Abstract: An optical lens assembly includes, from an object side to an image side, at least four optical lens elements. At least one of the at least four optical lens elements includes an anti-reflective coating. The at least one optical lens element including the anti-reflective coating is made of a plastic material. The anti-reflective coating is arranged on an object-side surface or an image-side surface of the at least one optical lens element including the anti-reflective coating. The anti-reflective coating includes at least one coating layer. One of the at least one coating layer at the outer of the anti-reflective coating is made of ceramics. The anti-reflective coating includes a plurality of holes, and sizes of the plurality of holes adjacent to the outer of the anti-reflective coating are larger than sizes of the plurality of holes adjacent to the inner of the anti-reflective coating.

Abstract: A method of manufacturing a semiconductor device includes at least the following steps. A protrusion is formed in a substrate by an anisotropic etch process, wherein a sidewall of the protrusion is inclined. A recess is formed on the sidewall of the protrusion by an isotropic etch process, wherein during the isotropic etch process, a by-product covers a first portion of the sidewall of the protrusion while exposing a second portion of the sidewall of the protrusion, so that the recess is formed between the first portion and the second portion of the sidewall.

Abstract: A gallium nitride (GaN) device with field plate structure, including a substrate, a gate on the substrate and a passivation layer covering on the gate, a source and a drain on the substrate and the passivation layer, a stop layer on the source, the drain and the passivation layer, and dual-damascene interconnects connecting respectively with the source and the drain, wherein the dual-damascene interconnect is provided with a via portion under the stop layer and a trench portion on the stop layer, and the via portion is connected with the source or the drain, and the trench portion of one of the dual-damascene interconnects extends horizontally toward the drain and overlaps the gate below in vertical direction, thereby functioning as a field plate structure for the GaN device.

Abstract: A semiconductor structure includes a SOI substrate having a device layer and a buried oxide layer contiguous with the device layer; a transistor disposed on the device layer; a dielectric layer surrounding the transistor; an interconnect structure disposed on the dielectric layer and electrically connected to a gate of the transistor; a charge trapping layer contiguous with the buried oxide layer; a capping layer contiguous with the charge trapping layer; and a conductive via penetrating through the capping layer, the charge trapping layer, the buried oxide layer, the device layer, and the dielectric layer. The conductive via is electrically connected to the interconnect structure.

Abstract: An unmanned vehicle processing system includes a controller, a laser source, a galvanometer module and a receiving device. The controller provides a laser trigger signal. The laser source is connected electrically to the controller, receives the laser trigger signal and further emits accordingly a laser beam. The galvanometer module includes a scanning galvanometer for reflecting and converting the laser beam into a processing beam. The receiving device is connected electrically to the controller, receives a processing reflected beam reflected from the object and further emits correspondingly a reflected reception signal to the controller. The controller obtains a processing distance between the unmanned vehicle and the object according to the reflected reception signal and the laser trigger signal, the reflected reception signal has a reflected-signal intensity, and the controller detects a processed state of the object according to the reflected-signal intensity.

Abstract: A semiconductor package includes a RDL interposer having a first surface and a second surface; fanout pads and peripheral pads on the second surface; a first semiconductor die on the first surface and electrically connected to the fanout pads; a molding compound surrounding the first semiconductor die and the first surface of the RDL interposer; through mold vias in the molding compound around the first semiconductor die; peripheral solder bumps within the through mold vias and directly disposed on the peripheral pads; through silicon via pads on the rear surface of the first semiconductor die; a second semiconductor die bonded to the through silicon via pads of the first semiconductor die and the peripheral solder bumps within the through mold vias.

Abstract: A light-emitting diode includes an epitaxial layer, including a first semiconductor layer, a light-emitting layer configured to emit light, and a second semiconductor layer sequentially stacked in that order, and has a first surface and a second surface opposite to each other; a first insulating reflective layer, disposed on the first surface of the epitaxial layer; and a second insulating reflective layer, disposed on the second surface of the epitaxial layer. Reflectivity of the first insulating reflective layer to light with a first incident angle is lower than reflectivity of the second insulating reflective layer to light with a third incident angle, the first incident angle is in a range of 0° to 10°, and the third incident angle is in a range of 0° to 10°. Therefore, a lateral light emission angle and an extreme light emission angle of the light-emitting diode can be improved, which meet market demand.

Abstract: An LED display screen configuration system for improving the gray scale recognition effect of human eyes used in a direct-view LED display screen sets a first current matched with a selected gamma value to output light to define a first brightness range, then uses a brightness X˜100% in the first brightness range to form a first modulation interval and a brightness Y % as a minimum allowable value, and sets the next current to form the next modulation interval, and so on and so forth. In any two adjacent modulation intervals, the maximum brightness outputted from the latter modulation interval is equal to or slightly greater than the brightness X % of the previous modulation interval, so that the respective current outputs of the 1st to the Nth modulation intervals show a power decreasing relationship, so as to set or switch to the most suitable modulation interval for the practical brightness requirements.

