Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a plurality of capacitors, and a first supporting layer. The plurality of capacitors are disposed on the substrate. Each of the capacitors extends along a first direction. Each of the plurality of capacitors includes a first capacitor electrode, a second capacitor electrode, and a capacitor dielectric separating the first capacitor electrode from the second capacitor electrode. The first supporting layer is disposed on the substrate. The first supporting layer extends along a second direction different from the first direction. The capacitor dielectric includes a first surface and a second surface which are disposed on two opposite sides along the first direction. The second surface is exposed by the first capacitor electrode. The first supporting layer is disposed between the first surface and the second surface of the capacitor dielectric.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a plurality of capacitors, and a first supporting layer. The plurality of capacitors are disposed on the substrate. Each of the capacitors extends along a first direction. Each of the plurality of capacitors includes a first capacitor electrode, a second capacitor electrode, and a capacitor dielectric separating the first capacitor electrode from the second capacitor electrode. The first supporting layer is disposed on the substrate. The first supporting layer extends along a second direction different from the first direction. The capacitor dielectric includes a first surface and a second surface which are disposed on two opposite sides along the first direction. The second surface is exposed by the first capacitor electrode. The first supporting layer is disposed between the first surface and the second surface of the capacitor dielectric.

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: A method for forming a semiconductor device structure includes forming alternating first semiconductor layers and second semiconductor layers stacked over a substrate. The method also includes etching the first semiconductor layers and the second semiconductor layers to form a fin structure. The method also includes oxidizing the first semiconductor layers to form first oxidized portions of the first semiconductor layers and oxidizing the second semiconductor layers to form second oxidized portions of the second semiconductor layers. The method also includes removing the oxides over the sidewalls of the second semiconductor layers. After removing the second oxidized portions, an upper layer of the second semiconductor layers is narrower than a lower layer of the second semiconductor layers. The method also includes removing the first semiconductor layers to form a gate opening between the second semiconductor layers. The method also includes forming a gate structure in the gate opening.

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: A method of producing a five-carbon ring derivative-containing polyurethane involves introducing a DCPD-derived 5-carbon cyclic compound into a polyurethane material and effectuating polymerization in the presence of a solvent of a low boiling point and low toxicity to produce a five-carbon ring derivative-containing polyurethane of a high molecular weight.

Abstract: A method of producing a five-carbon ring derivative-containing polyurethane involves introducing a DCPD-derived 5-carbon cyclic compound into a polyurethane material and effectuating polymerization in the presence of a solvent of a low boiling point and low toxicity to produce a five-carbon ring derivative-containing polyurethane of a high molecular weight.

Abstract: The present invention provides porous membrane-binding polypeptides, fusion proteins thereof, and methods for use of the polypeptides and fusion proteins in binding assays.

Abstract: The present invention provides porous membrane-binding polypeptides, fusion proteins thereof, and methods for use of the polypeptides and fusion proteins in binding assays.

Abstract: A management system of wireless power transmission comprises a plurality of first power modules, wherein the first power modules form a first cluster. Each of the first power modules comprises a first power unit, an energy information unit, a first wireless transceiver unit and a first control unit. The energy information unit is coupled to the first power unit. The first wireless transceiver unit is used for sending or receiving the first power transmission information and electrical energy. The first control unit is coupled to the energy information unit and the first wireless transceiver unit, and controls the first wireless transceiver unit to send or receive power transmission information and electrical energy. The first wireless transceiver units send the first power transmission information to each other. The first power modules determine the priority according to a control signal.

Abstract: A multi-layered matrix, a method of tissue repair using the same, and multi-layered implant prepared thereof are provided. The multi-layered matrix comprises a first element and a second element connected thereto, and the second element comprises a hollow cavity. The first and the second elements are composed of a composite material comprising a bioabsorbable porous material.

Abstract: A multi-layered matrix, a method of tissue repair using the same, and multi-layered implant prepared thereof are provided. The multi-layered matrix comprises a first element and a second element connected thereto, and the second element comprises a hollow cavity. The first and the second elements are composed of a composite material comprising a bioabsorbable porous material.

Abstract: A multi-layered matrix, a method of tissue repair using the same, and multi-layered implant prepared thereof are provided. The multi-layered matrix comprises a first element and a second element connected thereto, and the second element comprises a hollow cavity. The first and the second elements are composed of a composite material comprising a bioabsorbable porous material.

Abstract: A multi-layered matrix, a method of tissue repair using the same, and multi-layered implant prepared thereof are provided. The multi-layered matrix comprises a first element and a second element connected thereto, and the second element comprises a hollow cavity. The first and the second elements are composed of a composite material comprising a bioabsorbable porous material.

Abstract: An ambient light sensor includes a substrate, a buffer layer formed on the substrate, an absorption layer formed on the buffer layer for absorbing the visible light, and a filter layer formed on the absorption layer for filtering infrared light and high-energy photon insensitive to human eye. The absorption layer is a PIN junction having a compositional graded intrinsic layer. The peak wavelength of responsivity spectrum of the ambient light sensor is very close to that of human eye.

Abstract: An ambient light sensor includes a substrate, a buffer layer formed on the substrate, an absorption layer formed on the buffer layer for absorbing the visible light, and a filter layer formed on the absorption layer for filtering infrared light and high-energy photon insensitive to human eye. The absorption layer is a PIN junction having a compositional graded intrinsic layer. The peak wavelength of responsivity spectrum of the ambient light sensor is very close to that of human eye.

Abstract: A method for contour stroke generation. First, edge pixels of an image are detected. The connected edge pixels are traced to generate non-branched edges. Each non-branched edge represents a list of connected edge pixels without branches. Thereafter, the non-branched edges are clustered. Then, the non-branched edges are transformed into curves, and the curves are drawn with a series of footprints to generate contour strokes of the image.

Abstract: A multi-layered matrix, a method of tissue repair using the same, and multi-layered implant prepared thereof are provided. The multi-layered matrix comprises a first element and a second element connected thereto, and the second element comprises a hollow cavity. The first and the second elements are composed of a composite material comprising a bioabsorbable porous material.