Abstract: A touch panel is disclosed, which includes a substrate, plural sensing units, plural wires, and a grounding component. The substrate includes a touch area and a wiring area surrounding the touch area. The sensing units are formed in the touch area. The wires are formed in the wiring area and are connected to the sensing units. The ground component is formed in the wiring area and includes plural hollow portions and conductive portions. At least parts of the hollow portions and at least parts of the conductive portions are alternatingly arranged. The situation of metal peeling can be prevented by slicing the grounding component in the touch panel.

Abstract: A touch panel is disclosed, which includes a substrate, plural sensing units, plural wires, and a grounding component. The substrate includes a touch area and a wiring area surrounding the touch area. The sensing units are formed in the touch area. The wires are formed in the wiring area and are connected to the sensing units. The ground component is formed in the wiring area and includes plural hollow portions and conductive portions. At least parts of the hollow portions and at least parts of the conductive portions are alternatingly arranged. The situation of metal peeling can be prevented by slicing the grounding component in the touch panel.

Abstract: A touch panel is disclosed, which includes a substrate, plural sensing units, plural wires, and a grounding component. The substrate includes a touch area and a wiring area surrounding the touch area. The sensing units are formed in the touch area. The wires are formed in the wiring area and are connected to the sensing units. The ground component is formed in the wiring area and includes plural hollow portions and conductive portions. At least parts of the hollow portions and at least parts of the conductive portions are alternatingly arranged. The situation of metal peeling can be prevented by slicing the grounding component in the touch panel.

Abstract: A touch panel is disclosed, which includes a substrate, plural sensing units, plural wires, and a grounding component. The substrate includes a touch area and a wiring area surrounding the touch area. The sensing units are formed in the touch area. The wires are formed in the wiring area and are connected to the sensing units. The ground component is formed in the wiring area and includes plural hollow portions and conductive portions. At least parts of the hollow portions and at least parts of the conductive portions are alternatingly arranged. The situation of metal peeling can be prevented by slicing the grounding component in the touch panel.

Abstract: A power control device includes an electric outlet strip having female receptacles for providing power supply to electric products being respectively connected thereto and a signal transmission and receiving module adapted for receiving an external control signal, and a control module having a signal adapter controllable to provide a control signal to the signal transmission and receiving module for controlling the control unit of the electric outlet strip to switch on/off each female receptacle and a connection interface for communication with an external electronic apparatus operable to control the signal adapter in providing a control signal to the signal transmission and receiving module for controlling a control unit of the electric outlet strip to switch on/off each female receptacle.

Abstract: A method for improving the capability of metal filling in deep trench is disclosed. The method includes a steps of a sputtering process is performed on the copper seed layer and barrier layer on the sidewall of the deep trench, wherein the deep trench is above the substrate and within the dielectric layer. Then, the wafer is placed in the pre sputter chamber, and etching process is performed on the wafer. When the power is low, the chamber us carrying sputter etching process out and the process has the efficient bombardment on the wafer and no plasma damage issue is concerned. Such that the barrier layer and metal layer are getting more conformal on the sidewall of the deep trench, and than the void will not be exist in subsequently metal filling process.

Abstract: This invention relates to a structure of a dual damascene, in particular to a structure of a dual damascene using in a via. The structure of this dual damascene via comprises of; the first gap, the second gap, the third gap, a barrier layer, the first conductive layer, the second conductive layer, the first dielectric barrier cap, the second dielectric barrier cap, the first low dielectric constant (k) dielectric layer, and the second low dielectric constant dielectric layer. The structure of the present invention can obtain better electromigration (EM) resistance and better via resistance stability by using the third gap to be situated in the first conductive layer.