Abstract: An electronic device with movable foot pad, including a body and a foot pad module, is provided. The body has a bottom surface. The foot pad module includes a first foot pad, at least one second foot pad, and at least one rotating shaft connecting the first and second foot pads. The second foot pad is rotated relative to the first foot pad by the rotating shaft to switch the foot pad module between first and second states. An axial direction of the rotating shaft is inclined relative to the bottom surface. In the first state, the body is supported on the platform by the first and second foot pads. In the second state, the second foot pad is rotated 180 degrees relative to the first foot pad in the axial direction and protrudes from the first foot pad to support the body on the platform by the second foot pad.

Abstract: An in vitro training method includes scanning a user's oral cavity to create a first oral cavity model. An articulator body is selected according to the first oral cavity model, and plural first customized electrode sheets are formed and assembled onto the articulator body to obtain an in vitro training device. The user bites the in vitro training device during a non-sleep period and uses the plural first customized electrode sheets to proceed with electrical stimulation on a top surface and two sides of a tongue of the user, thereby training a muscular endurance of infrahyoid muscles of the user for a training period. The user's oral cavity is scanned again to create a second oral cavity model. The first oral cavity model is compared with the second oral cavity model to timely renew the customized electrode sheets when the image over rate is lower than 80%.

Abstract: A microphone system of the invention is applicable to an electronic device comprising an adjustable mechanism that causes a change in geometry of a microphone array. The microphone system comprises the microphone array, a sensor and a beamformer. The microphone array comprises multiple microphones that detect sound and generate multiple audio signals. The sensor detects a mechanism variation of the electronic device to generate a sensing output. The beamformer is configured to perform a set of operations comprising: performing a spatial filtering operation over the multiple audio signals using a trained model based on the sensing output, one or more first sound sources in one or more desired directions and one or more second sound sources in one or more undesired directions to generate a beamformed output signal originated from the one or more first sound sources.

Abstract: A method for preparing a long-chain branched polypropylene includes subjecting a T-reagent to a polymerization reaction with propylene in the presence of a catalyst composition. The catalyst composition includes an alkylaluminoxane and a metallocene-based catalyst. The metallocene-based catalyst contains a metal selected from the group consisting of titanium (Ti), zirconium (Zr), and hafnium (Hf). The T-reagent having an alkenyl silyl functional group is selected from the group consisting of 1,2-bis[dimethyl(vinyl)silyl]ethane, dimethyldivinylsilane, 7-octenyldimethyl(vinyl)silane, 7-octenyldimethyl(allyl)silane, 4-(but-3-enyl)phenyldimethyl(vinyl)silane, 4-(but-3-enyl)phenyldimethyl(allyl)silane, and combinations thereof.

Abstract: An electronic device including a substrate, a first semiconductor, a first gate electrode, a second semiconductor, a second gate electrode, and an electrode is provided. The substrate has a surface. The first semiconductor is disposed on the surface of the substrate and includes a silicon semiconductor. The first gate electrode overlaps the first semiconductor in view of a normal direction of the surface. The second semiconductor is disposed on the surface of the substrate and includes an oxide semiconductor. The second gate electrode overlaps the second semiconductor in view of the normal direction of the surface. The electrode is disposed above and electrically connected to the second semiconductor. The electrode overlaps the second semiconductor in view of the normal direction of the surface.

Abstract: The disclosure provides a display panel including a substrate, an active layer, a first electrode layer, a common electrode layer, a cathode layer, and a spacer. The active layer is located on the substrate. The first electrode layer is located on the active layer, and the first electrode layer includes a first gate and a second gate. The common electrode layer is located on the first electrode layer. The common electrode layer has a first region, a second region, and a first necking region. The first necking region connects the first region and the second region. The first region and the first gate are correspondingly disposed, and the second region and the second gate are correspondingly disposed. The cathode layer is located on the common electrode layer. The spacer is located between the common electrode layer and the cathode layer. The spacer and the first necking region are correspondingly disposed.

