Patents by Inventor Yu-Tang Yang

Yu-Tang Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240087955
    Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.
    Type: Application
    Filed: September 1, 2023
    Publication date: March 14, 2024
    Inventors: Yi XU, Xianyuan ZHAO, Zhimin QI, Aixi ZHANG, Geraldine VASQUEZ, Dien-Yeh WU, Wei LEI, Xingyao GAO, Shirish PETHE, Wenting HOU, Chao DU, Tsung-Han YANG, Kyoung-Ho BU, Chen-Han LIN, Jallepally RAVI, Yu LEI, Rongjun WANG, Xianmin TANG
  • Publication number: 20240088042
    Abstract: A semiconductor structure includes a dielectric layer over a substrate, a via conductor over the substrate and in the dielectric layer, and a first graphene layer disposed over the via conductor. In some embodiments, a top surface of the via conductor and a top surface of the dielectric layer are level. In some embodiments, the first graphene layer overlaps the via conductor from a top view. In some embodiments, the semiconductor structure further includes a second graphene layer under the via conductor and a third graphene layer between the dielectric layer and the via conductor. In some embodiments, the second graphene layer is between the substrate and the via conductor.
    Type: Application
    Filed: January 11, 2023
    Publication date: March 14, 2024
    Inventors: SHU-WEI LI, HAN-TANG HUNG, YU-CHEN CHAN, CHIEN-HSIN HO, SHIN-YI YANG, MING-HAN LEE, SHAU-LIN SHUE
  • Publication number: 20240071822
    Abstract: A method for manufacturing a semiconductor structure includes forming a first interconnect feature in a first dielectric feature, the first interconnect feature including a first conductive element exposed from the first dielectric feature; forming a first cap feature over the first conductive element, the first cap feature including a first cap element which includes a two-dimensional material; forming a second dielectric feature with a first opening that exposes the first cap element; forming a barrier layer over the second dielectric feature while exposing the first cap element from the barrier layer; removing a portion of the first cap element exposed from the barrier layer; and forming a second conductive element in the first opening.
    Type: Application
    Filed: August 31, 2022
    Publication date: February 29, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chin-Lung CHUNG, Shin-Yi YANG, Yu-Chen CHAN, Han-Tang HUNG, Shu-Wei LI, Ming-Han LEE
  • Patent number: 9976929
    Abstract: An apparatus is provided to verify the integrity of the confinement boundary of a spent nuclear fuel dry storage canister in operation. An external-convection blocking device is used to temporarily isolate the dry storage system or the dry storage canister from the ambient environment to form an isolated space. A gas sampling-and-analyzing device is connected to the isolated space to measure the leak rate or concentration of helium or radioactive gases which release from the dry storage canister. After the leak rate or concentration of helium or radioactive gases is measured, the integrity of the confinement boundary of the dry storage canister can be verified to further enhance the safety of the spent nuclear fuel dry storage.
    Type: Grant
    Filed: October 20, 2015
    Date of Patent: May 22, 2018
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH, ATOMIC ENERGY COUNCIL, Executive Yuan, R.O.C.
    Inventors: Ching-Wei Yang, Kuei-Jen Cheng, Yu-Tang Yang
  • Publication number: 20170108400
    Abstract: An apparatus is provided to verify the integrity of the confinement boundary of a spent nuclear fuel dry storage canister in operation. An external-convection blocking device is used to temporarily isolate the dry storage system or the dry storage canister from the ambient environment to form an isolated space. A gas sampling-and-analyzing device is connected to the isolated space to measure the leak rate or concentration of helium or radioactive gases which release from the dry storage canister. After the leak rate or concentration of helium or radioactive gases is measured, the integrity of the confinement boundary of the dry storage canister can be verified to further enhance the safety of the spent nuclear fuel dry storage.
