Abstract: A semiconductor device and a method for manufacturing an interconnecting metal layer thereof are provided. The semiconductor device includes a gate layer, a dielectric layer, an insulating layer, an epitaxial layer, and a sidewall liner. The dielectric layer is disposed on one side of the gate layer, the insulating layer is disposed on another side of the gate layer, the epitaxial layer is located on the insulating layer, and the sidewall liner penetrates the dielectric layer and the gate layer, and one end of the sidewall liner is connected to the epitaxial layer. The sidewall liner is converted from a high-k material to a low-k material by hydrogen and oxygen plasma treatments.

Abstract: An article suitable for throwing in games and able to produce sound and light on impact is provided. The article includes a rigid inner shell having sound and light producing apparatus mounted therein and a flexible outer layer integrally formed from clear or opaque plastic material to cover the entire inner shell and to provide the article with sufficient impact strength and safety in use. The sound and light producing apparatus is powered with batteries and preset to be actuated on impact. The inner shell and the outer layer are formed of aligned sound holes and insertion slots. When the article is not in use, an insert plate can be inserted into the aligned insertion slots to open the circuit of the sound and light producing means and thereby prevents the same from unexpected actuation and unnecessary consumption of battery energy.