Abstract: An object pose estimation system, an execution method thereof and a graphic user interface are provided. The execution method of the object pose estimation system includes the following steps. A feature extraction strategy of a pose estimation unit is determined by a feature extraction strategy neural network model according to a scene point cloud. According to the feature extraction strategy, a model feature is extracted from a 3D model of an object and a scene feature is extracted from the scene point cloud by the pose estimation unit. The model feature is compared with the scene feature by the pose estimation unit to obtain an estimated pose of the object.

Abstract: In a method and an optical time-of-flight sensor for determining distance values d, di by an optical time-of-flight method, an illumination light 40 is emitted which is modulated with a modulation frequency f and a modulation phase q. Reflected light 42 is acquired as an output signal Rx and evaluated by acquisition of a phase shift ? between the illumination light 40 and the reflected light 42, so that an output signal d, di with at least one distance value d is generated. Distance values d, di are determined for a sequence of successive frames, with a plurality of acquisitions being made in each frame in the form of micro-frames ?F1-?F8 with different modulation phases ?. A sequence of modulation phases ?1-?4 of the micro-frames ?F1-?F8 is specified for each frame. In order to achieve a particularly high reliability of the data supplied, the order of the modulation phases ?1-?4 changes. A self-calibration and self-verification take place in an initialization step (60).

Abstract: A modified polyurethane material and a method for manufacturing the same are provided. A dianhydride is added into an aliphatic diisocyanate to form a liquid reactant. A solvent is absent from the liquid reactant. An oligomerization is implemented onto the liquid reactant so as to form an oligomer having a terminal isocyanate group. A polyol and a curative are added into the oligomer having the terminal isocyanate group for a polymerization so as to form the modified polyurethane. Based on a total weight of the modified polyurethane being 100 wt %, a content of a hard segment of the modified polyurethane ranges from 15 wt % to 45 wt %.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a staircase structure disposed over a substrate. The staircase structure includes a plurality of layer stacks, where each layer stack is made of a first material layer over a portion of a second material layer. The staircase structure further includes a plurality of landing pads, where each landing pad is disposed over another portion of the second material layer of a respective layer stack.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a staircase structure disposed over a substrate. The staircase structure includes a plurality of layer stacks, where each layer stack is made of a first material layer over a portion of a second material layer. The staircase structure further includes a plurality of landing pads, where each landing pad is disposed over another portion of the second material layer of a respective layer stack.

Abstract: A memory device includes an alternating layer stack including conductive/dielectric layer pairs stacked in a first direction, a first insulating layer on the alternating layer stack, a thickness of the first insulating layer being larger than a thickness of the dielectric layer, and a channel structure extending through the alternating layer stack and the first insulating layer along the first direction. The channel structure includes an epitaxial layer disposed at a first end of the channel structure away from the first insulating layer, a functional layer on the epitaxial layer and extending along the first direction, a channel layer covering a sidewall of the functional layer and in contact with the epitaxial layer, and a filling structure covering a sidewall of the channel layer.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a staircase structure disposed over a substrate. The staircase structure includes a plurality of layer stacks, where each layer stack is made of a first material layer over a portion of a second material layer. The staircase structure further includes a plurality of landing pads, where each landing pad is disposed over another portion of the second material layer of a respective layer stack.

Abstract: A method for forming a 3D memory device is disclosed. The method includes: forming an alternating dielectric stack on a substrate; forming a plurality of channel holes penetrating the alternating dielectric stack; forming a channel structure in each channel hole; forming a channel column structure on the channel structure in each channel hole; trimming an upper portion of each channel column structure to form a channel plug; and forming a top selective gate cut between neighboring channel plugs.

Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.

Abstract: Methods, system, and apparatus for substrate processing are provided for flowing a gas into a substrate processing chamber housing a substrate clamped to a chuck, wherein the gas is introduced at a location above the substrate; and while the gas is introduced, dechucking the substrate.

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: Provided are a resistive random access memory and a manufacturing method thereof. The resistive random access memory includes a substrate having a pillar protruding from a surface of the substrate, a gate surrounding a part of a side surface of the pillar, a gate dielectric layer, a first electrode, a second electrode, a variable resistance layer, a first doped region and a second doped region. The gate dielectric layer is disposed between the gate and the pillar. The first electrode is disposed on a top surface of the pillar. The second electrode is disposed on the first electrode. The variable resistance layer is disposed between the first electrode and the second electrode. The first doped region is disposed in the pillar below the gate and in a part of the substrate below the pillar. The second doped region is disposed in the pillar between the gate and the first electrode.

Abstract: A training data generation device includes a virtual scene generation unit, an orthographic virtual camera, an object-occlusion determination unit, an object-occlusion determination unit and a perspective virtual camera. The virtual scene generation unit is configured for generating a virtual scene, wherein the virtual scene comprises a plurality of objects. The orthographic virtual camera is configured for capturing a vertical projection image of the virtual scene. The object-occlusion determination unit is configured for labeling an occluded-state of each object according to the vertical projection image. The perspective virtual camera is configured for capturing a perspective projection image of the virtual scene. The training data generation unit is configured for generating a training data of the virtual scene according to the perspective projection image and the occluded-state of each object.

Abstract: Provided are a resistive random access memory and a manufacturing method thereof. The resistive random access memory includes a substrate having a pillar protruding from a surface of the substrate, a gate surrounding a part of a side surface of the pillar, a gate dielectric layer, a first electrode, a second electrode, a variable resistance layer, a first doped region and a second doped region. The gate dielectric layer is disposed between the gate and the pillar. The first electrode is disposed on a top surface of the pillar. The second electrode is disposed on the first electrode. The variable resistance layer is disposed between the first electrode and the second electrode. The first doped region is disposed in the pillar below the gate and in a part of the substrate below the pillar. The second doped region is disposed in the pillar between the gate and the first electrode.

Abstract: A method for forming a semiconductor device structure includes forming alternating first semiconductor layers and second semiconductor layers stacked over a substrate. The method also includes etching the first semiconductor layers and the second semiconductor layers to form a fin structure. The method also includes oxidizing the first semiconductor layers to form first oxidized portions of the first semiconductor layers and oxidizing the second semiconductor layers to form second oxidized portions of the second semiconductor layers. The method also includes removing the oxides over the sidewalls of the second semiconductor layers. After removing the second oxidized portions, an upper layer of the second semiconductor layers is narrower than a lower layer of the second semiconductor layers. The method also includes removing the first semiconductor layers to form a gate opening between the second semiconductor layers. The method also includes forming a gate structure in the gate opening.

Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a staircase structure disposed over a substrate. The staircase structure includes a plurality of layer stacks, where each layer stack is made of a first material layer over a portion of a second material layer. The staircase structure further includes a plurality of landing pads, where each landing pad is disposed over another portion of the second material layer of a respective layer stack.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a staircase structure disposed over a substrate. The staircase structure includes a plurality of layer stacks, where each layer stack is made of a first material layer over a portion of a second material layer. The staircase structure further includes a plurality of landing pads, where each landing pad is disposed over another portion of the second material layer of a respective layer stack.

Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.