    Type: Application
    Filed: October 20, 2015
    Publication date: April 20, 2017
    Inventors: Ching-Wei Yang, Kuei-Jen Cheng, Yu-Tang Yang
  • Publication number: 20160035446
    Abstract: A concrete cask is used for storing a nuclear spent fuel dry storage canister. The cask has a shape of a vertical cylinder and is able to isolate the stored nuclear spent fuel dry storage canister from the ambient environment and shield the radiation from the stored nuclear spent fuels. An insulating ring is used for improving the dissipation and the transference uniformity of decay heat generated from the stored nuclear spent fuels. The insulating ring thus prevents the temperature of the concrete wall adjacent to the canister from exceeding specified limit. An Air inlet and an air outlet are used to generate a natural convection for moving out the decay heat. Therein, the vertical concrete cask is prevented from being overheated. Thus, the present invention improves the storage safety of a dry storage system.
    Type: Application
    Filed: July 31, 2014
    Publication date: February 4, 2016
    Inventors: Kuei-Jen Cheng, Yu-Tang Yang, Hsueh-Yuan Lee
  • Publication number: 20070044427
    Abstract: A cleaning machine operated under water to clean radioactive particles on surfaces of nuclear wastes of middle-high activity to reduce activity, and to prevent radiation from leaking out when cleaning the nuclear wastes.
    Type: Application
    Filed: August 26, 2005
    Publication date: March 1, 2007
    Inventors: Kuo-Chi Lan, Tien-Chan Chang, Yu-Tang Yang, Chun-Ming Wu
  • Patent number: 6933511
    Abstract: An ion implanting apparatus of has a wafer cassette capable of loading a plurality of wafers, an implanting chamber including an implanting base, a cassette-transferring module for moving the wafer cassette, and a wafer-transferring module for moving the wafer from the wafer cassette to the implanting base. The wafer cassette has a plurality of irradiation trays for loading the wafer, while the implanting base has a guiding slot for guiding the irradiation tray. The cassette-transferring module includes a rack positioned on the wafer cassette, a gear for moving the wafer cassette by driving the rack through rotating, and a first stepping motor for driving the gear. The wafer-transferring module has a push plate for moving the irradiation tray from the wafer cassette to the implanting base, and a second stepping motor for driving the push plate.
    Type: Grant
    Filed: November 18, 2003
    Date of Patent: August 23, 2005
    Assignee: Atomic Energy Council Institute of Nuclear Energy Research
    Inventors: Tsun-Neng Yang, Tai-Cheng Gunng, Wei-Yang Ma, Yu-Tang Yang, Ming-Ruesy Tsai, Kao-Chi Lan
  • Publication number: 20050104012
    Abstract: The ion implanting apparatus of the present invention comprises a wafer cassette capable of loading a plurality of wafers, an implanting chamber including an implanting base, a cassette-transferring module for moving the wafer cassette, and a wafer-transferring module for moving the wafer from the wafer cassette to the implanting base. The wafer cassette comprises a plurality of irradiation tray for loading the wafer, while the implanting base comprises a guiding slot for guiding the irradiation tray. The cassette-transferring module comprises a rack positioned on the wafer cassette, a gear for moving the wafer cassette by driving the rack through rotating, and a first stepping motor for driving the gear. The wafer-transferring module comprises a push plate for moving the irradiation tray from the wafer cassette to the implanting base, and a second stepping motor for driving the push plate.
    Type: Application
    Filed: November 18, 2003
    Publication date: May 19, 2005
    Applicant: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: Tsun-Neng Yang, Tai-Cheng Gunng, Wei-Yang Ma, Yu-Tang Yang, Ming-Ruesy Tsai, Kao-Chi Lan
  • Patent number: 6253629
    Abstract: An automatic sampling method and facility are disclosed, by means of which multiple samples are obtained from a closed container filled with heterogeneous solid material. The sampling points are predetermined and well distributed on the container and the sampling position and depth in the container are selected by a special controller of the sampling system. The system can be operated at an open space for non-radioactive material. The obtained samples are collected and blended in a mixer for homogenization treatment to produce a final specimen for analytical measurement. The homogeneous specimen is well accepted for its representative character.
    Type: Grant
    Filed: September 21, 1999
    Date of Patent: July 3, 2001
    Assignee: Institute of Nuclear Energy Research
    Inventors: Maw-Chwain Lee, Yu-Tang Yang, Fun-Yeuan Hwang, Yuen-Liang Chen