Abstract: The present invention relates to an organic semiconducting compound and organic optoelectronic components using the same. The organic semiconducting compound own a novel chemical structure. By using the organic semiconducting compound to prepare organic optoelectronic compounds, environmentally friendly non-halogen solvent can be used. In addition, the photoresponsivity and detectivity are excellent in the near-infrared region.

Abstract: An organic semiconductor mixture and an organic optoelectronic device containing the same are provided. A n-type organic semiconductor compound in the organic semiconductor mixture has a novel chemical structure so that the mixture has good thermal stability and property difference during batch production is also minimized. The organic semiconductor mixture is applied to organic optoelectronic devices such as organic photovoltaic devices for providing good energy conversion efficiency while in use.

Abstract: A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, ?-?*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.

Abstract: An organic optoelectronic device comprises a first electrode, an active layer and a second electrode. An active layer material of the active layer comprises a near-infrared organic small molecule with vinyl groups which includes a structure of formula I: Wherein o and p are independently selected from any integer from 0 to 2, and o+p>0. Ar1 is an electron-withdrawing group with a unilateral fused ring structure. Ar2 is a monocyclic or polycyclic structure containing ketone and an electron-withdrawing group, and has a double bond to bond other groups. R1 is different from R2. The active layer material of the organic optoelectronic device comprises an organic small molecule with an asymmetric carbon chain, and has adjustable material solubility, arrangement and conductivity. The present invention also provides an active layer material comprising organic small molecules with asymmetric carbon chains and with symmetrical carbon chains independently, which improve production efficiency.

Abstract: An organic optoelectronic device comprises a first electrode, an active layer and a second electrode. Active layer materials of the active layer comprise a block conjugated polymer materials which includes a structure of formula I: The polymer 1 is a p-type polymer with high energy gap, and the polymer 1 comprises a first electron donor and a first electron acceptor arranged alternately. The polymer 2 is a p-type polymer with low energy gap, and the polymer 2 comprises a second electron donor and a second electron acceptor arranged alternately. Wherein, o and p>0. The organic optoelectronic device of the present invention transfers carriers through the polymer 2 with low energy gap, and suppresses the recombination probability of carriers through the polymer 1 with high energy gap, thereby reducing the leakage current of the organic optoelectronic device.

Abstract: An organic semiconducting compound and an organic photoelectric component containing the same are provided. The organic semiconducting compound has a novel chemical structure to make the organic semiconducting compound have good response to the infrared light. The organic semiconducting compound can be applied to the organic photoelectric components such as organic photodetector (OPD), organic photovoltaic (OPV) cell, and organic field-effect transistor (OFET). Thus, the organic photoelectric components have better light absorption range and photoelectric response while in use.

Abstract: An organic semiconductor mixture and an organic optoelectronic device containing the same are provided. A n-type organic semiconductor compound in the organic semiconductor mixture has a novel chemical structure so that the mixture has good thermal stability and property difference during batch production is also minimized. The organic semiconductor mixture is applied to organic optoelectronic devices such as organic photovoltaic devices for providing good energy conversion efficiency while in use.

Abstract: An organic semiconducting compound and an organic photoelectric component containing the same are provided. The organic semiconducting compound has a novel chemical structure to make the organic semiconducting compound have good response to the infrared light. The organic semiconducting compound can be applied to the organic photoelectric components such as organic photodetector (OPD), organic photovoltaic (OPV) cell, and organic field-effect transistor (OFET). Thus, the organic photoelectric components have better light absorption range and photoelectric response while in use.

Abstract: The invention relates to organic semiconducting compound and organic photoelectric components containing the organic semiconducting compound. The organic semiconducting compound is designed with a novel chemical structure, so that the compound demonstrates a good response value in the infrared light range, which is suitable for organic photoelectronic components, such as organic photodetector (OPD) or organic field-effect transistor (OFET), which come with a wavelength range of better absorbance and lower interference rate when in use.

Abstract: The present invention relates to an Organic Semiconducting Compound and organic photoelectric components using the same. The innovative chemical structure of the Organic Semiconducting Compound allows improved infrared light range response values and renders it suitable for uses in the organic photoelectric components, such as OPD, OFET, or OPV due to its broadened absorbance wavelength range and improved external quantum efficiency.

Abstract: An organic optoelectronic device comprises a first electrode, a first carrier transport layer, an active layer, a second carrier transport layer and a second electrode. The first electrode is a transparent electrode. The active layer includes a low band gap small molecule material which includes a structure of Formula I: Wherein, o, m, n, p, x and y are independently selected from any integer from 0 to 2. Ar0, Ar1 and A2 are electron-donating groups. A0 is a heteroatom-containg tricyclic structure with or without substituents, and. the heteroatom comprises at least one of S, N, Si, and Se. A1 is an electron withdrawing group with or without substituents, and the structure of the electron-withdrawing group comprises at least one of S, N, Si, Se, C?O, —CN, SO2. The organic optoelectronic device of the present invention has good external quantum efficiency and dark current performance.

Abstract: An organic optoelectronic device comprises an active layer comprising a conjugated polymer material which comprises a structure of Formula I: wherein , and X1 and X2 are independently selected from the groups consisting of: N, CH and -CR1. A2 and A3 are the same or different electron-withdrawing groups, and A2 and A3 are not simultaneously the same as A1. D1, D2 and D3 are electron-donating group. sp1 to sp6 are independently selected from aromatic ring and heterocyclic ring. a, b and c are real numbers, and 0 < a ?1, 0 ?b ?1, 0 ?c ?1, a+b+c=1. d, e, f, g, h and i are independently selected from 0, 1 and 2. The organic optoelectronic device of the present invention has adjustable energy gap, and can be a high-performance OPV or a high-detectivity OPD.

Abstract: An organic semiconductor device is revealed. The organic semiconductor device includes a first electrode, an electron transport layer, an active layer, a hole transport layer, and a second electrode. The active layer includes an electron donor and at least one electron acceptor. The energy barrier between HOMO level of the electron donor and the energy level of PEDOT:PSS or derivatives in the electron transport layer is less than 0.4 eV. The use of the organic semiconductor device and a formulation of materials for the active layer are also disclosed.

Abstract: A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, ?-?* stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.

Abstract: The present invention relates to a non-fullerene acceptor compound containing benzoselenadiazole, and organic optoelectronic devices comprising the same.