Abstract: Methods and systems relating to the field of parallel computing are disclosed herein. The methods and systems disclosed include approaches for sparsity uniformity enforcement for a set of computational nodes which are used to execute a complex computation. A disclosed method includes determining a sparsity distribution in a set of operand data, and generating, using a compiler, a set of instructions for executing, using the set of operand data and a set of processing cores, a complex computation. Alternatively, the method includes altering the operand data. The method also includes distributing the set of operand data to the set of processing cores for use in executing the complex computation in accordance with the set of instructions. Either the altering is conducted to, or the compiler is programmed to, balance the sparsity distribution among the set of processing cores.

Abstract: Methods and systems relating to the field of parallel computing are disclosed herein. The methods and systems disclosed include approaches for sparsity uniformity enforcement for a set of computational nodes which are used to execute a complex computation. A disclosed method includes determining a sparsity distribution in a set of operand data, and generating, using a compiler, a set of instructions for executing, using the set of operand data and a set of processing cores, a complex computation. Alternatively, the method includes altering the operand data. The method also includes distributing the set of operand data to the set of processing cores for use in executing the complex computation in accordance with the set of instructions. Either the altering is conducted to, or the compiler is programmed to, balance the sparsity distribution among the set of processing cores.

Abstract: An aqueous polyurethane dispersion and a textile are provided. The aqueous polyurethane dispersion includes water and a bio-based polyurethane. The bio-based polyurethane includes bio-based polyester polyol, hydrophilic polyol, isocyanate, and hydrophilic compound. A weight ratio of the bio-based polyester polyol to the hydrophilic polyol is 2.7:1 to 5.3:1.

Abstract: Methods and systems relating to reducing the number of computations required to execute an artificial neural network (ANN) are disclosed herein. The methods include a computer-implemented method conducted during an execution of an ANN. The method includes generating a set of execution data, generating a summary of a set of neural network data of the ANN, generating a summary of a set of execution data of the execution of the ANN, generating a prediction using the summary of the set of neural network data and the summary of the set of execution data, and executing a composite computation. The composite computation is required for the execution of the ANN. The method also includes suppressing a set of component computations of the composite computation. The set of suppressed component computations is at least partly determined by the prediction.

Abstract: An electrocardiogram converting device includes a casing, a first connector, a chest lead connection module, and a limb lead connection module. The casing includes a first surface, a second surface, and a third surface. The first connector is installed on the first surface of the casing, the chest lead connection module is installed on the second surface of the casing, and the limb lead connection module is installed on the third surface of the casing. In addition, the second surface is perpendicular to the third surface, and the first surface is parallel to the third surface, so as to reduce a length and a volume of the electrocardiogram converting device and improve the convenience of electrocardiogram measurement.

Abstract: Methods and systems relating to the field of parallel computing are disclosed herein. The methods and systems disclosed include approaches for sparsity uniformity enforcement for a set of computational nodes which are used to execute a complex computation. A disclosed method includes determining a sparsity distribution in a set of operand data, and generating, using a compiler, a set of instructions for executing, using the set of operand data and a set of processing cores, a complex computation. Alternatively, the method includes altering the operand data. The method also includes distributing the set of operand data to the set of processing cores for use in executing the complex computation in accordance with the set of instructions. Either the altering is conducted to, or the compiler is programmed to, balance the sparsity distribution among the set of processing cores.

Abstract: Methods and systems relating to the field of parallel computing are disclosed herein. The methods and systems disclosed include approaches for sparsity uniformity enforcement for a set of computational nodes which are used to execute a complex computation. A disclosed method includes determining a sparsity distribution in a set of operand data, and generating, using a compiler, a set of instructions for executing, using the set of operand data and a set of processing cores, a complex computation. Alternatively, the method includes altering the operand data. The method also includes distributing the set of operand data to the set of processing cores for use in executing the complex computation in accordance with the set of instructions. Either the altering is conducted to, or the compiler is programmed to, balance the sparsity distribution among the set of processing cores.

Abstract: A display panel is provided. The display panel includes a sensing region. The display panel includes a capping substrate, a light shielding layer, and a transparent material. The light shielding layer is disposed under the capping substrate. The light shielding layer includes a plurality of holes. The transparent material is disposed under the light shielding layer. The plurality of holes and the transparent material correspond to the sensing region.

Abstract: A method for manufacturing a semiconductor device, including the following steps. A plurality of first vias are formed in a first dielectric layer in a memory cell region and a peripheral region. A surface treatment is performed on the plurality of first vias to form a plurality of sacrificial layers. The plurality of sacrificial layers are removed to form a plurality of recesses. A plurality of protective layers are formed in the plurality of recesses. A memory device is formed on the first dielectric layer in the memory cell region. A second dielectric layer is formed on the memory device and on the first dielectric layer. A plurality of second vias is formed in the second dielectric layer in the memory cell region and the peripheral region to electrically connect the memory device in the memory cell region and the first vias in the peripheral region, respectively.

Abstract: A synapse system is provided which includes three transistors and a resistance-switching element arranged between two neurons. The resistance-switching element has a resistance value and it is arranged between two neurons. A first transistor is connected between the resistance-switching element and one of the neurons. A second transistor and a third transistor are arranged between the two neurons, and are connected in series which interconnects with the gate of the first transistor. A first input signal is transmitted from one of the neurons to the other neuron through the first transistor. A second input signal is transmitted from one of the neurons to the other neuron through the second transistor and the third transistor. The resistance value of the resistance-switching element is changed based on the time difference between the first input signal and the second input signal.

Abstract: A display panel is provided. The display panel includes a sensing region. The display panel includes a capping substrate, a light shielding layer, and a transparent material. The light shielding layer is disposed under the capping substrate. The light shielding layer includes a plurality of holes. The transparent material is disposed under the light shielding layer. The plurality of holes and the transparent material correspond to the sensing region.

Abstract: A manufacturing method of a transformer includes: winding a first winding wire around a bobbin, wherein two ends of the first winding wire are connected to a first and a second pin of the bobbin respectively; winding a second winding wire around the bobbin, wherein two ends of the second winding wire are connected to a third and a fourth pin of the bobbin respectively; and winding a third and a fourth winding wire in parallel around the bobbin, wherein two ends of the third winding wire are connected to the second and a fifth pin of the bobbin respectively, and two ends of the fourth winding wire are connected to the fifth and a sixth pin respectively. The first, the third and the fourth winding wires form a primary coil, and the second winding wire is a secondary coil.

Abstract: Provided is a resetting method of a resistive random access memory (RRAM) including the following steps. A first resetting operation and a first verifying operation on the at least one resistive memory cell are performed. Whether to perform a second resetting operation according to a verifying result of the first verifying operation is determined. A second verifying operation is performed after the second resetting operation is determined to be performed and is finished. To determine whether to perform a healing resetting operation according to a verifying result of the second verifying operation, which comprises: performing the healing resetting operation when a verifying current of the second verifying operation is greater than a predetermined current, wherein a resetting voltage of the healing resetting operation is greater than a resetting voltage of the second resetting operation.

Abstract: Provided are a resistive random access memory and a manufacturing method thereof. The resistive random access memory includes first, second, and third electrodes, a variable resistance layer, a selection layer, and first and second bit lines. The second electrode and the third electrode are on the first electrode. The second and third electrodes are separated from each other and overlapped with the sidewall and the top surface of the first electrode. The variable resistance layer is between the first and second electrodes and between the first and third electrodes. The selection layer is between the variable resistance layer and the first electrode. The first bit line is on the second electrode and electrically connected to the second electrode via a first contact. The second bit line is on the third electrode and electrically connected to the third electrode via a second contact.

Abstract: A resistive memory apparatus including a memory cell array, at least one dummy transistor and a control circuit is provided. The memory cell array includes a plurality of memory cells. Each of the memory cells includes a resistive switching element. The dummy transistor is electrically isolated from the resistive switching element. The control circuit is coupled to the memory cell array and the dummy transistor. The control circuit is configured to provide a first bit line voltage, a source line voltage and a word line voltage to the dummy transistor to drive the dummy transistor to output a saturation current. The control circuit is further configured to determine a value of a second bit line voltage for driving the memory cells according to the saturation current. In addition, an operating method and a memory cell array of the resistive memory apparatus are also provided.

Abstract: Provided is a resetting method of a resistive random access memory (RRAM) including the following steps. A first resetting operation and a first verifying operation on the at least one resistive memory cell are performed. Whether to perform a second resetting operation according to a verifying result of the first verifying operation is determined. A second verifying operation is performed after the second resetting operation is determined to be performed and is finished. To determine whether to perform a healing resetting operation according to a verifying result of the second verifying operation, which comprises: performing the healing resetting operation when a verifying current of the second verifying operation is greater than a predetermined current, wherein a resetting voltage of the healing resetting operation is greater than a resetting voltage of the second resetting operation.

Abstract: A three-dimensional semiconductor device includes multiple semiconductor device layers on a substrate, wherein each layer includes a first stacked structure, a first gate dielectric layer, a first semiconductor layer, a first channel layer, a first source region, a first drain region, and a first resistive random access memory cell. The first stacked structure on the substrate includes a first insulating layer and a first gate conductor layer. The first gate dielectric layer surrounds a sidewall of the first stacked structure. The first semiconductor layer surrounds a sidewall of the first gate dielectric layer. The first channel layer is in the first semiconductor layer. The first source region and the first drain region are on both sides of the first channel layer in the first semiconductor layer. The first resistive random access memory cell is on a first sidewall of the first semiconductor layer and connected to the first drain region.

Abstract: Provided is a resistive random access memory (RRAM) including at least one memory cell. The at least one memory cell includes a top electrode, a bottom electrode, a data storage layer, an oxygen gettering layer, a first barrier layer, and an oxygen supplying layer. The data storage layer is disposed between the top electrode and the bottom electrode. The oxygen gettering layer is disposed between the data storage layer and the top electrode. The first barrier layer is disposed between the oxygen gettering layer and the data storage layer. The oxygen supplying layer is disposed between the oxygen gettering layer and the top electrode and/or between the oxygen gettering layer and the first barrier layer.

Abstract: A resistive random access memory including first and second electrodes, a resistance variable layer, first and second metal layers and a resistance stabilizing layer is provided. The second electrode is disposed on the first electrode. The resistance variable layer is disposed between the first and second electrodes. The first metal layer is disposed between the resistance variable layer and the second electrode. The second metal layer is disposed between the first metal layer and the second electrode. The resistance stabilizing layer is disposed between the first and second metal layers. The oxygen content of the resistance variable layer is higher than that of the first metal layer, the oxygen content of the first metal layer is higher than that of the resistance stabilizing layer, the oxygen content of the resistance stabilizing layer is higher than that of the second metal layer.

Abstract: A method for manufacturing a semiconductor device, including the following steps. A plurality of first vias are formed in a first dielectric layer in a memory cell region and a peripheral region. A surface treatment is performed on the plurality of first vias to form a plurality of sacrificial layers. The plurality of sacrificial layers are removed to form a plurality of recesses. A plurality of protective layers are formed in the plurality of recesses. A memory device is formed on the first dielectric layer in the memory cell region. A second dielectric layer is formed on the memory device and on the first dielectric layer. A plurality of second vias is formed in the second dielectric layer in the memory cell region and the peripheral region to electrically connect the memory device in the memory cell region and the first vias in the peripheral region, respectively.