Abstract: A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.

Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

Abstract: A method of inspecting a semiconductor device including setting a target place on a wafer, the target place including a deep trench, forming a first cut surface by performing first milling on the target place in a first direction, obtaining first image data of the first cut surface, forming a second cut surface by performing second milling on the target place in a second direction opposite to the first direction, obtaining second image data of the second cut surface, obtaining a plurality of first critical dimension (CD) values for the deep trench from the first image data, obtaining a plurality of second CD values for the deep trench from the second image data, analyzing a degree of bending of the deep trench based on the first CD values and the second CD values, and providing the semiconductor device meeting a condition based on results of the analyzing may be provided.

Abstract: An apparatus for X-ray inspection is provided. The apparatus includes: a stage on which an inspection target is loaded, the stage including a first surface and an opposite second surface; an X-ray generator disposed on or over the first surface of the inspection target and configured to irradiate the inspection target with incident X-rays; and a detection system disposed on or under the second surface of the inspection target and configured to detect first transmitted X-rays transmitted through the inspection target. The detection unit includes a first lens system and a second lens system. The first transmitted X-rays pass through one of the first lens system and the second lens system. The second lens system includes a micro zone plate.

Abstract: A method of manufacturing a semiconductor device comprising: obtaining a raw light signal by selecting a predetermined wavelength band of light reflected from a wafer on which a plurality of patterns are formed; converting the raw light signal into a frequency domain; obtaining a first detection signal having a first frequency band from the raw light signal converted into the frequency domain; obtaining a second detection signal having a second frequency band from the raw light signal converted into the frequency domain, the second frequency band being different from the first frequency band; obtaining a representative value using the first detection signal, the representative value representing a profile of the plurality of patterns; and obtaining a distribution value using the second detection signal, the distribution value representing a profile of the plurality of patterns using the second detection signal.

Abstract: An apparatus for manufacturing a semiconductor device is provided. The apparatus for manufacturing a semiconductor device may include a mass flow controller configured to control a flow of a process gas supplied to a process chamber, the mass flow controller configured to adjust an outflow rate of the process gas exiting the mass flow controller in response to a correction signal, the correction signal generated based on a difference between an inflow rate of the process gas flowing into the mass flow controller and a reference flow rate, a sensor configured to measure a chamber pressure inside the process chamber, an exhaust valve configured to adjust an exhaust speed of an exhaust gas exhausted from the process chamber; and a monitoring apparatus configured to detect a defect of the mass flow controller based on the correction signal, the chamber pressure, and the exhaust speed of the exhaust valve.

Abstract: Provided are a multilayer structure inspection apparatus and method of inspecting a multilayer structure in a sample without damaging the sample, the multilayer structure inspection apparatus being configured to measure both of reflectance and dispersion without damaging the sample, wherein the reflectance and dispersion are variables which are changed sensitively to a change in a repetitive pattern of the multilayer structure, by measuring values thereof, a structural change of the sample between before and after a process is inspected with high accuracy.

Abstract: A method of testing can include providing a first beam having a first focal length and a second beam having a second focal length that is less than the first focal length to a stage region to provide a first reflected beam and a second reflected beam from the stage region. The first reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. The second reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. A first image can be generated from the first reflected beam and a second image can be generated from the second reflected beam. The first image and the second image can be combined to provide a 3D image.

Abstract: A method of inspecting a defect including dividing a semiconductor substrate including the plurality of dies into a plurality of inspection regions, each of the plurality of inspection regions having at least one die, the semiconductor substrate including a pattern provided thereon, obtaining an optical image from each of the plurality of inspection regions, obtaining differential images between a reference region, and comparison regions, the reference region being one of the plurality of inspection regions, the comparison regions being regions other than the reference region from among the plurality of inspection regions, determining an abnormal pixel by performing a signal analysis with respect to respective signal intensities of same-location pixels in the differential images, and designating one or more possible weak patterns by comparing the abnormal pixel with a design pattern may be provided.

Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

Abstract: An apparatus for exchanging a probe includes a stacker configured to receive a probe and to align the probe, a probe connector connected to the probe, and a laser alignment unit including a light emitter and a light receiver. The light emitter is configured to emit a laser beam to the probe, and the light receiver is configured to detect the laser beam reflected by the probe. The laser alignment unit is configured to detect when the probe is properly aligned on the probe connector using the light receiver, and the laser alignment unit is configured to stop moving the stacker when it is detected that the probe is properly aligned.

Abstract: A method of testing can include providing a first beam having a first focal length and a second beam having a second focal length that is less than the first focal length to a stage region to provide a first reflected beam and a second reflected beam from the stage region. The first reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. The second reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. A first image can be generated from the first reflected beam and a second image can be generated from the second reflected beam. The first image and the second image can be combined to provide a 3D image.

Abstract: An optical measuring method includes generating a Bessel beam, filtering the Bessel beam to generate a focused Bessel beam, vertically irradiating the focused Bessel beam onto a substrate in which an opening is formed, and detecting light reflected from the substrate to obtain an image of a bottom surface of the opening.

Abstract: A 3D profiling system of a semiconductor chip is provided and includes a storage unit that receives scanning electron microscope (SEM) images of a plurality of semiconductor devices having respective data with respect to a plurality of different components and gray levels of each SEM image. An extraction unit that performs principal component analysis (PCA) on the gray level of the SEM image and separates principal components from among the plurality of different components is also part of the system. Additionally, a calculation unit receives provision of actually measured values of the plurality of semiconductor devices, and applies a multiple linear regression to the principal components based on the measured values to complete a 3D profile of the semiconductor chip.

Abstract: A surface inspecting method includes: irradiating an incident light beam of a first polarized state on a target object, the incident light beam comprising parallel light and having a cross-sectional area: measuring a second polarized state of a reflected light beam reflected from the target object; and performing inspection on an entire area of the target object on which the incident light beam is irradiated, based on a variation between the first polarized state and the second polarized state.

Abstract: A semiconductor device inspecting apparatus includes a light source for emitting light to a semiconductor pattern. The semiconductor pattern includes a structure that reflects the light from the light source. The semiconductor device inspecting apparatus further includes an objective optical system disposed in a path of the reflected light from the semiconductor pattern, and a first noise filter disposed in a path of the reflected light having passed through the objective optical system, the first noise filter including at least one bar pattern that filters a diffraction noise of the light. The semiconductor device inspecting apparatus additionally includes a second noise filter disposed in a path of the filtered light from the first noise filter, the second noise filter including an outer frame surrounding a central portion. The semiconductor device inspecting apparatus further includes a first photodetector detecting the light having passed through the second noise filter.

Abstract: A method of measuring an overlay offset using a scanning electron microscope system includes: scanning an in-cell region, which includes a lower structure and an upper structure stacked in a sample, using a primary electron beam with a landing energy of at least 10 kV; detecting electrons emitted from the scanned in-cell region; and measuring an overlay offset with respect to overlapping patterns included in the in-cell region using an image of the in-cell region that is generated based on the detected electrons emitted from the scanned in-cell region.

Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

Abstract: In a defect inspection method, first and second inspection conditions having a first sensitivity of detection signal and having a second sensitivity of a detection signal for a defect of interest (DOI), respectively, are determined. The first and second sensitivities are different. First and second images of the same detection region on a substrate surface under the first and second inspection conditions respectively, are obtained. The first and second images are matched to detect a defect in the detection region.

Abstract: An optical transformation module includes a light generator generating a parallel light beam to be incident onto a surface of an inspection object and changing a wavelength of the parallel light beam, and a rotating grating positioned on a path of the parallel light beam and rotatable by a predetermined rotation angle such that the parallel light beam is transformed according to the wavelength of the parallel light beam and the rotation angle of the rotating grating to have a desired incidence angle and a desired incidence position onto the surface of the inspection object.