Patents by Inventor Yu-Ren Wang

Yu-Ren Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11563088
    Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
    Type: Grant
    Filed: December 10, 2019
    Date of Patent: January 24, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
  • Publication number: 20230020271
    Abstract: A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.
    Type: Application
    Filed: September 21, 2022
    Publication date: January 19, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Yen-Hsing Chen, Yu-Ming Hsu, Tsung-Mu Yang, Yu-Ren Wang
  • Patent number: 11557666
    Abstract: A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.
    Type: Grant
    Filed: November 22, 2020
    Date of Patent: January 17, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yen-Hsing Chen, Yu-Ming Hsu, Tsung-Mu Yang, Yu-Ren Wang
  • Publication number: 20230005451
    Abstract: A control system includes a plurality of driving circuits coupled in series, which include a first driving circuit and a second driving circuit. The first driving circuit includes a first receiver, a first transmitter and a first flag signal selector. The first transmitter is coupled to the first receiver, and the first flag signal selector is coupled between the first receiver and the first transmitter. The second driving circuit, coupled to the first driving circuit, includes a second receiver, a second transmitter and a second flag signal selector. The second transmitter is coupled to the second receiver, and the second flag signal selector is coupled between the second receiver and the second transmitter.
    Type: Application
    Filed: September 14, 2022
    Publication date: January 5, 2023
    Applicant: NOVATEK Microelectronics Corp.
    Inventors: Che-Wei Yeh, Keko-Chun Liang, Yu-Hsiang Wang, Yong-Ren Fang, Yi-Chuan Liu, Yi-Yang Tsai, Po-Hsiang Fang
  • Patent number: 11545557
    Abstract: A semiconductor device includes substrate having a fin structure thereon, a gate structure overlying the fin structure, a polymer block at a corner between the gate structure and the fin structure, and a source/drain region on the fin structure. The polymer block includes a nitridation layer in proximity to a sidewall of the gate structure.
    Type: Grant
    Filed: April 7, 2021
    Date of Patent: January 3, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Wei Chang, Chia-Ming Kuo, Po-Jen Chuang, Fu-Jung Chuang, Shao-Wei Wang, Yu-Ren Wang, Chia-Yuan Chang
  • Patent number: 11545081
    Abstract: A LED driving apparatus with clock embedded cascaded LED drivers is introduced, including: a plurality of LED drivers, wherein the first stage LED driver receives an original data signal and outputs a first data signal, the Nth stage LED driver receives a (N?1)th data signal and outputs a Nth data signal. The Nth stage LED driver includes a clock data recovery circuit generating a recovery clock signal and a recovery data signal according to the (N?1)th data signal; and a first transmitter outputting the Nth data signal according to the recovery clock signal and the recovery data signal.
    Type: Grant
    Filed: April 14, 2022
    Date of Patent: January 3, 2023
    Assignee: Novatek Microelectronics Corp.
    Inventors: Che-Wei Yeh, Keko-Chun Liang, Yu-Hsiang Wang, Yong-Ren Fang, Yi-Chuan Liu
  • Patent number: 11545546
    Abstract: In an embodiment, a device includes: a first source/drain region; a second source/drain region; an inter-layer dielectric (ILD) layer over the first source/drain region and the second source/drain region; a first source/drain contact extending through the ILD layer, the first source/drain contact connected to the first source/drain region; a second source/drain contact extending through the ILD layer, the second source/drain contact connected to the second source/drain region; and an isolation feature between the first source/drain contact and the second source/drain contact, the isolation feature including a dielectric liner and a void, the dielectric liner surrounding the void.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: January 3, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Lien Huang, Guan-Ren Wang, Ching-Feng Fu
  • Publication number: 20220416068
    Abstract: A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.
