Abstract: A bimodal lithium transition metal oxide based powder mixture comprising a first and a second lithium transition metal oxide based powder. The first powder comprises a material A having a layered crystal structure comprising the elements Li, a transition metal based composition M and oxygen and has a particle size distribution with a span <1.0. The second powder has a monolithic morphology and a general formula Li1+bN?1-bO2, wherein ?0.03?b?0.10, and N?=NixM?yCozEd, wherein 0.30?x?0.92, 0.05?y?0.40, 0.05?z?0.40 and 0?d?0.10, with M? being one or both of Mn or Al, and E being a dopant different from M?. The first powder has an average particle size D50 between 10 and 40 ?m. The second powder has an average particle size D50 between 2 and 4 ?m. The weight ratio of the second powder in the bimodal mixture is between 20 and 60 wt %.

Abstract: A bimodal lithium transition metal oxide based powder mixture comprises a first and a second lithium transition metal oxide based powder. The first powder comprises particles of a material A comprising the elements Li, a transition metal based composition M and oxygen. The first powder has a particle size distribution characterized by a (D90?D10)/D50<1.0. The second powder comprises a material B having single crystal particles, said particles having a general formula Li+bN??bO2, wherein ?0.03?b?0.10, and N?=NixM?yCozEd, wherein 0.30?x?0.92, 0.05?y?0.40, 0.05?z?0.40 and 0?d?0.10, wherein M? is one or both of Mn or Al, and E is a dopant different from M?. The first powder has an average particle size D50 between 10 and 40 ?m. The second powder has a D50 between 2 and 4 ?m. The weight ratio of the second powder in the mixture is between 15 and 60 wt %.

Abstract: A precursor compound for manufacturing a lithium transition metal based oxide powder usable as an active positive electrode material in lithium-ion batteries, the precursor being either one of a metal-bearing M?-hydroxide, -oxyhydroxide or -carbonate, with M?=Ni1-x-y-zMnxCOyAz with x>0, y>0, 0.70?1-x-y-z?0.95 and 0?z<0.1, the precursor comprising having a core comprising a metal-bearing compound M?c and a shell comprising a metal-bearing compound M?s, wherein M?c=Ni1-xc-yc-zcMnxcCOycAzc with 0<xc?0.2, 0<yc?0.2, 0?zc<0.1 and 0.75?1-x-y-z?0.95, and M?s=Ni1-xs-ys-zsMnxsCOysAzs with 0<xs?0.25, 0.75<ys?0.95, 0?zs<0.1 and 0?1-xs-ys-zs?0.10.

Abstract: A positive electrode active material for solid state rechargeable batteries, whereby the positive electrode active material is a powder which comprises Li, NI, and 0, wherein M? consists of Co in a content x superior or equal to 2.0 mol % and inferior or equal to 35.0 mol %, Mn in a content y superior or equal to 0 mol % and inferior or equal to 35.0 mol %, A in a content m superior or equal to 0 mol % and inferior or equal to 5 mol %, whereby A comprises at least one element of the group consisting of: Al, Ba, B, Mg, Nb, Sr, Ti, W, S, Ca, Cr, Zn, V, Y, Si, and Zr, Ni in a content of 100-x-y-m mol %, a first compound which comprises Li2WO4 and a second compound which comprises WO3, whereby the powder is a single-crystalline powder, whereby the positive electrode active material comprises Li in a molar ratio of Li/(Co+Mn+Ni+A) of at least 0.9 and at most 1.1, whereby the positive electrode active material has a tap density which is at least 1.0 gr/cm3 and at most 3.0 g/cm3.

Abstract: A positive electrode active material for lithium-ion liquid electrolyte rechargeable batteries, whereby the positive electrode active material is a powder which comprises Li, M?, and O, wherein M? consists of Co in a content x superior or equal to 2.0 mol % and inferior or equal to 35.0 mol %, Mn in a content y superior or equal to 0 mol % and inferior or equal to 35.0 mol %, A in a content m superior or equal to 0 mol % and inferior or equal to 5 mol %, whereby A comprises at least one element of the group consisting of: Al, Ba, B, Mg, Nb, Sr, Ti, W, S, Ca, Cr, Zn, V, Y, Si, and Zr, Ni in a content of 100-x-y-m mol %, a first compound which comprises Li2WO4 and a second compound which comprises WO3, whereby the powder is a single-crystalline powder, whereby the positive electrode active material comprises Li in a molar ratio of Li/(Co+Mn+Ni+A) of at least 0.9 and at most 1.1.

