Abstract: A transducer includes: a substrate; and a plurality of transducer elements disposed on the substrate, and each transducer element including: a bottom electrode; an oscillatory element disposed on the bottom electrode and having an opening, wherein there is a cavity between the bottom electrode and the oscillatory element; a top electrode disposed on the oscillatory element, wherein the top electrode and the bottom electrode are overlapped in a top view direction; and a passivation layer disposed on the oscillatory element and the top electrode and in the opening of the oscillatory element, wherein the passivation layer extends continuously from a position on the oscillatory element to a position on the bottom electrode through the opening and the cavity.

Abstract: A method for manufacturing semiconductor structure includes: forming a gate structure on a substrate; forming a source portion and a drain portion in the substrate respectively at two opposite sides of the gate structure; forming a protection layer over the substrate, the gate structure, the source portion and the drain portion; forming an opening in the protective layer to expose the gate structure; and performing a silicidation process to form a silicide layer on the exposed gate structure.

Abstract: A semiconductor may include an active region, an epitaxial source/drain formed in and extending above the active region, and a first dielectric layer formed over a portion of the active region. The semiconductor may include a first metal gate and a second metal gate formed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer and the second metal gate, and a titanium layer, without an intervening fluorine residual layer, formed on the metal gate and the epitaxial source/drain. The semiconductor may include a first metal layer formed on top of the titanium on the first metal gate, a second metal layer formed on top of the titanium layer on the epitaxial source/drain, and a third dielectric layer formed on the second dielectric layer. The semiconductor may include first and second vias formed in the third dielectric layer.

Abstract: The disclosure generally describes one or more techniques for authenticating a webhook endpoint with a webhook server. Some techniques include a webhook server sending a seed with a webhook endpoint after the webhook endpoint is registered with the webhook server. In some examples, the webhook server generates the seed to send to the webhook endpoint and stores the seed with a key associated with the webhook endpoint. In such examples, the webhook server does not send data associated with the particular events to the webhook endpoint until the webhook endpoint acknowledges receipt of the seed while the seed is still valid.

Abstract: A semiconductor structure includes a semiconductor-on-insulator (SOI) substrate including a handle substrate, a buried insulating layer, and a top semiconductor layer; a first deep trench isolation structure that vertically extends through the top semiconductor layer and the buried insulating layer, and includes a first inner insulating liner laterally surrounding a first portion of the top semiconductor layer that is located in a first device region in a plan view, a first non-insulating moat structure laterally surrounding the first inner insulating liner, and a first outer insulating liner that laterally surrounds the first non-insulating moat structure; and a resistive memory array located on the first portion of the top semiconductor layer, and located entirely within the first device region in the plan view.

Abstract: A method for manufacturing an electronic device includes the following steps: providing a carrier and a circuit substrate, wherein the carrier includes a plurality of spacers, the circuit substrate includes a plurality of electronic units, and the electronic units are detected and determined to be normal or defective; providing cover units on the carrier; disposing the circuit substrate on the cover units so that the spacers support the circuit substrate, wherein there is a gap between the circuit substrate and the cover units, and the cover units correspond to the electronic units determined to be normal; vacuuming the gap between the circuit substrate and the cover units; moving the spacers to make the cover units and the circuit substrate contact each other; and pressing the cover units and the circuit substrate to fix the cover units and the circuit substrate to each other.

Abstract: A system and method for cleaning a preclean process chamber in between wafer processing. The internal pressure of the preclean process chamber is reduced to a first pressure and a first gas that consists of oxygen and an inert or noble gas, is introduced into the chamber. Plasma is generated within the preclean process chamber using the first gas at the first pressure. Internal pressure is then reduced to a second pressure, less than the first, and the first gas is continued into the chamber. Plasma is then generated using the first gas at the second pressure. Thereafter, a second gas, consisting of an oxygen-free inert or noble gas, is introduced into the chamber at the second pressure, following which plasma is generated within the chamber using only the second gas.

Abstract: The present disclosure relates to a steel comprising 0.8 wt % to 0.87 wt % C; 1.5 wt % to 2.3 wt % Si; 0.5 wt % to 1.3 wt % Ni; a grain refining agent, selected from the group consisting of 0.08 wt % to 0.25 wt % V, 0.015 wt % to 0.04 wt % Nb, and a combination thereof; and the balance being Fe and inevitable impurities. The present disclosure further relates to a screwdriver bit made of the steel, and a method for processing the steel.

