Patents by Inventor Yu-te Su

Yu-te Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11933996
    Abstract: A compound prism module is provided, including: a first prism, a second prism, and an interface filling medium. The first prism has a first light-incident surface, a first reflecting surface, and a first light-emitting surface, where the first light-incident surface and the first light-emitting surface are connected to a first side edge, and the first light-incident surface and the first reflecting surface are connected to a first chamfered plane. The second prism has a second light-incident surface, a second reflecting surface, and a second light-emitting surface, wherein the second light-incident surface and the second light-emitting surface are connected to a second side edge, and the second light-incident surface and the second reflecting surface are connected to a second chamfered plane. The first light-incident surface and the second light-incident surface are connected to each other, and the first side edge and the second side edge are parallel to each other.
    Type: Grant
    Filed: March 7, 2022
    Date of Patent: March 19, 2024
    Assignee: GUANGZHOU LUXVISIONS INNOVATION TECHNOLOGY LIMITED
    Inventors: Cheng-Te Tseng, Yu-Yan Su, Ting-Cheng Lee
  • Publication number: 20230335443
    Abstract: A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second work function layer in the second gate trench, causing the first work function layer in the first gate trench to contain metal dopants that are left from the second work function layer etched in the first gate trench. The method includes forming a first active gate structure and second active gate structure, which include the first work function layer and the metal dopants left from the second work function layer in the first gate trench, and the first work function layer and no metal dopants left behind from the second work function layer, respectively.
    Type: Application
    Filed: June 20, 2023
    Publication date: October 19, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chi Pan, Kuo-Bin Huang, Ming-Hsi Yeh, Ying-Liang Chuang, Yu-Te Su, Kuan-Wei Lin
  • Patent number: 11715670
    Abstract: A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second work function layer in the second gate trench, causing the first work function layer in the first gate trench to contain metal dopants that are left from the second work function layer etched in the first gate trench. The method includes forming a first active gate structure and second active gate structure, which include the first work function layer and the metal dopants left from the second work function layer in the first gate trench, and the first work function layer and no metal dopants left behind from the second work function layer, respectively.
    Type: Grant
    Filed: July 9, 2021
    Date of Patent: August 1, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Yu-Chi Pan, Kuo-Bin Huang, Ming-Hsi Yeh, Ying-Liang Chuang, Yu-Te Su, Kuan-Wei Lin
  • Publication number: 20230008579
    Abstract: A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second work function layer in the second gate trench, causing the first work function layer in the first gate trench to contain metal dopants that are left from the second work function layer etched in the first gate trench. The method includes forming a first active gate structure and second active gate structure, which include the first work function layer and the metal dopants left from the second work function layer in the first gate trench, and the first work function layer and no metal dopants left behind from the second work function layer, respectively.
    Type: Application
    Filed: July 9, 2021
    Publication date: January 12, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yu-Chi Pan, Kuo-Bin Huang, Ming-Hsi Yeh, Ying-Liang Chuang, Yu-Te Su, Kuan-Wei Lin
  • Publication number: 20130236736
    Abstract: An electroplating jig for processing electroplating at a certain location, an electroplating method incorporating with the electroplating jig, and an electro product free of a plating proof layer produced by the electroplating method are provided. The electroplating jig includes a base and a flexible electric conductive pad. An accommodation slot and an opening are respectively installed on two opposite surfaces of the base in which an electro can be disposed in the accommodation slot and the accommodation slot is larger than the opening and communicated with the opening, the opening exposes a first metal pattern of the electro therefrom. The flexible electric conductive pad is blanketed on a second metal pattern formed on another surface of the electro to electrically connect the first metal pattern and the second metal pattern.
    Type: Application
    Filed: September 5, 2012
    Publication date: September 12, 2013
    Inventors: Tzuh-Suan WANG, Ming-Chi Chiu, Yu-te Su, Ming-Chang Ku
  • Patent number: D1024460
    Type: Grant
    Filed: February 7, 2022
    Date of Patent: April 23, 2024
    Assignee: PLANDDO CO., LTD.
    Inventors: Tsung-Te Sun, Chao-Shun Liang, Chia-Hsin Wu, Ping-Yun Su, Yu-Huai Yang