Abstract: A semiconductor device including a first active region having a first active configuration, a second active region having a second, and different, active configuration, and a transition cell arranged between the first and second active regions in which the transition cell has a transitional configuration that is different from and compatible with both the first active configuration and the second active configuration.

Abstract: A semiconductor device includes a circuit substrate, at least one semiconductor die, a first frame, and a second frame. The at least one semiconductor die is connected to the circuit substrate. The first frame is disposed on the circuit substrate and encircles the at least one semiconductor die. The second frame is stacked on the first frame. The first frame includes a base portion and an overhang portion. The base portion has a first width. The overhang portion is disposed on the base portion and has a second width greater than the first width. The overhang portion laterally protrudes towards the at least one semiconductor die with respect to the base portion. The first width and the second width are measured in a protruding direction of the overhang portion.

Abstract: A package structure includes a circuit substrate, a semiconductor package, first bump structures and second bump structures. The semiconductor package is disposed on the circuit substrate, wherein the semiconductor package includes a center region and side regions surrounding the center region. The first bump structures are disposed on the center region of the semiconductor package and electrically connecting the semiconductor package to the circuit substrate. The second bump structures are disposed on the side regions of the semiconductor package and electrically connecting the semiconductor package to the circuit substrate, wherein the first bump structures and the second bump structures have different heights and different shapes.

Abstract: An interface device includes a dynamic tracking bias circuit, an ESD (Electrostatic Discharge) clamp circuit, a pre-driver, a post-driver, and an I/O (Input/Output) pad. The dynamic tracking bias circuit provides a first supply voltage. The first supply voltage is determined according to a main power voltage and a second supply voltage. The ESD clamp circuit limits the second supply voltage. The post-driver is driven by the pre-driver. The I/O pad is driven by the post-driver. The pre-driver and the post-driver are supplied by the main power voltage, the first supply voltage, and the second supply voltage.

Abstract: A semiconductor device includes a circuit substrate, at least one semiconductor die, a first frame, and a second frame. The at least one semiconductor die is connected to the circuit substrate. The first frame is disposed on the circuit substrate and encircles the at least one semiconductor die. The second frame is stacked on the first frame. The first frame includes a base portion and an overhang portion. The base portion has a first width. The overhang portion is disposed on the base portion and has a second width greater than the first width. The overhang portion laterally protrudes towards the at least one semiconductor die with respect to the base portion. The first width and the second width are measured in a protruding direction of the overhang portion.

Abstract: A semiconductor device including a first active region having a first active configuration, a second active region having a second, and different, active configuration, and a transition cell arranged between the first and second active regions in which the transition cell has a transitional configuration that is different from and compatible with both the first active configuration and the second active configuration.

Abstract: A package structure includes a circuit substrate, a semiconductor package, first bump structures and second bump structures. The semiconductor package is disposed on the circuit substrate, wherein the semiconductor package includes a center region and side regions surrounding the center region. The first bump structures are disposed on the center region of the semiconductor package and electrically connecting the semiconductor package to the circuit substrate. The second bump structures are disposed on the side regions of the semiconductor package and electrically connecting the semiconductor package to the circuit substrate, wherein the first bump structures and the second bump structures have different heights and different shapes.

Abstract: The present disclosure provides a circuit board with an embedded chip, which includes a dielectric layer, a first circuit layer, a chip, a conductive connector, and an insulating protection layer. The first circuit layer includes at least one first trace in the dielectric layer. The chip is in the dielectric layer and adjacent to the first trace, where the chip includes a plurality of chip pads at an upper surface of the chip. The conductive connector is on the upper surface of the chip and on the first circuit layer, where a lower surface of the conductive connector contacts at least one chip pad of the chip pads and an upper surface of the first trace. The insulating protection layer is on the chip, the first circuit layer, and the conductive connector, where the insulating protection layer contacts the upper surface of the chip.

Abstract: This disclosure provides a circuit board assembly and a manufacturing method thereof. The circuit board assembly includes circuit board, embedded chip, heat dissipation assembly and temperature switch structure. The temperature switch structure includes a first metal layer and a second metal layer stacked on each other. The first metal layer of the temperature switch structure is electrically connected to the circuit board and is thermally coupled to the embedded chip. A thermal expansion coefficient of the first metal layer is different from a thermal expansion coefficient of the second metal layer so that the temperature switch structure is deformed in response to a temperature change of the embedded chip to be in contact with or spaced apart from the second electrically conductive contact of the heat dissipation assembly.

Abstract: A substrate is manufactured by drilling a chip containing groove in a composite inner layer circuit structure, having a component connecting end of a circuit layer protruding from a mounting side wall in the chip containing groove, mounting a chip component in the chip containing groove, and connecting the surface bonding pad to the component connecting end. The chip component in the present invention penetrates at least two circuit layers, and the surface bonding pad is bonded to the component connecting end of the circuit layer directly, reducing the occupied area of the chip component in each one of the circuit layers, and increasing the area for circuit disposing and the possible amount of chip components that may be mounted in the substrate.

Abstract: A packaging method includes steps of: forming first and second wiring layers electrically connected to each other on two opposite surfaces of a substrate; then configuring mother substrate interconnecting bumps on the first wiring layer and along perimeter of a daughter substrate unit, and then cutting along the perimeter of the daughter substrate unit to expose lateral faces of the mother substrate interconnecting bumps and configuring solder materials thereon; then configuring first and second chips on the first and the second wiring layers to form electrical interconnection between the two chips. A package structure enables interconnecting two chips through one single daughter substrate unit with its wiring layers directly connecting with lateral face contacts of the mother carrier substrate through the mother substrate interconnecting bumps.

Abstract: A packaging method includes steps of: forming first and second wiring layers electrically connected to each other on two opposite surfaces of a substrate; then configuring mother substrate interconnecting bumps on the first wiring layer and along perimeter of a daughter substrate unit, and then cutting along the perimeter of the daughter substrate unit to expose lateral faces of the mother substrate interconnecting bumps and configuring solder materials thereon; then configuring first and second chips on the first and the second wiring layers to form electrical interconnection between the two chips. A package structure enables interconnecting two chips through one single daughter substrate unit with its wiring layers directly connecting with lateral face contacts of the mother carrier substrate through the mother substrate interconnecting bumps.

Abstract: A substrate is manufactured by drilling a chip containing groove in a composite inner layer circuit structure, having a component connecting end of a circuit layer protruding from a mounting side wall in the chip containing groove, mounting a chip component in the chip containing groove, and connecting the surface bonding pad to the component connecting end. The chip component in the present invention penetrates at least two circuit layers, and the surface bonding pad is bonded to the component connecting end of the circuit layer directly, reducing the occupied area of the chip component in each one of the circuit layers, and increasing the area for circuit disposing and the possible amount of chip components that may be mounted in the substrate.

Abstract: A method for manufacturing an embedded component structure includes providing a circuit board having a through hole and a heat dissipation layer; disposing a chip in the through hole; forming a dielectric layer on a first surface and a second surface of the circuit board to seal the chip and cover a lower surface of the heat dissipation layer; removing a first part of the dielectric layer to form a first opening from which a upper surface of the heat dissipation layer is exposed and a second opening from which the lower surface of the heat dissipation layer is exposed; and forming a thermal conductive material layer in the first and the second opening to form a heat dissipation element surrounding the chip. The upper surface of the heat dissipation layer is exposed from the through hole. The chip, the circuit board, and the heat dissipation element are electrically connected.

Abstract: An embedded component structure includes a circuit board, an electronic component, a first conductive terminal, and a second conductive terminal. The circuit board includes a first electrical connection layer and a second electrical connection layer. The electronic component is embedded in the circuit board and includes a first contact and a second contact. The first conductive terminal and the second conductive terminal respectively at least cover a part of top surfaces and side walls of the first contact and the second contact, and the first electrical connection layer and the second electrical connection layer are respectively electrically connected to the first contact and the second contact through the first conductive terminal and the second conductive terminal. A method for manufacturing an embedded component structure is also provided.

Abstract: An embedded component structure includes a circuit board, a chip, and a heat dissipation element. The chip is embedded in the circuit board. The heat dissipation element surrounds the chip. The chip, the circuit board, and the heat dissipation element are electrically connected. The heat dissipation element includes a first part, a second part, and a third part located between the first part and the second part. The first part is in direct contact with a side wall of the chip. The second part is a ground terminal. A method for manufacturing an embedded component structure is also provided.

Abstract: An embedded component structure includes a circuit board, an electronic component, a first conductive terminal, and a second conductive terminal. The circuit board includes a first electrical connection layer and a second electrical connection layer. The electronic component is embedded in the circuit board and includes a first contact and a second contact. The first conductive terminal and the second conductive terminal respectively at least cover a part of top surfaces and side walls of the first contact and the second contact, and the first electrical connection layer and the second electrical connection layer are respectively electrically connected to the first contact and the second contact through the first conductive terminal and the second conductive terminal. A method for manufacturing an embedded component structure is also provided.

Abstract: An embedded component structure includes a circuit board, a chip, and a heat dissipation element. The chip is embedded in the circuit board. The heat dissipation element surrounds the chip. The chip, the circuit board, and the heat dissipation element are electrically connected. The heat dissipation element includes a first part, a second part, and a third part located between the first part and the second part. The first part is in direct contact with a side wall of the chip. The second part is a ground terminal. A method for manufacturing an embedded component structure is also provided.

Abstract: An embedded component structure includes a circuit board, an electronic component, a first conductive terminal, and a second conductive terminal. The circuit board includes a first electrical connection layer and a second electrical connection layer. The electronic component is embedded in the circuit board and includes a first contact and a second contact. The first conductive terminal and the second conductive terminal respectively at least cover a part of top surfaces and side walls of the first contact and the second contact, and the first electrical connection layer and the second electrical connection layer are respectively electrically connected to the first contact and the second contact through the first conductive terminal and the second conductive terminal. A method for manufacturing an embedded component structure is also provided.

Abstract: A method for making a light emitting diode lighting module includes steps of: (a) packaging a plurality of light emitting diode dies respectively on a plurality of die-mounting parts of a metal lead frame to form a plurality of light emitting diodes, respectively; and (b) cutting off supporting parts of the lead frame so as to form a connecting structure through which the light emitting diodes are connected to each other in one of serial, parallel, and serial-and-parallel connecting manners.