Abstract: A terahertz wave detection chip includes a substrate and at least one detection structure. The detection structure is disposed on a surface of the substrate. The detection structure includes a metamaterial layer and a hydrophilic layer, and the hydrophilic layer is disposed on the metamaterial layer.

Abstract: A retention mechanism is provided for retaining graphics add-in cards in an information handling system. The retention mechanism includes a mount and a retention bracket. The mount is affixed to the information handling system and includes mounting locations. The retention bracket is configured to be affixed to a particular one of the mounting locations and includes an adjustable filler device. The filler device is configured to secure a first graphics add-in card having a first width with the filler device located in a first position, and to secure a second graphics add-in card having a second width that is wider than the first width with the filler device located in a second position.

Abstract: Methods, systems, and devices for cryptographic key management are described. A memory device can issue, by a firmware component, a command to generate a first cryptographic key for encrypting or decrypting user data stored on a memory device. The memory device can generate, by a hardware component, the first cryptographic key based on the command. The memory device can encrypt, by the hardware component, the first cryptographic key using a second cryptographic key and an initialization vector. The memory device can store the encrypted first cryptographic key in a nonvolatile memory device separate from the hardware component.

Abstract: A photographing lens assembly includes five lens elements, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element with positive refractive power has an object-side surface being convex in a paraxial region. The second lens element has an object-side surface being concave in a paraxial region. The third lens element has an object-side surface being convex in a paraxial region. The fourth lens element has an object-side surface being concave in a paraxial region, wherein two surfaces thereof are both aspheric. The fifth lens element has an object-side surface and an image-side surface being both aspheric. At least one surface of the lens elements has at least one inflection point.

Abstract: A method includes providing a semiconductor substrate, and forming first and second metal gate stacks in a dummy region of the semiconductor substrate and third metal gate stacks in an active device region of the semiconductor substrate. The active device region is surrounded by the dummy region and includes a main area and a tip area protruding from the main area in a top view. The first metal gate stacks are associated with the tip area and having a first pattern density, and the second metal gate stacks are associated with the main area and having a second pattern density greater than the first pattern density. The method further includes performing a chemical mechanical polishing (CMP) process to the first, the second, and the third metal gate stacks. After the CMP process, the third metal gate stacks in the tip area and in the main area have a same height.

Abstract: A microfluidic sensor chip includes a body comprising a substrate and an upper cover, and the upper cover having at least one opening, at least one microfluidic channel formed on the substrate and has a supporting surface, wherein the at least one microfluidic channel communicates with the at least one opening, and a metamaterial layer coated on the supporting surface, wherein the metamaterial layer has a plurality of regions, and each region has a corresponding resonance pattern. The present disclosure further provides a measuring system for microfluidic sensor chip includes a carrying board, a plurality of the microfluidic sensor chips, a transmitter emitting a terahertz wave corresponding to the resonance pattern of one of the microfluidic sensor chips, a receiver receiving a reflected wave corresponding to the terahertz wave, and a processor receiving the reflected wave from the processor, and determining a testing sample characteristic according to the reflected wave.

Abstract: An optical imaging system includes ten lens elements which are, in order from an object side to an image side along an optical path: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element, an eighth lens element, a ninth lens element and a tenth lens element. Each of the ten lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The second lens element has negative refractive power. The tenth lens element has negative refractive power, and at least one of the object-side surface and the image-side surface of the tenth lens element has at least one inflection point.

Abstract: An antenna module using two antennas with different radiation mechanisms for signal transmitting and receiving includes a substrate, a first antenna, and a second antenna. A first surface of the substrate includes a first clearance area and a second clearance area, the first clearance area is located in a first corner area of the first surface, and the second clearance area is located in a second corner area of the first surface. The first antenna includes a first radiation portion located in the first clearance area, and the second antenna includes a second radiation portion located in the second clearance area. An antenna type of the first antenna is different from an antenna type of the second antenna, and the first antenna and the second antenna are configured to transmit and receive signals of the same frequency. An electronic device is also disclosed.

Abstract: A data bus coupled to a plurality of memory devices is determined to be in a read mode. Responsive to determining that the data bus is in the read mode, a particular read operation identified in a particular memory queue of memory queues that include identifiers of one or more write operations and identifiers of one or more read operations is determined. The particular memory queue includes a highest number of read operations for a memory device of the memory devices. The particular read operation is transmitted from the particular memory queue over the data bus.

Abstract: A memory sub-system periodically performs a first wear leveling operation using a direct mapping function on a data management unit of a memory component in the memory sub-system at a first frequency. The memory sub-system further periodically performs a second wear leveling operation using indirect mapping on a group of data management units of the memory component at a second frequency, wherein the second wear leveling operation is performed less frequently than the first wear leveling operation.

