Wei Huang, Chun-Hsien Lin
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Publication number: 20230352587Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure and an epitaxial structure. The gate structure is disposed on the substrate, and the epitaxial structure is disposed in the substrate, at one side of the gate structure. The epitaxial structure includes a portion being protruded from a top surface of the substrate, and the portion includes a discontinuous sidewall, with a distance between a turning point of the discontinuous sidewalls and the gate structure being a greatest distance between the epitaxial structure and the gate structure.Type: ApplicationFiled: July 4, 2023Publication date: November 2, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Kuang-Hsiu Chen, Sung-Yuan Tsai, Chi-Hsuan Tang, Chun-Wei Yu, Yu-Ren Wang
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Patent number: 11791413Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, a gate structure extending on the fin in a second direction, and a seal layer located on the sidewall of the gate structure. A first peak carbon concentration is disposed in the seal layer. A first spacer layer is located on the seal layer. A second peak carbon concentration is disposed in the first spacer layer. A second spacer layer is located on the first spacer layer.Type: GrantFiled: August 2, 2021Date of Patent: October 17, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Shi-You Liu, Shih-Cheng Chen, Chia-Wei Chang, Chia-Ming Kuo, Tsai-Yu Wen, Yu-Ren Wang
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Patent number: 11791219Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a fin-shaped structure thereon, forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion, and then forming more than one gate structures such as a first gate structure and a second gate structure on the SDB structure. Preferably, each of the first gate structure and the second gate structure overlaps the fin-shaped structure and the SDB structure.Type: GrantFiled: November 7, 2022Date of Patent: October 17, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Fu-Jung Chuang, Po-Jen Chuang, Yu-Ren Wang, Chi-Mao Hsu, Chia-Ming Kuo, Guan-Wei Huang, Chun-Hsien Lin
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Publication number: 20230268397Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: ApplicationFiled: April 17, 2023Publication date: August 24, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11735661Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure and an epitaxial structure. The gate structure is disposed on the substrate, and the epitaxial structure is disposed in the substrate, at one side of the gate structure. The epitaxial structure includes a portion being protruded from a top surface of the substrate, and the portion includes a discontinuous sidewall, with a distance between a turning point of the discontinuous sidewalls and the gate structure being a greatest distance between the epitaxial structure and the gate structure.Type: GrantFiled: May 26, 2021Date of Patent: August 22, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuang-Hsiu Chen, Sung-Yuan Tsai, Chi-Hsuan Tang, Chun-Wei Yu, Yu-Ren Wang
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Publication number: 20230253457Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: ApplicationFiled: April 17, 2023Publication date: August 10, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11695067Abstract: A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.Type: GrantFiled: September 21, 2022Date of Patent: July 4, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yen-Hsing Chen, Yu-Ming Hsu, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20230207643Abstract: A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer and includes a sunken surface, so as to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.Type: ApplicationFiled: February 23, 2023Publication date: June 29, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11664426Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: March 3, 2022Date of Patent: May 30, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11616135Abstract: A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.Type: GrantFiled: April 8, 2020Date of Patent: March 28, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20230091153Abstract: A method of forming a semiconductor device. A substrate having a fin structure is provided. A dummy gate is formed on the fin structure. A polymer block is formed adjacent to a corner between the dummy gate and the fin structure. The polymer block is subjected to a nitrogen plasma treatment, thereby forming a nitridation layer in proximity to a sidewall of the dummy gate under the polymer block. After subjecting the polymer block to the nitrogen plasma treatment, a seal layer is formed on the sidewall of the dummy gate and on the polymer block. An epitaxial layer is then grown on a source/drain region of the fin structure. The dummy gate is then replaced with a metal gate.Type: ApplicationFiled: November 27, 2022Publication date: March 23, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chia-Wei Chang, Chia-Ming Kuo, Po-Jen Chuang, Fu-Jung Chuang, Shao-Wei Wang, Yu-Ren Wang, Chia-Yuan Chang
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Publication number: 20230064346Abstract: A method of separating an edge portion from a glass substrate includes applying a scoring tool of a scoring apparatus to a glass substrate to cause the scoring tool to score the glass substrate along a score line as the glass substrate moves relative to the scoring apparatus and applying a breaker bar of a breaker apparatus to the glass substrate as the glass substrate moves relative to the breaker bar to separate an edge portion from the glass substrate along the score line.Type: ApplicationFiled: January 19, 2021Publication date: March 2, 2023Inventors: Jared David Beckwith, Nils Paul Fornell, Misha Andre Gerschel, Tae-hun Han, Suk-Ju Kim, Yong-shin Kim, Younghoo Kim, Ian Kirk, Craig Marshall Phenes, Yu-Ren Wang
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Publication number: 20230058811Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a fin-shaped structure thereon, forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion, and then forming more than one gate structures such as a first gate structure and a second gate structure on the SDB structure. Preferably, each of the first gate structure and the second gate structure overlaps the fin-shaped structure and the SDB structure.Type: ApplicationFiled: November 7, 2022Publication date: February 23, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Fu-Jung Chuang, Po-Jen Chuang, Yu-Ren Wang, Chi-Mao Hsu, Chia-Ming Kuo, Guan-Wei Huang, Chun-Hsien Lin