Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2): Zr12O8(OH)14(RCO2)18 ??Formula (A1); or Hf6O4(OH)6(RCO2)10 ??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.

Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (Al) or formula (A2): Zr12O8(OH)14(RCO2)18??Formula (A1); or Hf6O4(OH)6(RCO2)10??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.

Abstract: A method for fabricating semiconductor devices is disclosed. The method includes forming a gate trench over a semiconductor channel, the gate trench being surrounded by gate spacers. The method includes sequentially depositing a work function metal, a glue metal, and an electrode metal in the gate trench. The method includes etching respective portions of the electrode metal and the glue metal to form a gate electrode above a metal gate structure. The metal gate structure includes a remaining portion of the work function metal and the gate electrode includes a remaining portion of the electrode metal. The gate electrode has an upper surface extending away from a top surface of the metal gate structure.

Abstract: A Bluetooth communication system includes: a Bluetooth host device; and a Bluetooth device set which including a first member device and a second member device. The first member device generates a first resolvable set identifier corresponding to the first member device, and generates and transmits target Bluetooth packets containing the first resolvable set identifier to the Bluetooth host device. The second member device generates a resolvable set identifier corresponding to the second member device according to a device set identification information. The Bluetooth host device identifies the first member device as a first privileged device according to the position of the first resolvable set identifier, and transmits a first privileged pairing notice to the first member device and generates a first cypher key. The first member device further generates a second cypher key corresponding to the first cypher key after receiving the first privileged pairing notice.

Abstract: A Bluetooth communication system includes: a Bluetooth host device; and a Bluetooth device set which including a first member device and a second member device. The first member device is arranged to operably generate and transmit target Bluetooth packets containing an auto-pair request to the Bluetooth host device. The second member device is arranged to operably generate a resolvable set identifier corresponding to the second member device according to a device set identification information. The Bluetooth host device is arranged to operably identify the first member device as a first privileged device according to the auto-pair request in the target Bluetooth packets, and to operably transmit a first privileged pairing notice to the first member device and to operably generate a first cypher key. The first member device further generates a second cypher key corresponding to the first cypher key after receiving the first privileged pairing notice.

Abstract: Various embodiments of the present application are directed towards a control gate layout to improve an etch process window for word lines. In some embodiments, an integrated chip comprises a memory array, an erase gate, a word line, and a control gate. The memory array comprises a plurality of cells in a plurality of rows and a plurality of columns. The erase gate and the word line are elongated in parallel along a row of the memory array. The control gate is elongated along the row and is between and borders the erase gate and the word line. Further, the control gate has a pad region protruding towards the erase gate and the word line. Because the pad region protrudes towards the erase gate and the word line, a width of the pad region is spread between word-line and erase-gate sides of the control gate.

Abstract: A semiconductor device according to embodiments of the present disclosure includes a first die including a first bonding layer and a second die including a second hybrid bonding layer. The first bonding layer includes a first dielectric layer and a first metal coil embedded in the first dielectric layer. The second bonding layer includes a second dielectric layer and a second metal coil embedded in the second dielectric layer. The second hybrid bonding layer is bonded to the first hybrid bonding layer such that the first dielectric layer is bonded to the second dielectric layer and the first metal coil is bonded to the second metal coil.

Abstract: A Bluetooth communication system includes: a Bluetooth host device; and a Bluetooth device set which including a first member device and a second member device. The Bluetooth host device controls a display device to display a candidate device list, and to display a single device item in the candidate device list to represent the Bluetooth device set, but does not simultaneously display two device items in the candidate device list to represent the first member device and the second member device. The Bluetooth host device generates a first cypher key according to an instruction from the first member device and a device information of the first member device after receiving a selection command. The first member device establishes a connection with the Bluetooth host device, and generates a second cypher key corresponding to the first cypher key according to a device information of the Bluetooth host device.

Abstract: A catalyst having a structure according to Formula (1): wherein R1 and R2 are each independently selected from aliphatic groups, substituted or unsubstituted phenyl groups and silyl groups, or R1 and R2 are bonded together in the form of a cycloalkane, each R3 is hydrogen, an aliphatic group or a halogen, each Ar group is a meta-substituted phenyl group, a para-substituted phenyl group or a meta- and para-substituted phenyl group, M is a transition metal and L1 and L2 are each independently methyl, Cl, Br, NCCH3, DMSO, or L1 and L2 are bonded together in the form of a bidentate ligand.

