Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: In some examples, the disclosure describes a device that includes a first light sensor to determine a first quantity of light at a first location; a second light sensor to determine a second quantity of light at a second location; a display device to display images; a processor; and a non-transitory memory resource storing machine-readable instructions stored thereon that, when executed, cause the processor to: determine when a difference between the first quantity of light and the second quantity of light device exceeds a threshold quantity, select a light sensor from the first light sensor and the second light sensor based on the first quantity of light received by the first light sensor and the second quantity of light received by the second light sensor, and alter a brightness of the display device based on the selected light sensor.

Abstract: The present invention provides a method for machining hard materials using the machining fluids containing long chain alcohol in which the machining fluid is applied to a machining tool and then lubricates the machining of the workpiece by the machining tool and protects the machining tool during machining. The method is particularly useful when used with machining tools having a Mohs hardness of at least 9 and is most particularly useful when used with diamond machining tools.