Abstract: An electronic device includes at least two image capturing units which face the same side. The at least two image capturing units include a first image capturing unit and a second image capturing unit. The first image capturing unit includes an optical image system and a first image sensor. The optical image system includes a first lens element and an image surface. The first image sensor is disposed on the image surface of the optical image system thereof and has a first resolution of at least 60 megapixels. The second image capturing unit includes an optical image system and a second image sensor. The optical image system includes a first lens element and an image surface. The second image sensor is disposed on the image surface of the optical image system thereof and has a second resolution of at least 40 megapixels.

Abstract: A liquid crystal display includes a display panel and a driving unit. The display panel includes a plurality of resetting sections, which correspond to display a plurality of screens, respectively. There is a first voltage difference between a corresponding one of the column voltages and a corresponding one of the row voltages of one of the resetting sections, and there is a second voltage difference between a corresponding one of the column voltages and a corresponding one of the row voltages of another of the resetting sections. The second voltage difference reaching a second maximum voltage difference value is after the first voltage difference reaching a first maximum voltage difference value by a delay time, so as to clear the screens.

Abstract: A semiconductor device includes a plurality of interlayer dielectric layers, a memory cell, and a first capping layer. The memory cell is embedded in the interlayer dielectric layers, the first capping layer covers the memory cell and surrounds the sidewalls of the memory cell, the first capping layer includes a hydrogen absorbing material, and the hydrogen absorbing material prevents hydrogen gas from entering the memory cell.

Abstract: Methods, systems, and devices for cryptographic key management are described. A memory device can issue, by a firmware component, a command to generate a first cryptographic key for encrypting or decrypting user data stored on a memory device. The memory device can generate, by a hardware component, the first cryptographic key based on the command. The memory device can encrypt, by the hardware component, the first cryptographic key using a second cryptographic key and an initialization vector. The memory device can store the encrypted first cryptographic key in a nonvolatile memory device separate from the hardware component.

Abstract: A continuous metal on diffusion edge (CMODE) may be used to form a CMODE structure in a semiconductor device after a replacement gate process that is performed to replace the polysilicon dummy gate structures of the semiconductor device with metal gate structures. The CMODE process described herein includes removing a portion of a metal gate structure (as opposed to removing a portion of a polysilicon dummy gate structure) to enable formation of the CMODE structure in a recess left behind by removal of the portion of the metal gate structure.

Abstract: The present disclosure describes fabricating devices with tunable gate height and effective capacitance. A method includes forming a first metal gate stack in a dummy region of a semiconductor substrate and a second metal gate stack in an active device region of the semiconductor substrate, and performing a chemical mechanical polishing (CMP) process using a slurry including charged abrasive nanoparticles. The first and second metal gate stacks are different in composition. The charged abrasive nanoparticles include a first concentration in the active device region different from a second concentration in the dummy region.

Abstract: Aspects of the present disclosure configure a system component, such as a memory sub-system controller, to provide adaptive media management based on memory component reliabilities. The controller can access configuration data to determine a reliability grade associated with individual groups of the memory components. The controller can then adaptively select between different media management operations based on the reliability grade associated with each individual group of the memory components.

Abstract: A computing system having a memory component with an embedded media controller. The memory component is encapsulated within an integrated circuit (IC) package. The embedded controller within the IC package is configured to: receive incoming packets, via a serial communication interface of the controller, from a serial connection outside of the IC package; convert the incoming packets into commands and addresses according to a predetermined serial communication protocol; operate memory units encapsulated within the IC package according to the commands and the addresses; convert results of at least a portion of the commands into outgoing packets; and transmit the outgoing packets via the serial communication interface to the serial connection outside of the IC package.

Abstract: An antenna comprises a first radiation part, a second radiation part, a feed part, and a ground part. The first radiation part comprises a first radiator. The second radiation part comprises a second radiator. A first side of the feed part bends upward to form the first radiator, which is a part of the first radiation part. A second side of the feed part bends upward to form the second radiator, which is a part of the second radiation part. The first side is arranged relative to the second side. A height difference between the first radiator and the second radiator in the first direction is within a preset range. The first direction is perpendicular to a plane where the feed part is located. A vehicle is also provided.

Abstract: A photographing optical lens assembly includes eight lens elements, which are, in order from an object side to an image side along an optical path, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element and an eighth lens element. Each of the eight lens elements has an object-side surface towards the object side and an image-side surface towards the image side. The first lens element has positive refractive power. The object-side surface of the fifth lens element is concave in a paraxial region thereof. The image-side surface of the sixth lens element is concave in a paraxial region thereof. The object-side surface of the seventh lens element is convex in a paraxial region thereof. The image-side surface of the eighth lens element is concave in a paraxial region thereof.