Abstract: A display device includes an imaging element, a flat surface light source and a polarization beam splitter. The flat surface light source is used for providing plural illumination beams. A normal line of the flat surface light source and a normal line of the imaging element are not perpendicular to each other. The polarization beam splitter is arranged between the flat surface light source and the imaging element, and has a geometric surface. When the illumination beams from the flat surface light source are projected on the geometric surface, the illumination beams are reflected to the imaging element. The imaging beams from the imaging element are transmitted through the geometric surface. Consequently, an image is outputted. An imaging surface of the imaging surface can be irradiated uniformly by the illumination beams on within a specified viewing angle.

Abstract: A head-mounted display and an optical device are provided. The head-mounted display includes a display element, the optical device and an optical lens. Along an optical axis of the head-mounted display, the optical device includes a polarization beam splitter, a first phase retarder, a beam splitting element and a second phase retarder sequentially. The optical device receives plural light beams from the display element. The optical device is capable of travelling the light beams back and forth many times. The distance between the display element of the head-mounted display and the human eyes is shortened. Consequently, thus the volume of the head-mounted display is reduced.

Abstract: A method for preparing a chondroitin sulfate-polycaprolactone copolymer includes subjecting a chondroitin sulfate component and a polycaprolactone polymer to an atom transfer radical polymerization reaction in the presence of a catalyst.

Abstract: A method of focus and a focusing apparatus and a detecting module are provided. The detecting module includes an ellipse curved-surface reflection device and a light detector. The ellipse curved-surface reflection device has a beam gate, a first focus and a second focus. A light beam is focused by a light focusing device, and is projected on a surface of an object to be detected through the beam gate. The ellipse curved-surface reflection device reflects the light beams reflected or scattered by the object. The light detector is disposed on the second focus for receiving the light beam reflected by the ellipse curved-surface reflection device to generate a detecting result, by which a distance between the light focusing device and the surface of the object to be detected is adjusted, so that the light beam is correctly focused on the surface of the object.

Abstract: A beam shaping module capable of receiving a polarized beam from a light source is disclosed including a beam splitter for splitting the polarized beam into a first beam and a second beam wherein the polarization directions of the first beam and the second beam are perpendicular to each other, and a beam combiner for shaping and combining the first beam and the second beam, where the beam combiner is configured to reverse the energy distribution pattern of one of the first beam and the second beam.

Abstract: A method of focus and a focusing apparatus and a detecting module are provided. The detecting module includes an ellipse curved-surface reflection device and a light detector. The ellipse curved-surface reflection device has a beam gate, a first focus and a second focus. A light beam is focused by a light focusing device, and is projected on a surface of an object to be detected through the beam gate. The ellipse curved-surface reflection device reflects the light beams reflected or scattered by the object. The light detector is disposed on the second focus for receiving the light beam reflected by the ellipse curved-surface reflection device to generate a detecting result, by which a distance between the light focusing device and the surface of the object to be detected is adjusted, so that the light beam is correctly focused on the surface of the object.

Abstract: A beam shaping module capable of receiving a polarized beam from a light source is disclosed, which comprises: a beam splitter, capable of splitting the polarized beam into a first beam and a second beam wherein the polarization directions of the first beam and the second beam are perpendicular to each other; and a beam combiner, capable of shaping and combining the first beam and the second beam; wherein the beam combiner is configured to reverse the energy distribution pattern of one of the first beam and the second beam.

Abstract: A method for manufacturing semiconductor shallow trench isolation is performed as follows. First, a semiconductor substrate including at least one shallow trench is provided, and the shallow trench is filled with Spin-On-Dielectric (SOD) material, e.g., polysilazane, to form a SOD material layer. Then, the SOD material layer is subjected to a planarization process. Oxygen ions are implanted into the SOD material layer to a predetermined depth, and a high temperature process is performed afterwards to transform the portion of the SOD material layer having oxygen ions into a silicon oxide layer. The oxygen ions can be implanted by plasma doping, immersion doping or ion implantation.