Abstract: An apparatus for manufacturing a semiconductor device may include a chamber, a chuck provided in the chamber, and a biased power supply physically connected with the chuck. The apparatus may include a target component provided over the chuck and the biased power supply, and a magnetron assembly provided over the target component. The magnetron assembly may include a plurality of outer magnetrons and a plurality of inner magnetrons, and a spacing between each adjacent magnetrons of the plurality of outer magnetrons may be different from a spacing between each adjacent magnetrons of the plurality of inner magnetrons.

Abstract: A system and method for cleaning a preclean process chamber in between wafer processing. The internal pressure of the preclean process chamber is reduced to a first pressure and a first gas that consists of oxygen and an inert or noble gas, is introduced into the chamber. Plasma is generated within the preclean process chamber using the first gas at the first pressure. Internal pressure is then reduced to a second pressure, less than the first, and the first gas is continued into the chamber. Plasma is then generated using the first gas at the second pressure. Thereafter, a second gas, consisting of an oxygen-free inert or noble gas, is introduced into the chamber at the second pressure, following which plasma is generated within the chamber using only the second gas.

Abstract: An apparatus for manufacturing a semiconductor device may include a chamber, a chuck provided in the chamber, and a biased power supply physically connected with the chuck. The apparatus may include a target component provided over the chuck and the biased power supply, and a magnetron assembly provided over the target component. The magnetron assembly may include a plurality of outer magnetrons and a plurality of inner magnetrons, and a spacing between each adjacent magnetrons of the plurality of outer magnetrons may be different from a spacing between each adjacent magnetrons of the plurality of inner magnetrons.

Abstract: The disclosure generally describes one or more techniques for authenticating a webhook endpoint with a webhook server. Some techniques include a webhook server sending a seed with a webhook endpoint after the webhook endpoint is registered with the webhook server. In some examples, the webhook server generates the seed to send to the webhook endpoint and stores the seed with a key associated with the webhook endpoint. In such examples, the webhook server does not send data associated with the particular events to the webhook endpoint until the webhook endpoint acknowledges receipt of the seed while the seed is still valid.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.

Abstract: A semiconductor may include an active region, an epitaxial source/drain formed in and extending above the active region, and a first dielectric layer formed over a portion of the active region. The semiconductor may include a first metal gate and a second metal gate formed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer and the second metal gate, and a titanium layer, without an intervening fluorine residual layer, formed on the metal gate and the epitaxial source/drain. The semiconductor may include a first metal layer formed on top of the titanium on the first metal gate, a second metal layer formed on top of the titanium layer on the epitaxial source/drain, and a third dielectric layer formed on the second dielectric layer. The semiconductor may include first and second vias formed in the third dielectric layer.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.

Abstract: A semiconductor may include an active region, an epitaxial source/drain formed in and extending above the active region, and a first dielectric layer formed over a portion of the active region. The semiconductor may include a first metal gate and a second metal gate formed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer and the second metal gate, and a titanium layer, without an intervening fluorine residual layer, formed on the metal gate and the epitaxial source/drain. The semiconductor may include a first metal layer formed on top of the titanium on the first metal gate, a second metal layer formed on top of the titanium layer on the epitaxial source/drain, and a third dielectric layer formed on the second dielectric layer. The semiconductor may include first and second vias formed in the third dielectric layer.

Abstract: A semiconductor arrangement is provided. The semiconductor arrangement includes a dielectric layer defining an opening, an adhesion layer in the opening, and a conductive layer in the opening over the adhesion layer. A material of the conductive layer is a same material as an adhesion material of the adhesion layer.

Abstract: A semiconductor arrangement is provided. The semiconductor arrangement includes a dielectric layer defining an opening, an adhesion layer in the opening, and a conductive layer in the opening over the adhesion layer. A material of the conductive layer is a same material as an adhesion material of the adhesion layer.

Abstract: A system and method for cleaning a preclean process chamber in between wafer processing. The internal pressure of the preclean process chamber is reduced to a first pressure and a first gas that consists of oxygen and an inert or noble gas, is introduced into the chamber. Plasma is generated within the preclean process chamber using the first gas at the first pressure. Internal pressure is then reduced to a second pressure, less than the first, and the first gas is continued into the chamber. Plasma is then generated using the first gas at the second pressure. Thereafter, a second gas, consisting of an oxygen-free inert or noble gas, is introduced into the chamber at the second pressure, following which plasma is generated within the chamber using only the second gas.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.