Abstract: A light emitting diode unit for AC voltage is provided. The light emitting diode unit includes a sub-mount on which electric wires are formed; a first light emitting diode array in which a plurality of first light emitting diodes are serially connected to the sub-mount; and a second light emitting diode array, in which a plurality of second light emitting diodes are connected to the sub-mount as bridge circuits, connecting to the first light emitting diode array. Therefore, rectification can be performed through the bridge circuit without an additional rectifying device by connecting the light emitting diodes to the bridge circuit in series, and thus the structure of the unit can be simplified and a size of the light emitting diode unit can be reduced.

Abstract: A light emitting diode module having improved luminous efficiency is provided. The light emitting diode module includes: a light emitting chip; a phosphor layer formed of phosphor materials emitting light having a wavelength longer than the light emitted from the light emitting chip using light emitted from the light emitting chip as an excitation source; and a reflection plate that is disposed between the light emitting chip and the phosphor layer and that reflects the light emitted by the phosphor layer.

Abstract: A light emitting device package is provided. The light emitting device package comprises a base substrate on which a wiring pattern is formed; a light emitting device mounted on the base substrate to emit light when supplied with driving power through the wiring pattern; a molded lens stably seated on the base substrate and having an inner space for sealing the light emitting device and reflective surfaces formed along outer sides facing the inner space to guide light from the light emitting device in an effective display direction; and a sealing resin between the inner space to bond the base substrate to the molded lens, whereby the packaging structure is simplified so that an assembly process and reliability testing are simplified, process losses due to defects are minimized, and the light extraction efficiency from the light emitting device and heat-dissipation performance are improved.

Abstract: A light emitting device package is provided. The light emitting device package includes a light emitting device; a package body on which the light emitting device is loaded and which dissipates heat generated from the light emitting device to the outside; a first electrode formed in the package body in a single body; and a second electrode inserted into the package body.

Abstract: An optical receiver module is disclosed with a top open can (TO-Can) structure that includes a stem with holes thereon. The holes pass through both sides of the stem. A photo diode mounted on an upper side of the stem, for converting an optical input signal into an electric current. The optical receiver module includes a trans-impedance amplifier, mounted on the upper side of the stem, converts the electric current output from the photo diode into RF signals having opposite phases, amplifies the converted RF signals, and outputs the amplified RF signals to the outside via corresponding output terminals. Signal leads, passing through the holes formed on the stem, output the RF signals having the opposite phases amplified by the trans-impedance amplifier to the outside. Ground leads, extending from a lower part of the stem, ground the stem to the outside of the optical receiver module.

Abstract: A transistor-outline TO-can type optical module includes a stem, a sub-mount arranged in the stem and a laser diode (LD) is mounted in the sub-mount. A photo diode (PD), which has an inclined light incident surface, converts light emitted from the LD to current. A plurality of leads is extended through the stem while electrically being connected to the sub-mount. The inclined light incident surface of the PD permits that sufficient monitoring of photocurrent can be obtained and a p-side up bonding of a p-type electrode is allowed. Thus, the SMSR of the LOB is increased. A bias-tee is built in the TO-can to reduce heat caused by DC current and to increase opto-electric efficiency while suppressing an increase in the temperature of an LD chip.

Abstract: An optical receiver module is disclosed with a top open can (TO-Can) structure that includes a stem with holes thereon. The holes pass through both sides of the stem. A photo diode mounted on an upper side of the stem, for converting an optical input signal into an electric current. The optical receiver module includes a trans-impedance amplifier, mounted on the upper side of the stem, converts the electric current output from the photo diode into RF signals having opposite phases, amplifies the converted RF signals, and outputs the amplified RF signals to the outside via corresponding output terminals. Signal leads, passing through the holes formed on the stem, output the RF signals having the opposite phases amplified by the trans-impedance amplifier to the outside. Ground leads, extending from a lower part of the stem, ground the stem to the outside of the optical receiver module.

Abstract: The invention relates to a multi-layer structure used in an optical communication field and its manufacturing method in which the capacitance effect between the metal patterns of a Silicon Optical Bench (SiOB) is significantly reduced. The multi-layer structure includes a dielectric layer and conductive patterns on a semiconductor substrate, such that the conductive patterns are separated from each other, wherein the dielectric layer and upper portions of the semiconductor substrate between the conductive patterns are etched out to a predetermined thickness to effectively reduce the capacitance without changing the area or structure of the metal patterns.

Abstract: A method for aligning an optical axis of an optical module is disclosed. The method comprises the steps of forming a groove to enable settlement of a lens system in a position spaced apart by a predetermined distance from a position where a semiconductor laser is settled down on the submount; settling the lens system in the groove, bonding a portion of the groove and the lens system, covering the lens system with a groove lid with a predetermined shape, and fixing the groove lid to the top surface of the submount.

Abstract: The invention relates to a multi-layer structure used in an optical communication field and its manufacturing method in which the capacitance effect between the metal patterns of a Silicon Optical Bench (SiOB) is significantly reduced. The multi-layer structure includes a dielectric layer and conductive patterns on a semiconductor substrate, such that the conductive patterns are separated from each other, wherein the dielectric layer and upper portions of the semiconductor substrate between the conductive patterns are etched out to a predetermined thickness to effectively reduce the capacitance without changing the area or structure of the metal patterns.

Abstract: The invention relates to a multi-layer structure used in an optical communication field and its manufacturing method in which the capacitance effect between the metal patterns of a Silicon Optical Bench (SiOB) is significantly reduced. The multi-layer structure includes a dielectric layer and conductive patterns on a semiconductor substrate, such that the conductive patterns are separated from each other, wherein the dielectric layer and upper portions of the semiconductor substrate between the conductive patterns are etched out to a predetermined thickness to effectively reduce the capacitance without changing the area or structure of the metal patterns.

Abstract: The invention relates to a multi-layer structure used in an optical communication field and its manufacturing method in which the capacitance effect between the metal patterns of a Silicon Optical Bench (SiOB) is significantly reduced. The multi-layer structure includes a dielectric layer and conductive patterns on a semiconductor substrate, such that the conductive patterns are separated from each other, wherein the dielectric layer and upper portions of the semiconductor substrate between the conductive patterns are etched out to a predetermined thickness to effectively reduce the capacitance without changing the area or structure of the metal patterns.