Abstract: A display device includes a main body configured to have a display module to which an image is output, a bending module located at a center of a back surface of the main body, and a controller. The controller controls the bending module to change a curvature of the display module to any one of a flat mode in which the display module is flat, a first bending mode in which the display module has a first curvature, and a second bending mode in which the display module has a second curvature. The second curvature is a maximum curvature of the display module.

Abstract: Disclosed is a semiconductor device including a substrate including first and second active regions, a device isolation layer on the substrate and defining first and second active patterns, first and second gate electrodes running across the first and second active regions and aligned with each other, first and second source/drain patterns on the first and second active patterns, a first active contact connecting the first and second source/drain patterns to each other, and a gate cutting pattern between the first and second gate electrodes. An upper portion of the first active contact includes first and second upper dielectric patterns. The first active contact has a minimum width at a portion between the first and second upper dielectric patterns. A minimum width of the gate cutting pattern is a second width. A ratio of the first width to the second width is in a range of 0.8 to 1.2.

Abstract: A display device includes a main body configured to have a display module to which an image is output, a bending module located at a center of a back surface of the main body, and a controller. The controller controls the bending module to change a curvature of the display module to any one of a flat mode in which the display module is flat, a first bending mode in which the display module has a first curvature, and a second bending mode in which the display module has a second curvature. The second curvature is a maximum curvature of the display module.

Abstract: A display device includes a main body configured to have a display module to which a user interface is output, a bending module located at a center of a back surface of the main body, and a controller. The controller controls the bending module to change a curvature of the display module to any one of a flat mode in which the display module is flat, a first bending mode in which the display module has a first curvature, and a second bending mode in which the display module has a second curvature, wherein the second curvature is a maximum curvature of the display module. Then, the controller changes at least one of a size and a position of a display region to which the user interface is output, according to whether a mode is the flat mode, the first bending mode, or the second bending mode.

Abstract: A display device includes a main body provided with a display module on which an image is displayed, a bending module located at a center of a rear surface of the main body, and a controller. The controller includes controlling the bending module to change a curvature of the display module to any one of a flat mode in which the display module is flat, a first bending mode in which the display module has a first curvature, and a second bending mode in which the display module has a second curvature. Here, the second curvature is a maximum curvature of the display module. The controller further includes switching the display module to any one of the flat mode, the first bending mode, and the second bending mode based on a distance to a remote controller.

Abstract: A display device includes a main body configured to have a display module to which an image is output, a bending module located at a center of a back surface of the main body, and a controller. The controller controls the bending module to change a curvature of the display module to any one of a flat mode in which the display module is flat, a first bending mode in which the display module has a first curvature, and a second bending mode in which the display module has a second curvature. The second curvature is a maximum curvature of the display module.

Abstract: An integrated circuit device includes: a substrate including a device area and a field area; active regions extending in a first direction in the device area; a first gate structure extending in a second direction intersecting the first direction in the device area and the field area; a second gate structure spaced apart from the first gate structure in the first direction; a first gate contact disposed on the first gate structure in the device area; and a second gate contact disposed on the second gate structure in the field area, wherein the first gate contact and the second gate contact are disposed at a level lower than an upper end of the first gate structure, and wherein a first minimum width of the first gate contact and a second minimum width of the second gate contact are different from each other.

Abstract: Integrated circuit devices may include a fin-type active region extending on a substrate in a first horizontal direction, a gate line extending on the fin-type active region in a second horizontal direction, a source/drain region on the fin-type active region and adjacent to the gate line, and a source/drain contact pattern connected to the source/drain region. The source/drain contact pattern may include a first portion and a second portion, the first portion having a first height, and the second portion having a second height less than the first height. The source/drain contact pattern may include a metal plug in the first and second portions and a conductive barrier film on sidewalls of the metal plug in the first and second portions. A first top surface of the conductive barrier film in the second portion is lower than a top surface of the metal plug in the second portion.