    Type: Application
    Filed: August 29, 2022
    Publication date: December 29, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Ming Hsu, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
  • Patent number: 11532712
    Abstract: A method for making a semiconductor device includes forming a first patterned structure over an interlayer dielectric. The interlayer dielectric overlays a first source/drain structure and a second source/drain structure. The first patterned structure extends along a first lateral direction and a vertical projection of the first patterned structure is located between the first and second source/drain structures along a second lateral direction perpendicular to the first lateral direction. The method includes reducing a width of the first patterned structure that extends along the second lateral direction. The method includes forming, based on the first patterned structure having the reduced width, contact holes that expose the first source/drain structure and the second source/drain structure, respectively.
    Type: Grant
    Filed: February 3, 2021
    Date of Patent: December 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Yu-Lien Huang, Ching-Feng Fu, Guan-Ren Wang, Che-Ming Hsu
  • Patent number: 11527448
    Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a fin-shaped structure thereon, forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion, and then forming more than one gate structures such as a first gate structure and a second gate structure on the SDB structure. Preferably, each of the first gate structure and the second gate structure overlaps the fin-shaped structure and the SDB structure.
    Type: Grant
    Filed: December 27, 2020
    Date of Patent: December 13, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Fu-Jung Chuang, Po-Jen Chuang, Yu-Ren Wang, Chi-Mao Hsu, Chia-Ming Kuo, Guan-Wei Huang, Chun-Hsien Lin
  • Patent number: 11527195
    Abstract: A display control system includes a plurality of driver circuits connected in series. A driver circuit among the plurality of driver circuits includes a receiver, a duty cycle correction circuit and a transmitter. The receiver is configured to receive a first signal from a previous driver circuit among the plurality of driver circuits. The duty cycle correction circuit, coupled to the receiver, is configured to adjust a duty cycle of the first signal to generate a second signal. The transmitter, coupled to the duty cycle correction circuit, is configured to transmit the second signal to a next driver circuit among the plurality of driver circuits.
    Type: Grant
    Filed: April 22, 2021
    Date of Patent: December 13, 2022
    Assignee: NOVATEK Microelectronics Corp.
    Inventors: Che-Wei Yeh, Keko-Chun Liang, Yu-Hsiang Wang, Yong-Ren Fang, Yi-Chuan Liu
  • Patent number: 11520181
    Abstract: A flexible optical element adopting liquid crystals (LCs) as the materials for realizing electrically tunable optics is foldable. A method for manufacturing the flexible element includes patterned photo-polymerization. The LC optics can include a pair of LC layers with orthogonally aligned LC directors for polarizer-free properties, flexible polymeric alignment layers, flexible substrates, and a module for controlling the electric field. The lens power of the LC optics can be changed by controlling the distribution of electric field across the optical zone. Lens power control can be provided using combinations of electrode configurations, drive signals and anchoring strengths in the alignment layers.
    Type: Grant
    Filed: April 20, 2021
    Date of Patent: December 6, 2022
    Assignee: COOPERVISION INTERNATIONAL LIMITED
    Inventors: Hung-Chun Lin, Yu-Jen Wang, Hao-Ren Lo, Yi-Hsin Lin
  • Patent number: 11515165
    Abstract: In an embodiment, a structure includes: a contact etch stop layer (CESL) over a substrate; a fin extending through the CESL; an epitaxial source/drain region in the fin, the epitaxial source/drain region extending through the CESL; a silicide contacting upper facets of the epitaxial source/drain region; a source/drain contact contacting the silicide, lower facets of the epitaxial source/drain region, and a first surface of the CESL; and an inter-layer dielectric (ILD) layer surrounding the source/drain contact, the ILD layer contacting the first surface of the CESL.
