Abstract: A command script editing method, a command script editor and a graphic user interface are provided. The command script editing method includes the following steps. The command node is edited according to at least one inputting action or at least one image identifying action performed on the operation frame when the command script editor is at an image editing mode. The command node is edited according to a setting content of at least one process action when the command script editor is at a process editing mode.

Abstract: A command script editing method, a command script editor and a graphic user interface are provided. The command script editing method includes the following steps. The command node is edited according to at least one inputting action or at least one image identifying action performed on the operation frame when the command script editor is at an image editing mode. The command node is edited according to a setting content of at least one process action when the command script editor is at a process editing mode.

Abstract: A semiconductor device includes: a substrate having a base and an array of semiconductor pillars extending from the base, the substrate being formed with a plurality of trenches, each of which extends into the base and has two opposing trench side walls; a first insulative liner layer formed on each of the trench side walls of each of the trenches and divided into upper and lower segments by a gap that leaves a bit-forming surface of each of the trench side walls uncovered by the first insulative liner layer; and a plurality of buried bit lines, each of which extends into the base from the bit-forming surface of a respective one of the trench side walls of each of the trenches.

Abstract: A video conference system built in an internet protocol (IP) network is provided. The system has a multimedia capturing unit, a DECT telephone, and a video conference terminal apparatus. The DECT telephone is utilized to perform video conferencing with the video conference terminal apparatus by receiving and transmitting sounds. The DECT telephone is further utilized to control the video conference terminal apparatus to capture a target image in the video signals from other users in the video conference. The video conference terminal apparatus updates the phonebook image in the phonebook database thereof with the target image.

Abstract: In an apparatus and method for magnetic field assisted electrochemical discharge machining (ECDM), the magneto hydrodynamic (MHD) effect is utilized to improve the thickness of bubble film and the electrolyte circulation so as to enhance the machining accuracy and efficiency. Since charged ions in a magnetic field are induced by Lorenz force to move, and the electrolysis bubbles generated in the ECDM process are suffused with electrification ions on their surfaces, the electrolysis bubbles can be forced to move in the direction of the magnetic field without the need of mechanical disturbance. The present invention can be widely applied in the micro-machining of non-conductive brittle materials of different dimensions and shapes, comprising the forming of microchannels and microholes on a biochip, and in the micro-opto-electro-mechanical system (MOEMS) and various kinds of micro-machining fields. The machined surface is smooth and does not require a second time machining.

Abstract: A semiconductor device includes: a substrate having a base and an array of semiconductor pillars extending from the base, the substrate being formed with a plurality of trenches, each of which extends into the base and has two opposing trench side walls; a first insulative liner layer formed on each of the trench side walls of each of the trenches and divided into upper and lower segments by a gap that leaves a bit-forming surface of each of the trench side walls uncovered by the first insulative liner layer; and a plurality of buried bit lines, each of which extends into the base from the bit-forming surface of a respective one of the trench side walls of each of the trenches.

Abstract: A vertical transistor structure comprises a substrate, a plurality of pillars formed on the substrate and spaced from each other, a plurality of trenches each formed between two adjacent pillars, a protection layer formed on the surface of a first side wall and the surface of a second side wall of the trench, a first gate and a second gate respectively formed on the protection layer of the first side wall and the second side wall, and a separation layer covering a bottom wall of the trench. The present invention uses the separation layer functioning as an etch stopping layer to the first gate and the second gate while being etched. Further, thickness of the separation layer is used to control the distance between the bottom wall and the first and second gates and define widths of the drain and the source formed in the pillar via ion implantation.

Abstract: A self-aligned wet etching process comprises the steps of: etching a substrate having an etch protection layer on a surface thereof to form a plurality of trenches spaced from each other; and sequentially forming an insulating layer, an etch stop layer and a primary insulator in each trench, wherein the primary insulator is filled inside an accommodation space surrounded by the etch stop layer. During the wet etching process, the etch stop layer protects the primary insulator from being etched, whereby is achieved anisotropic wet etching. Further, the present invention expands the contact areas for electrically connecting with external circuits and exempts the electric contactors formed on the contact areas from short circuit caused by excessively etching the primary insulators.

Abstract: A self-aligned wet etching process comprises the steps of: etching a substrate having an etch protection layer on a surface thereof to form a plurality of trenches spaced from each other; and sequentially forming an insulating layer, an etch stop layer and a primary insulator in each trench, wherein the primary insulator is filled inside an accommodation space surrounded by the etch stop layer. During the wet etching process, the etch stop layer protects the primary insulator from being etched, whereby is achieved anisotropic wet etching. Further, the present invention expands the contact areas for electrically connecting with external circuits and exempts the electric contactors formed on the contact areas from short circuit caused by excessively etching the primary insulators.

Abstract: An embodiment provides a video conference system including an audio processing unit, a video processing unit and a network processing unit. The audio processing unit encodes an audio signal to an audio stream. The video processing unit encodes a pause image to a first video stream when the video conference system is in a pause mode, and encodes a video signal to a second video stream when the video conference system is in a conference mode. The network processing unit encodes the first video stream to a first network package in the pause mode, and encodes the second video stream and the audio stream to a second network package in the conference mode.

Abstract: A video conference system built in an internet protocol (IP) network is provided. The system has a multimedia capturing unit, a DECT telephone, and a video conference terminal apparatus. The DECT telephone is utilized to perform video conferencing with the video conference terminal apparatus by receiving and transmitting sounds. The DECT telephone is further utilized to control the video conference terminal apparatus to capture a target image in the video signals from other users in the video conference. The video conference terminal apparatus updates the phonebook image in the phonebook database thereof with the target image.

Abstract: An image processing method and an image processing apparatus for color correction are provided. The image processing method for color correction comprises the steps of: (a) determining an angle on a color space according to an image data of a basic color, (b) determining a first straight line on the color space according to the angle, (c) determining a second straight line on the color space according to an image data of a pixel, wherein the second straight line is parallel to the first straight line, (d) calculating a distance between the second straight line and the first straight line in order to obtain a color intensity difference value, (e) correcting the image data of the pixel according to the color intensity difference.

Abstract: In an apparatus and method for magnetic field assisted electrochemical discharge machining (ECDM), the magneto hydrodynamic (MHD) effect is utilized to improve the thickness of bubble film and the electrolyte circulation so as to enhance the machining accuracy and efficiency. Since charged ions in a magnetic field are induced by Lorenz force to move, and the electrolysis bubbles generated in the ECDM process are suffused with electrification ions on their surfaces, the electrolysis bubbles can be forced to move in the direction of the magnetic field without the need of mechanical disturbance. The present invention can be widely applied in the micro-machining of non-conductive brittle materials of different dimensions and shapes, comprising the forming of microchannels and microholes on a biochip, and in the micro-opto-electro-mechanical system (MOEMS) and various kinds of micro-machining fields. The machined surface is smooth and does not require a second time machining.

Abstract: The present invention provides an image processing method for color correction.