Abstract: A method for forming an interconnect structure is provided. The method includes the following operations. A contact is formed over a substrate. An interlayer dielectric (ILD) layer is formed over the contact and the substrate. An opening is formed in the ILD layer thereby exposing a portion of the contact. A densified dielectric layer is formed at an exposed surface of the ILD layer by the opening and an oxide layer over the portion of the contact by irradiating a microwave on the exposed surface of the ILD layer.

Abstract: A semiconductor device includes a substrate, a first active structure, a second active structure, a wall and a STI layer. The first active structure is formed on the substrate. The second active structure is formed on the substrate. The wall is formed between the first active structure and the second active structure. The STI layer is formed adjacent to the first active structure and has an upper surface. A distance between a spacer of the first active structure and the upper surface of the STI layer may range between 0 and 50 nanometers.

Abstract: Optical devices and methods of manufacture are presented in which a first mask is utilized for multiple purposes. Some methods include depositing a first mask over a support material, forming a concave surface in the support material through the first mask, and bonding the first mask to a first bonding layer over an optical interposer.

Abstract: An engineered DNA polymerase, with increased property for single molecule sequencing compared to a wild-type DNA polymerase, comprising a combination of mutation sites and functional domains, wherein the combination of mutation sites and functional domains includes thermostable mutation sites, low Kd mutation sites, exonuclease-deficient sites and DNA binding domains.

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

Abstract: A stripping tool includes a fixed handle (10), a fixed clamp plate (20), a movable handle (30), a movable clamp plate (40), a cutting/pulling mechanism (50) and a driving operation mechanism (60). The driving operation mechanism (60) includes a pushing assembly (61), a pressing assembly (62) and an action member (63). One end of the pushing assembly (61) is connected to the moveable handle (30) and another end is moveably connected to the action member (63). The pressing assembly (62) is fixed to the fixed handle (10). One end of the action member (63) is connected to the cutting/pulling mechanism (50) and another end is elastically pressed by the pressing assembly (62). When the movable handle (30) rotates toward the fixed handle (10), the pushing assembly (61) moves the action member (63) and the cutting/pulling mechanism (50) toward the pressing assembly (62) to implement wire stripping.

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

Abstract: A pliers includes a first pliers body (10) and a second pliers body (20). The first pliers body includes a first handle (11) and a first clamp (12). A first pliers knife (13) and a first pliers back (14) are disposed on the first clamp (12). The second pliers body (20) includes a second handle (21) and a second clamp (22). A second pliers knife (23) and a second pliers back (24) are disposed on the second clamp (22). The second clamp (22) is pivotally connected with the first clamp (12) to clamp or cut. The first pliers back (14) or the second pliers back (24) is provided with a chipping blade (50) configured in a concave arc shape for chipping.

Abstract: A pliers includes a first pliers body (10) and a second pliers body (20). The first pliers body includes a first handle (11) and a first clamp (12). A first pliers knife (13) and a first pliers back (14) are disposed on the first clamp (12). The second pliers body (20) includes a second handle (21) and a second clamp (22). A second pliers knife (23) and a second pliers back (24) are disposed on the second clamp (22). The second clamp (22) is pivotally connected with the first clamp (12) to clamp or cut. The first pliers back (14) or the second pliers back (24) is provided with a chipping blade (50) configured in a concave arc shape for chipping.

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

Abstract: A method includes performing Chemical Mechanical Polish (CMP) on a wafer, placing the wafer on a chuck, performing a post-CMP cleaning on the wafer, and determining cleanness of the wafer when the wafer is located on the chuck.

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

Abstract: A crimping tool includes a base, a press handle, a slide module, a link and a fixed fix shaft. The base has two first side walls and to sliding space is defined therebetween. One end of the press handle is pivoted at an end of the base. The slide module is slidably accommodated in the sliding space and has a guiding groove. Two ends of the link are pivoted at the press handle and the slide module separately. The fix shaft is disposed across the two first side walls and inserted in the guiding groove. When the press handle drives the slide module sliding in the sliding space through the link, the guiding groove of the slide module will be guided and restricted by the fix shaft. Therefore, the guiding grooves will not be damaged and get dirt.

Abstract: A defect inspection method and a defect inspection system for a solar cell are proposed, where the method includes the following steps. Output voltages and output currents of the solar cell are measured by a measuring device. A stepwise current-voltage curve (stepwise IV curve) and a fitted current-voltage curve (fitted IV curve) are generated by a processing device according to the output voltages and the output currents, and whether a first error of the fitted IV curve is less than a first error tolerance is determined by the processing device. When the first error is not less than the first error tolerance, whether there exists at least one surge in steps of the stepwise IV curve is determined by the processing device so as to determine whether the solar cell has a defect. Next, a determined result of the processing device is outputted by the output device.

Abstract: A crimping tool includes a base, a press handle, a slide module, a link and a fixed fix shaft. The base has two first side walls and to sliding space is defined therebetween. One end of the press handle is pivoted at an end of the base. The slide module is slidably accommodated in the sliding space and has a guiding groove. Two ends of the link are pivoted at the press handle and the slide module separately. The fix shaft is disposed across the two first side walls and inserted in the guiding groove. When the press handle drives the slide module sliding in the sliding space through the link, the guiding groove of the slide module will be guided and restricted by the fix shaft. Therefore, the guiding grooves will not be damaged and get dirt.

Abstract: A defect inspection method and a defect inspection system for a solar cell are proposed, where the method includes the following steps. Output voltages and output currents of the solar cell are measured by a measuring device. A stepwise current-voltage curve (stepwise IV curve) and a fitted current-voltage curve (fitted IV curve) are generated by a processing device according to the output voltages and the output currents, and whether a first error of the fitted IV curve is less than a first error tolerance is determined by the processing device. When the first error s not less than the first error tolerance, whether there exists at least one surge in steps of the stepwise IV curve is determined by the processing device so as to determine whether the solar cell has a defect. Next, a determined result of the processing device is outputted by the output device.

Abstract: A method includes performing Chemical Mechanical Polish (CMP) on a wafer, placing the wafer on a chuck, performing a post-CMP cleaning on the wafer, and determining cleanness of the wafer when the wafer is located on the chuck.

Abstract: A method includes performing Chemical Mechanical Polish (CMP) on a wafer, placing the wafer on a chuck, performing a post-CMP cleaning on the wafer, and determining cleanness of the wafer when the wafer is located on the chuck.

Abstract: A method of transferring a thin film includes: providing a first element structure, wherein the first element structure includes a first substrate and a functional film layer formed on the first substrate; completely removing the first substrate, wherein steps of the completely removing the first substrate includes: conducting an etching step to erode the first substrate, and conducting a grinding step to planarize the eroded first substrate; and after completely removing the first substrate, attaching the functional film layer on a second substrate to form a second element structure.