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: November 29, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lien Huang, Guan-Ren Wang, Ching-Feng Fu
  • Patent number: 11508818
    Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
    Type: Grant
    Filed: October 21, 2021
    Date of Patent: November 22, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
  • Publication number: 20220367198
    Abstract: In an embodiment, a structure includes: a contact etch stop layer (CESL) over a substrate; a fin extending through the CESL; an epitaxial source/drain region in the fin, the epitaxial source/drain region extending through the CESL; a silicide contacting upper facets of the epitaxial source/drain region; a source/drain contact contacting the silicide, lower facets of the epitaxial source/drain region, and a first surface of the CESL; and an inter-layer dielectric (ILD) layer surrounding the source/drain contact, the ILD layer contacting the first surface of the CESL.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 17, 2022
    Inventors: Yu-Lien Huang, Guan-Ren Wang, Ching-Feng Fu
  • Publication number: 20220359693
    Abstract: A semiconductor device including source/drain contacts extending into source/drain regions, below topmost surfaces of the source/drain regions, and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate; a first channel region over the semiconductor substrate; a first gate stack over the semiconductor substrate and surrounding four sides of the first channel region; a first epitaxial source/drain region adjacent the first gate stack and the first channel region; and a first source/drain contact coupled to the first epitaxial source/drain region, a bottommost surface of the first source/drain contact extending below a topmost surface of the first channel region.
    Type: Application
    Filed: July 25, 2022
    Publication date: November 10, 2022
    Inventors: Guan-Ren Wang, Yun-Min Chang, Yu-Lien Huang, Ching-Feng Fu
  • Publication number: 20220359210
    Abstract: An embodiment method includes: forming a gate stack over a channel region; growing a source/drain region adjacent the channel region; depositing a first ILD layer over the source/drain region and the gate stack; forming a source/drain contact through the first ILD layer to physically contact the source/drain region; forming a gate contact through the first ILD layer to physically contact the gate stack; performing an etching process to partially expose a first sidewall and a second sidewall, the first sidewall being at a first interface of the source/drain contact and the first ILD layer, the second sidewall being at a second interface of the gate contact and the first ILD layer; forming a first conductive feature physically contacting the first sidewall and a first top surface of the source/drain contact; and forming a second conductive feature physically contacting the second sidewall and a second top surface of the gate contact.
    Type: Application
    Filed: July 21, 2022
    Publication date: November 10, 2022
    Inventors: Yu-Lien Huang, Guan-Ren Wang, Ching-Feng Fu
  • Publication number: 20220359650
    Abstract: In an embodiment, a device includes: a first source/drain region; a second source/drain region; an inter-layer dielectric (ILD) layer over the first source/drain region and the second source/drain region; a first source/drain contact extending through the ILD layer, the first source/drain contact connected to the first source/drain region; a second source/drain contact extending through the ILD layer, the second source/drain contact connected to the second source/drain region; and an isolation feature between the first source/drain contact and the second source/drain contact, the isolation feature including a dielectric liner and a void, the dielectric liner surrounding the void.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 10, 2022
    Inventors: Yu-Lien Huang, Guan-Ren Wang, Ching-Feng Fu
  • Publication number: 20220359745
    Abstract: In an embodiment, a structure includes: a gate stack over a channel region of a substrate; a source/drain region adjacent the channel region; a first inter-layer dielectric (ILD) layer over the source/drain region; a silicide between the first ILD layer and the source/drain region, the silicide contacting a top surface of the source/drain region and a bottom surface of the source/drain region; and a first source/drain contact having a first portion and a second portion, the first portion of the first source/drain contact disposed between the silicide and the first ILD layer, the second portion of the first source/drain contact extending through the first ILD layer and contacting the silicide.
    Type: Application
    Filed: July 25, 2022
    Publication date: November 10, 2022
    Inventors: Yu-Lien Huang, Guan-Ren Wang, Ching-Feng Fu
  • Publication number: 20220344474
    Abstract: A superlattice structure includes a substrate. A first superlattice stack is disposed on the substrate. The first superlattice stack includes a first superlattice layer, a second superlattice layer and a third superlattice layer disposed from bottom to top. Three stress relaxation layers respectively disposed between the first superlattice layer and the second superlattice layer, the second superlattice layer and the third superlattice layer and on the third superlattice layer. Each of the stress relaxation layers includes a group III-V compound layer. The thickness of each of the stress relaxation layers should be greater than a relaxation critical thickness.
    Type: Application
    Filed: May 31, 2021
    Publication date: October 27, 2022
    Inventors: Yu-Ming Hsu, Chun-Liang Kuo, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang