Patents by Inventor Yu-Sheng LIANG

Yu-Sheng LIANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240139990
    Abstract: An internal rotor type nail drive device of electric nail gun, comprising a nailing rod and an internal rotor type rotary actuator that can output a specific rotation angle and can drive the nailing rod to move downward for nailing. Specifically, the rotary actuator comprises a stator and a rotor arranged inside the stator, even groups of electromagnetic mutual action components are configured in pairs between the stator and the rotor, to generate a tangential force to drive the rotor to rotate for a specific rotation angle, and to drive the nailing rod to move for a nailing stroke. The nailing stroke can be determined by a specific rotation angle. Thus, through the above configuration of the rotary actuator, the structure of the electric nail gun can be simplified, and the kinetic energy for nailing can be increased.
    Type: Application
    Filed: August 22, 2023
    Publication date: May 2, 2024
    Inventors: I-TSUNG WU, CHIA-SHENG LIANG, YU-CHE LIN, WEN-CHIN CHEN
  • Publication number: 20240128267
    Abstract: A semiconductor device includes a first semiconductor structure, a second semiconductor structure, a first isolation block and a second isolation block. The first semiconductor structure includes a first gate structure wrapping around a first sheet structures and a second sheet structures, and a first dielectric wall disposed between and separating the first and second sheet structures. The second semiconductor structure includes a second gate structure wrapping around third sheet structures. The first isolation block is disposed on the first dielectric wall of the first semiconductor structure and separates the first gate structure into a first gate portion wrapping around the first sheet structures and a second gate portion wrapping around the second sheet structures. The second isolation block is disposed between the first and second semiconductor structures and separates the first gate structure from the second gate structure.
    Type: Application
    Filed: January 30, 2023
    Publication date: April 18, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Sheng Liang, Yu-San Chien, Pin Chun Shen, Wen-Chiang Hong, Chun-Wing Yeung
  • Publication number: 20240120388
    Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.
    Type: Application
    Filed: January 18, 2023
    Publication date: April 11, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Li-Wei Yin, Tzu-Wen Pan, Yu-Hsien Lin, Jih-Sheng Yang, Shih-Chieh Chao, Chia Ming Liang, Yih-Ann Lin, Ryan Chia-Jen Chen
  • Patent number: 10927456
    Abstract: A reaction chamber for vapor deposition apparatus, comprises a susceptor to carry substrates, a ceiling, an upper cavity, and protrusions. The ceiling comprises a front surface faces the substrates and comprises front convex parts and front concave parts with an interlaced arrangement to form a convex-concave surface. The ceiling also comprises a rear surface opposites to the front surface and comprises rear convex parts and rear concave parts corresponded to the front concave parts and the front convex parts respectively. The upper cavity opposites to the rear surface and separated to the rear convex parts to define a first flow channel. The protrusions are disposed in the rear concave parts and separated to a side wall and a bottom wall of the rear concave parts to define a second flow channel which is connected to the first flow channel to introduce a cooling fluid.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: February 23, 2021
    Assignee: HERMES-EPITEK CORP.
    Inventors: Yu-Sheng Liang, Chien-Chin Chiu, Tsan-Hua Huang, Oishi Takahiro, Suda Noboru, Komeno Junji
  • Publication number: 20200017964
    Abstract: A reaction chamber for vapor deposition apparatus, comprises a susceptor to carry substrates, a ceiling, an upper cavity, and protrusions. The ceiling comprises a front surface faces the substrates and comprises front convex parts and front concave parts with an interlaced arrangement to form a convex-concave surface. The ceiling also comprises a rear surface opposites to the front surface and comprises rear convex parts and rear concave parts corresponded to the front concave parts and the front convex parts respectively. The upper cavity opposites to the rear surface and separated to the rear convex parts to define a first flow channel. The protrusions are disposed in the rear concave parts and separated to a side wall and a bottom wall of the rear concave parts to define a second flow channel which is connected to the first flow channel to introduce a cooling fluid.
    Type: Application
    Filed: June 20, 2019
    Publication date: January 16, 2020
    Inventors: Yu-Sheng LIANG, Chien-Chin CHIU, Tsan-Hua HUANG, Oishi TAKAHIRO, Suda NOBORU, Komeno JUNJI