Abstract: A display device is provided. A first transistor, a second transistor, and a third transistor are disposed above the surface of a substrate. The first transistor includes a first semiconductor and a first gate electrode. The first semiconductor includes a silicon semiconductor. The first gate electrode overlaps the first semiconductor in view of the normal direction of the surface. The second transistor includes a second semiconductor including a first oxide semiconductor. The third transistor includes a third semiconductor and a third gate electrode. The third semiconductor includes a second oxide semiconductor. The third gate electrode overlaps the third semiconductor in view of the normal direction of the surface. A first electrode is disposed above and electrically connected to the third semiconductor. The first electrode overlaps the third gate electrode in a cross-sectional view of the display device.

Abstract: A display device is provided. The display device includes a substrate, a driving transistor, a first insulation layer, a first electrode and a second insulation layer. The driving transistor is disposed on the substrate and includes a gate electrode, and the gate electrode projects a first projection profile on the substrate. The first insulation layer is disposed on the driving transistor. The first electrode is disposed on the first insulation layer, and projects a second projection profile on the substrate. The second insulation layer is disposed on the first electrode and the first insulation layer. The second insulation layer has an opening, the opening exposes a portion of the first electrode, and the opening projects a third projection profile on the substrate.

Abstract: A display device is provided. The display device includes a substrate, a driving transistor, a first insulation layer, a first electrode and a second insulation layer. The driving transistor is disposed on the substrate and includes a gate electrode, and the gate electrode projects a first projection profile on the substrate. The first insulation layer is disposed on the driving transistor. The first electrode is disposed on the first insulation layer, and projects a second projection profile on the substrate. The second insulation layer is disposed on the first electrode and the first insulation layer. The second insulation layer has an opening, the opening exposes a portion of the first electrode, and the opening projects a third projection profile on the substrate.

Abstract: The disclosure provides a display panel including a substrate, an active layer, a first electrode layer, a common electrode layer, a cathode layer, and a spacer. The active layer is located on the substrate. The first electrode layer is located on the active layer, and the first electrode layer includes a first gate and a second gate. The common electrode layer is located on the first electrode layer. The common electrode layer has a first region, a second region, and a first necking region. The first necking region connects the first region and the second region. The first region and the first gate are correspondingly disposed, and the second region and the second gate are correspondingly disposed. The cathode layer is located on the common electrode layer. The spacer is located between the common electrode layer and the cathode layer. The spacer and the first necking region are correspondingly disposed.

Abstract: The disclosure provides a display panel including a substrate, an active layer, a first electrode layer, a common electrode layer, a cathode layer, and a spacer. The active layer is located on the substrate. The first electrode layer is located on the active layer, and the first electrode layer includes a first gate and a second gate. The common electrode layer is located on the first electrode layer. The common electrode layer has a first region, a second region, and a first necking region. The first necking region connects the first region and the second region. The first region and the first gate are correspondingly disposed, and the second region and the second gate are correspondingly disposed. The cathode layer is located on the common electrode layer. The spacer is located between the common electrode layer and the cathode layer. The spacer and the first necking region are correspondingly disposed.

Abstract: A display device is provided. A first transistor, a second transistor, and a third transistor are disposed above the surface of a substrate. The first transistor includes a first semiconductor and a first gate electrode. The first semiconductor includes a silicon semiconductor. The first gate electrode overlaps the first semiconductor in view of the normal direction of the surface. The second transistor includes a second semiconductor including a first oxide semiconductor. The third transistor includes a third semiconductor and a third gate electrode. The third semiconductor includes a second oxide semiconductor. The third gate electrode overlaps the third semiconductor in view of the normal direction of the surface. A first electrode is disposed above and electrically connected to the third semiconductor. The first electrode overlaps the third gate electrode in a cross-sectional view of the display device.

Abstract: A display device including a substrate, a first transistor, a second transistor, and a first capacitor electrode is provided. The first transistor is disposed above the substrate and includes a first semiconductor layer, a first gate electrode, and a first gate insulator layer. The first semiconductor layer includes a silicon semiconductor layer. The first gate electrode overlaps the first semiconductor layer. The first gate insulator layer is disposed between the first semiconductor layer and the first gate electrode. The second transistor is disposed above the substrate and includes a second semiconductor layer and a second gate electrode. The second semiconductor layer includes an oxide semiconductor layer. The second gate electrode overlaps the second semiconductor layer. The first capacitor electrode overlaps the second gate electrode. The first gate insulator is disposed above the first capacitor electrode.