Abstract: A self-protection circuitry is configured to receive a first power source. The self-protection circuitry includes a first transistor circuit, a first switch circuit, and a control circuit. The first transistor circuit includes a first input terminal, a first output terminal, and a first control terminal. The first input terminal is configured to receive the first power source. The first output terminal is electrically connected to a ground terminal. The first switch circuit is electrically connected to the first input terminal and the ground terminal. The control circuit is electrically connected to the first switch circuit, and is configured to: before the first power source supplies power to the first transistor circuit, control the first switch circuit to be turned on, and after the first power source continuously supplies power to the first transistor circuit, control the first switch circuit to be turned off.

Abstract: A self-protection circuitry is configured to receive a first power source. The self-protection circuitry includes a first transistor circuit, a first switch circuit, and a control circuit. The first transistor circuit includes a first input terminal, a first output terminal, and a first control terminal. The first output terminal is electrically connected to a ground terminal, and the first input terminal is configured to receive the first power source. The first switch circuit is electrically connected to the first control terminal and the first input terminal. The control circuit is electrically connected to the first switch circuit, and is configured to: before the first power source supplies power to the first transistor circuit, control the first switch circuit to be 10 conducted, and after the first power source continuously supplies power to the first transistor circuit, control the first switch circuit to be cut off.

Abstract: A semiconductor device includes a bit line, a source, a body, a channel, a drain, a word line and a first body contact. The source is on the bit line. The body is on the source. The channel is on the body. The drain is on the channel. The word line surrounds and is spaced apart from the channel. The first body contact is on the body, in which the first body contact and the source are separated by the body.

Abstract: A wafer structure includes a substrate having a pre-bonding structure thereon. The pre-bonding structure includes an outer dielectric layer covering a central region of the substrate and a ring-shaped absorbent layer within a ring-shaped peripheral region of the substrate. The ring-shaped absorbent layer is contiguous with the outer dielectric layer.

Abstract: An imaging lens assembly has an optical axis and includes a plastic lens element set. The plastic lens element set includes two plastic lens elements and at least one anti-reflective layer. The two plastic lens elements, in order from an object side to an image side along the optical axis are a first plastic lens element and a second plastic lens element. The anti-reflective layer has a nanostructure and is disposed on at least one of an image-side surface of the first plastic lens element and an object-side surface of the second plastic lens element.

Abstract: The present invention discloses a method for repairing or preventing retinal damage, which includes: administering a composition comprising a Lactobacillus plantarum PL-02 strain or a metabolite thereof to a subject in need thereof; wherein the PL-02 strain is deposited at the China General Microbiological Culture Collection Center with a deposition number CGMCC 20485.

Abstract: A multi-port power delivery system and a power allocation method thereof are disclosed. The system comprises a first connection port, a second connection port, and a controller which is configured to monitor the average power of each connection port, and decrease the power budget of the first connection port and increase the power budget of the second connection port when the average power of the first connection port falls below a first threshold, and the average power of the second connection port exceeds a second threshold.

Abstract: A server comprising a circuitry, wherein the circuitry is configured to perform: generating a virtual chatbot via a machine learning model; determining an emotion of the virtual chatbot; feeding information of the emotion into the machine learning model; and setting the virtual chatbot in a live streaming room. According to the present disclosure, the communication between the viewers and AI V-Liver may be improved. Moreover, the quality of the live streaming platform with AI V-Livers may also be improved. Therefore, the user experience may also be improved.

Abstract: A semiconductor device includes a device layer, an interlayer dielectric layer disposed above the device layer, a first interconnection structure, a second interconnection structure, and a first dielectric layer. The interlayer dielectric layer includes a first portion and a second portion disposed above a first device region and a second device region, respectively. A top surface of the first portion is lower than a top surface of the second portion in a vertical direction. The first interconnection structure includes first conductive lines partly located in the first portion. The second interconnection structure includes second conductive lines located in the second portion. The first dielectric layer is disposed on the first portion, a part of the first dielectric layer is sandwiched between two adjacent first conductive lines, and a bottom surface of the first dielectric layer is lower than the top surface of the second portion in the vertical direction.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The trench includes a lower gate electrode, an upper gate electrode over the lower gate electrode and a first dielectric layer partially disposed between the lower gate electrode and the upper gate electrode.

Abstract: An optical imaging lens assembly includes nine lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element, an eighth lens element and a ninth lens element. The first lens element has negative refractive power. The second lens element with negative refractive power has an object-side surface being convex and an image-side surface being concave in a paraxial region thereof. The fourth lens element has an image-side surface being convex in a paraxial region thereof. The fifth lens element has positive refractive power. The sixth lens element has an image-side surface being concave in a paraxial region thereof. The eighth lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof.

Abstract: A semiconductor structure including a first die, a second die stacked on the first die, a smoothing layer disposed on the first die and a filling material layer disposed on the smoothing layer. The second die has a dielectric portion and a semiconductor material portion disposed on the dielectric portion. The smoothing layer includes a first dielectric layer and a second dielectric layer, and the second dielectric layer is disposed on the first dielectric layer. The dielectric portion is surrounded by the smoothing layer, and the semiconductor material portion is surrounded by the filling material layer. A material of the first dielectric layer is different from a material of the second dielectric layer and a material of the filling material layer.