Patents by Inventor Yu-Shan SHIH

Yu-Shan SHIH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240165170
    Abstract: The present invention provides a method for preventing and/or treating a NSAID-induced gastric ulcer. The method comprises administrating an effective amount of a lactic acid bacterium set to a subject. The lactic acid bacterium set comprises Lactobacillus plantarum GKD7 and Pediococcus acidilactici GKA4.
    Type: Application
    Filed: March 6, 2023
    Publication date: May 23, 2024
    Applicant: GRAPE KING BIO LTD.
    Inventors: Chin-Chu CHEN, Yen-Lien CHEN, Shin-Wei LIN, You-Shan TSAI, Ci-Sian WANG, Yu-Hsin HOU, Yang-Tzu SHIH, Ching-Wen LIN, Ya-Jyun CHEN, Jia-Lin JIANG, Zi-He WU, Yen-Po CHEN, Tzu Chun LIN
  • Patent number: 10998219
    Abstract: A wafer support device includes a susceptor, at least one lift pin, at least one lift pin support base and at least one pad. The susceptor has a bottom surface and a top surface configured to support a wafer. The susceptor has at least one through hole extending between the bottom surface and the top surface. The lift pin is at least partially telescopically received in the through hole of the susceptor. The lift pin support base has at least one coupling feature thereon. The pad is detachably coupled with the coupling feature and supports the lift pin.
    Type: Grant
    Filed: June 13, 2016
    Date of Patent: May 4, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Zong-Han Hu, Yu-Shan Shih, Chen-Liang Chang, Chin-Szu Lee
  • Patent number: 10879049
    Abstract: A chemical vapor deposition (CVD) tool includes a processing chamber, a remote plasma system, a first gas source, a second gas source, a first gas passage and a second gas passage. The remote plasma system is connected to the processing chamber. The first gas passage connects the first gas source, the remote plasma system and the processing chamber. The second gas passage connects the second gas source and the processing chamber, and bypasses the remote plasma system.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Ta Lee, Pen-Li Hung, Yu-Shan Shih
  • Publication number: 20170358474
    Abstract: A wafer support device includes a susceptor, at least one lift pin, at least one lift pin support base and at least one pad. The susceptor has a bottom surface and a top surface configured to support a wafer. The susceptor has at least one through hole extending between the bottom surface and the top surface. The lift pin is at least partially telescopically received in the through hole of the susceptor. The lift pin support base has at least one coupling feature thereon. The pad is detachably coupled with the coupling feature and supports the lift pin.
    Type: Application
    Filed: June 13, 2016
    Publication date: December 14, 2017
    Inventors: Zong-Han HU, Yu-Shan Shih, Chen-Liang Chang, Chin-Szu Lee
  • Publication number: 20170032940
    Abstract: A chemical vapor deposition (CVD) tool includes a processing chamber, a remote plasma system, a first gas source, a second gas source, a first gas passage and a second gas passage. The remote plasma system is connected to the processing chamber. The first gas passage connects the first gas source, the remote plasma system and the processing chamber. The second gas passage connects the second gas source and the processing chamber, and bypasses the remote plasma system.
    Type: Application
    Filed: July 30, 2015
    Publication date: February 2, 2017
    Inventors: Chien-Ta LEE, Pen-Li HUNG, Yu-Shan SHIH