Abstract: A display device is provided. The display device includes a substrate, a driving transistor, a first insulation layer, a first electrode and a second insulation layer. The driving transistor is disposed on the substrate and includes a gate electrode, and the gate electrode projects a first projection profile on the substrate. The first insulation layer is disposed on the driving transistor. The first electrode is disposed on the first insulation layer, and projects a second projection profile on the substrate. The second insulation layer is disposed on the first electrode and the first insulation layer. The second insulation layer has an opening, the opening exposes a portion of the first electrode, and the opening projects a third projection profile on the substrate.

Abstract: A display device is provided. The display device includes a substrate, a driving transistor, a first insulation layer, a first electrode and a second insulation layer. The driving transistor is disposed on the substrate and includes a gate electrode, and the gate electrode projects a first projection profile on the substrate. The first insulation layer is disposed on the driving transistor. The first electrode is disposed on the first insulation layer, and projects a second projection profile on the substrate. The second insulation layer is disposed on the first electrode and the first insulation layer. The second insulation layer has an opening, the opening exposes a portion of the first electrode, and the opening projects a third projection profile on the substrate.

Abstract: The disclosure provides a display panel including a substrate, an active layer, a first electrode layer, a common electrode layer, a cathode layer, and a spacer. The active layer is located on the substrate. The first electrode layer is located on the active layer, and the first electrode layer includes a first gate and a second gate. The common electrode layer is located on the first electrode layer. The common electrode layer has a first region, a second region, and a first necking region. The first necking region connects the first region and the second region. The first region and the first gate are correspondingly disposed, and the second region and the second gate are correspondingly disposed. The cathode layer is located on the common electrode layer. The spacer is located between the common electrode layer and the cathode layer. The spacer and the first necking region are correspondingly disposed.

Abstract: The disclosure provides a display panel including a substrate, an active layer, a first electrode layer, a common electrode layer, a cathode layer, and a spacer. The active layer is located on the substrate. The first electrode layer is located on the active layer, and the first electrode layer includes a first gate and a second gate. The common electrode layer is located on the first electrode layer. The common electrode layer has a first region, a second region, and a first necking region. The first necking region connects the first region and the second region. The first region and the first gate are correspondingly disposed, and the second region and the second gate are correspondingly disposed. The cathode layer is located on the common electrode layer. The spacer is located between the common electrode layer and the cathode layer. The spacer and the first necking region are correspondingly disposed.

Abstract: A display device including a substrate, a first transistor, a second transistor, and a first capacitor electrode is provided. The first transistor is disposed above the substrate and includes a first semiconductor layer, a first gate electrode, and a first gate insulator layer. The first semiconductor layer includes a silicon semiconductor layer. The first gate electrode overlaps the first semiconductor layer. The first gate insulator layer is disposed between the first semiconductor layer and the first gate electrode. The second transistor is disposed above the substrate and includes a second semiconductor layer and a second gate electrode. The second semiconductor layer includes an oxide semiconductor layer. The second gate electrode overlaps the second semiconductor layer. The first capacitor electrode overlaps the second gate electrode. The first gate insulator is disposed above the first capacitor electrode.

Abstract: A display device is provided. The display device includes a substrate, a driving transistor, a first insulation layer, a first electrode and a second insulation layer. The driving transistor is disposed on the substrate and includes a gate electrode, and the gate electrode projects a first projection profile on the substrate. The first insulation layer is disposed on the driving transistor. The first electrode is disposed on the first insulation layer, and projects a second projection profile on the substrate. The second insulation layer is disposed on the first electrode and the first insulation layer. The second insulation layer has an opening, the opening exposes a portion of the first electrode, and the opening projects a third projection profile on the substrate.

Abstract: A display device including a substrate, a first transistor, a second transistor, and a first capacitor electrode is provided. The first transistor is disposed above the substrate and includes a first semiconductor layer, a first gate electrode, and a first gate insulator layer. The first semiconductor layer includes a silicon semiconductor layer. The first gate electrode overlaps the first semiconductor layer. The first gate insulator layer is disposed between the first semiconductor layer and the first gate electrode. The second transistor is disposed above the substrate and includes a second semiconductor layer and a second gate electrode. The second semiconductor layer includes an oxide semiconductor layer. The second gate electrode overlaps the second semiconductor layer. The first capacitor electrode overlaps the second gate electrode. The first gate insulator is disposed above the first capacitor electrode.