Abstract: A semiconductor device of the disclosure includes an active pattern extending on a substrate in a first direction, a gate structure extending on the active pattern in a second direction intersecting the first direction, a source/drain region disposed on at least one side of the gate structure, a source/drain contact connected to the source/drain region, and a contact insulating layer disposed on the source/drain contact. The contact insulating layer includes at least one air gap. The air gap is disposed on an upper surface of the source/drain contact.

Abstract: A semiconductor device includes first to fourth gate structures sequentially disposed in a first horizontal direction. Each of the first to fourth gate structures includes a gate electrode and a gate capping layer and first to third source/drain regions disposed among the first to fourth gate structures. A first narrow source/drain contact, a first wide source/drain contact, and a second narrow source/drain contact are disposed among the first to fourth gate structures and contact the first to third source/drain regions, respectively. The first to fourth gate structures are disposed with first to third distances there among. The second distance is greater than the first distance and the third distance. A lower end of the first narrow source/drain contact is disposed at a higher level than a lower end of the first wide source/drain contact.

Abstract: The present invention relates to a compound comprising an EZH2 inhibitor and an E3 ligase binder, and a pharmaceutical composition for preventing or treating EZH2-associated disease and a pharmaceutical composition for selective protein degradation containing the same as an active ingredient. Since the compound of the present invention can selectively degrade EZH2, it can be effectively used for the treatment of EZH2-related diseases and cancers, particularly, cancers in which EZH2 is overexpressed, and can be usefully used for the selective degradation of EZH2.

Abstract: An integrated circuit device includes: a first fin-type active region and a second fin-type active region that extend on a substrate in a straight line in a first horizontal direction and are adjacent to each other in the first horizontal direction; a fin isolation region arranged between the first fin-type active region and the second fin-type active region on the substrate and including a fin isolation insulation structure extending in a second horizontal direction perpendicular to the first horizontal direction; and a plurality of gate lines extending on the first fin-type active region in the second horizontal direction, wherein a first gate line that is closest to the fin isolation region from among the plurality of gate lines is inclined to be closer to a center of the fin isolation region in the first horizontal direction from a lowermost surface to an uppermost surface of the first gate line.

Abstract: A biodegradable tobacco fiber and starch-based absorbent article that serves to effectively absorb bodily fluids. The tobacco-based absorbent article includes a plurality of layers: a nonwoven top sheet, an airlaid paper, an absorbent core, a laminated nonwoven back sheet, and optionally, a release paper.

Abstract: Integrated circuit devices may include a fin-type active region, a gate line extending on the fin-type active region, a source/drain region on the fin-type active region and adjacent to the gate line, an interlayer insulating film covering the source/drain region, a source/drain contact hole penetrating the interlayer insulating film toward the source/drain region, a metal plug in the source/drain contact hole, and a conductive barrier film covering a sidewall of the metal plug in the source/drain contact hole. The metal plug includes a lateral expansion portion and a through portion vertically extending from the lateral expansion portion toward the source/drain region. A width of the lateral expansion is greater than a width of the through portion, and a topmost surface of the conductive barrier film is closer than a topmost surface of the metal plug to the substrate.

Abstract: A semiconductor device includes a substrate having PMOSFET and NMOSFET regions spaced apart from each other in a direction, a device isolation layer provided on the substrate that defines first and second active patterns respectively on the PMOSFET and NMOSFET regions, a gate electrode crossing the first and second active patterns, first and second source/drain patterns respectively provided on the first and second active patterns respectively and near the gate electrode, and an active contact extending in the direction and coupled to the first and second source/drain patterns. The active contact includes first and second body portions, which are respectively provided on the first and the second source/drain patterns, and a first protruding portion and a recessed portion, which are provided between the first and second body portions and on the device isolation layer between the PMOSFET and NMOSFET regions. The recessed portion has an upwardly recessed bottom.